NL8300925A - Fotogalvanische inrichting met verbeterd reflectiesysteem. - Google Patents
Fotogalvanische inrichting met verbeterd reflectiesysteem. Download PDFInfo
- Publication number
- NL8300925A NL8300925A NL8300925A NL8300925A NL8300925A NL 8300925 A NL8300925 A NL 8300925A NL 8300925 A NL8300925 A NL 8300925A NL 8300925 A NL8300925 A NL 8300925A NL 8300925 A NL8300925 A NL 8300925A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- transparent
- amorphous silicon
- oxide
- doped
- Prior art date
Links
- 239000000956 alloy Substances 0.000 claims description 80
- 229910045601 alloy Inorganic materials 0.000 claims description 79
- 239000000463 material Substances 0.000 claims description 78
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004020 conductor Substances 0.000 claims description 30
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- 229910052731 fluorine Inorganic materials 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 7
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 7
- 229940112669 cuprous oxide Drugs 0.000 claims description 7
- 229940071182 stannate Drugs 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000012780 transparent material Substances 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- -1 chalcogenide cadmium sulfide Chemical class 0.000 claims description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims description 3
- YRNLXSUVDAMZLU-UHFFFAOYSA-N germanium;oxotin Chemical compound [Ge].[Sn]=O YRNLXSUVDAMZLU-UHFFFAOYSA-N 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 3
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 3
- 150000004770 chalcogenides Chemical class 0.000 claims description 2
- 229960001296 zinc oxide Drugs 0.000 claims 3
- 229910000676 Si alloy Inorganic materials 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 229910000882 Ca alloy Inorganic materials 0.000 claims 1
- 241001676573 Minium Species 0.000 claims 1
- 229920002253 Tannate Polymers 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 125000005402 stannate group Chemical group 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910000077 silane Inorganic materials 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000002178 crystalline material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001188 F alloy Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- VDRSDNINOSAWIV-UHFFFAOYSA-N [F].[Si] Chemical compound [F].[Si] VDRSDNINOSAWIV-UHFFFAOYSA-N 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- CEZCCHQBSQPRMU-UHFFFAOYSA-L chembl174821 Chemical compound [Na+].[Na+].COC1=CC(S([O-])(=O)=O)=C(C)C=C1N=NC1=C(O)C=CC2=CC(S([O-])(=O)=O)=CC=C12 CEZCCHQBSQPRMU-UHFFFAOYSA-L 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000035935 pregnancy Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
- H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35937182A | 1982-03-18 | 1982-03-18 | |
| US35937182 | 1982-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8300925A true NL8300925A (nl) | 1983-10-17 |
Family
ID=23413524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8300925A NL8300925A (nl) | 1982-03-18 | 1983-03-14 | Fotogalvanische inrichting met verbeterd reflectiesysteem. |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS58170075A (OSRAM) |
| AU (1) | AU540909B2 (OSRAM) |
| BR (1) | BR8301160A (OSRAM) |
| CA (1) | CA1245330A (OSRAM) |
| DE (1) | DE3308598A1 (OSRAM) |
| FR (1) | FR2523768B1 (OSRAM) |
| GB (1) | GB2116775B (OSRAM) |
| IE (1) | IE54573B1 (OSRAM) |
| IL (1) | IL67926A (OSRAM) |
| IN (1) | IN161241B (OSRAM) |
| IT (1) | IT1160506B (OSRAM) |
| MX (1) | MX153416A (OSRAM) |
| NL (1) | NL8300925A (OSRAM) |
| SE (1) | SE457300B (OSRAM) |
