SE457300B - Fotovoltiskt don - Google Patents

Fotovoltiskt don

Info

Publication number
SE457300B
SE457300B SE8301366A SE8301366A SE457300B SE 457300 B SE457300 B SE 457300B SE 8301366 A SE8301366 A SE 8301366A SE 8301366 A SE8301366 A SE 8301366A SE 457300 B SE457300 B SE 457300B
Authority
SE
Sweden
Prior art keywords
layer
oxide
amorphous silicon
highly reflective
transparent
Prior art date
Application number
SE8301366A
Other languages
English (en)
Swedish (sv)
Other versions
SE8301366D0 (sv
SE8301366L (sv
Inventor
V Cannella
D D Allred
R Mohr
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of SE8301366D0 publication Critical patent/SE8301366D0/xx
Publication of SE8301366L publication Critical patent/SE8301366L/xx
Publication of SE457300B publication Critical patent/SE457300B/sv

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17Photovoltaic cells having only PIN junction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/42Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48Back surface reflectors [BSR]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
SE8301366A 1982-03-18 1983-03-14 Fotovoltiskt don SE457300B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35937182A 1982-03-18 1982-03-18

Publications (3)

Publication Number Publication Date
SE8301366D0 SE8301366D0 (sv) 1983-03-14
SE8301366L SE8301366L (sv) 1983-09-19
SE457300B true SE457300B (sv) 1988-12-12

Family

ID=23413524

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8301366A SE457300B (sv) 1982-03-18 1983-03-14 Fotovoltiskt don

Country Status (15)

Country Link
JP (1) JPS58170075A (OSRAM)
AU (1) AU540909B2 (OSRAM)
BR (1) BR8301160A (OSRAM)
CA (1) CA1245330A (OSRAM)
DE (1) DE3308598A1 (OSRAM)
FR (1) FR2523768B1 (OSRAM)
GB (1) GB2116775B (OSRAM)
IE (1) IE54573B1 (OSRAM)
IL (1) IL67926A (OSRAM)
IN (1) IN161241B (OSRAM)
IT (1) IT1160506B (OSRAM)
MX (1) MX153416A (OSRAM)
NL (1) NL8300925A (OSRAM)
SE (1) SE457300B (OSRAM)
ZA (1) ZA831342B (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171870A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置
JPS6034076A (ja) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd 非晶質シリコン太陽電池
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector
DE3502218A1 (de) * 1985-01-24 1986-07-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Fuer photovoltaische solargeneratoren verwendbare solarzelle
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
JPS62259480A (ja) * 1986-05-01 1987-11-11 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPH01304786A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 光発電素子
JPH0273672A (ja) * 1988-09-08 1990-03-13 Fuji Electric Corp Res & Dev Ltd 薄膜光電変換素子
US5324365A (en) * 1991-09-24 1994-06-28 Canon Kabushiki Kaisha Solar cell
JP2994812B2 (ja) * 1991-09-26 1999-12-27 キヤノン株式会社 太陽電池
JPH0677510A (ja) * 1992-08-24 1994-03-18 Canon Inc 光起電力素子
DE69535967D1 (de) * 1994-10-06 2009-07-30 Kanegafuchi Chemical Ind Dünnschicht-solarzelle
US5626687A (en) * 1995-03-29 1997-05-06 The United States Of America As Represented By The United States Department Of Energy Thermophotovoltaic in-situ mirror cell
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20120318352A1 (en) * 2011-06-14 2012-12-20 General Electric Company Photovoltaic device with reflection enhancing layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US3988167A (en) * 1975-03-07 1976-10-26 Rca Corporation Solar cell device having improved efficiency
IT1092849B (it) * 1977-03-28 1985-07-12 Rca Corp Dispositivo fotovoltaico presentante una elevata efficienza di assorbimento
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie

Also Published As

Publication number Publication date
GB2116775A (en) 1983-09-28
BR8301160A (pt) 1983-11-22
SE8301366D0 (sv) 1983-03-14
IT1160506B (it) 1987-03-11
MX153416A (es) 1986-10-07
IN161241B (OSRAM) 1987-10-31
FR2523768A1 (fr) 1983-09-23
IT8319923A0 (it) 1983-03-04
ZA831342B (en) 1983-11-30
GB8306327D0 (en) 1983-04-13
DE3308598A1 (de) 1983-09-22
SE8301366L (sv) 1983-09-19
NL8300925A (nl) 1983-10-17
GB2116775B (en) 1986-07-30
AU1241583A (en) 1984-09-20
CA1245330A (en) 1988-11-22
JPS58170075A (ja) 1983-10-06
IE830502L (en) 1983-09-18
FR2523768B1 (fr) 1991-03-29
IE54573B1 (en) 1989-11-22
AU540909B2 (en) 1984-12-06
IL67926A (en) 1986-04-29
IL67926A0 (en) 1983-06-15

Similar Documents

Publication Publication Date Title
US4379943A (en) Current enhanced photovoltaic device
EP0122778B1 (en) Narrow band gap photovoltaic devices with enhanced open circuit voltage
KR860002031B1 (ko) 광응답 비정질 합금을 최적화하는 방법 및 디바이스
GB2124826A (en) Amorphous semiconductor materials
SE454225B (sv) Fotovoltiskt don samt anvendning av donet
US4623601A (en) Photoconductive device containing zinc oxide transparent conductive layer
SE457300B (sv) Fotovoltiskt don
EP0233613B1 (en) Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
KR890004497B1 (ko) 다중 셀의 감광성 비정질 합금 및 소자
SE455554B (sv) Fotospenningsdon
US4710786A (en) Wide band gap semiconductor alloy material
KR890000479B1 (ko) 광응답 비정질 합금 제조방법 및 그 합금과 그로부터 만든 디바이스
US4605941A (en) Amorphous semiconductors equivalent to crystalline semiconductors
KR840002468B1 (ko) 실리콘 함유층의 제조 공정
US4839312A (en) Fluorinated precursors from which to fabricate amorphous semiconductor material
US4703336A (en) Photodetection and current control devices
CA1192816A (en) Method for making photoresponsive amorphous germanium alloys and devices
JPH0548127A (ja) 非晶質シリコン太陽電池及びその製造方法
JPH04192373A (ja) 光起電力素子
JP2007150230A (ja) 多接合型シリコン系薄膜光電変換装置

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 8301366-4

Effective date: 19931008

Format of ref document f/p: F