| ZA (1) | ZA831342B (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58171870A (ja) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPS58171869A (ja) * | 1982-04-02 | 1983-10-08 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPS6034076A (ja) * | 1983-08-05 | 1985-02-21 | Taiyo Yuden Co Ltd | 非晶質シリコン太陽電池 |
| EP0167231A1 (en) * | 1984-05-02 | 1986-01-08 | Energy Conversion Devices, Inc. | Photoresponsive device incorporating improved back reflector |
| DE3502218A1 (de) * | 1985-01-24 | 1986-07-24 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Fuer photovoltaische solargeneratoren verwendbare solarzelle |
| US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
| JPH0656883B2 (ja) * | 1986-03-03 | 1994-07-27 | 鐘淵化学工業株式会社 | 半導体装置 |
| JPS62259480A (ja) * | 1986-05-01 | 1987-11-11 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| JPH01304786A (ja) * | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 光発電素子 |
| JPH0273672A (ja) * | 1988-09-08 | 1990-03-13 | Fuji Electric Corp Res & Dev Ltd | 薄膜光電変換素子 |
| US5324365A (en) * | 1991-09-24 | 1994-06-28 | Canon Kabushiki Kaisha | Solar cell |
| JP2994812B2 (ja) * | 1991-09-26 | 1999-12-27 | キヤノン株式会社 | 太陽電池 |
| JPH0677510A (ja) * | 1992-08-24 | 1994-03-18 | Canon Inc | 光起電力素子 |
| DE69535967D1 (de) * | 1994-10-06 | 2009-07-30 | Kanegafuchi Chemical Ind | Dünnschicht-solarzelle |
| US5626687A (en) * | 1995-03-29 | 1997-05-06 | The United States Of America As Represented By The United States Department Of Energy | Thermophotovoltaic in-situ mirror cell |
| US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
| US20120318352A1 (en) * | 2011-06-14 | 2012-12-20 | General Electric Company | Photovoltaic device with reflection enhancing layer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3907595A (en) * | 1971-12-03 | 1975-09-23 | Communications Satellite Corp | Solar cells with incorporate metal leyer |
| US3973994A (en) * | 1974-03-11 | 1976-08-10 | Rca Corporation | Solar cell with grooved surface |
| US3988167A (en) * | 1975-03-07 | 1976-10-26 | Rca Corporation | Solar cell device having improved efficiency |
| IT1092849B (it) * | 1977-03-28 | 1985-07-12 | Rca Corp | Dispositivo fotovoltaico presentante una elevata efficienza di assorbimento |
| US4166919A (en) * | 1978-09-25 | 1979-09-04 | Rca Corporation | Amorphous silicon solar cell allowing infrared transmission |
| JPS55125680A (en) | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
| DE2938260A1 (de) * | 1979-09-21 | 1981-03-26 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Halbleiterbauelement fuer die umsetzung von licht in elektrische energie |
-
1983
- 1983-02-16 IL IL67926A patent/IL67926A/xx unknown
- 1983-02-22 IN IN211/CAL/83A patent/IN161241B/en unknown
- 1983-02-28 ZA ZA831342A patent/ZA831342B/xx unknown
- 1983-03-04 IT IT19923/83A patent/IT1160506B/it active
- 1983-03-07 CA CA000423034A patent/CA1245330A/en not_active Expired
- 1983-03-08 IE IE502/83A patent/IE54573B1/en not_active IP Right Cessation
- 1983-03-08 GB GB08306327A patent/GB2116775B/en not_active Expired
- 1983-03-09 BR BR8301160A patent/BR8301160A/pt unknown
- 1983-03-10 DE DE19833308598 patent/DE3308598A1/de not_active Ceased
- 1983-03-11 FR FR838304009A patent/FR2523768B1/fr not_active Expired - Fee Related
- 1983-03-11 AU AU12415/83A patent/AU540909B2/en not_active Ceased
- 1983-03-14 NL NL8300925A patent/NL8300925A/nl not_active Application Discontinuation
- 1983-03-14 SE SE8301366A patent/SE457300B/sv not_active IP Right Cessation
- 1983-03-18 JP JP58045837A patent/JPS58170075A/ja active Pending
- 1983-03-18 MX MX196625A patent/MX153416A/es unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2116775A (en) | 1983-09-28 |
| BR8301160A (pt) | 1983-11-22 |
| SE8301366D0 (sv) | 1983-03-14 |
| IT1160506B (it) | 1987-03-11 |
| MX153416A (es) | 1986-10-07 |
| IN161241B (OSRAM) | 1987-10-31 |
| FR2523768A1 (fr) | 1983-09-23 |
| IT8319923A0 (it) | 1983-03-04 |
| ZA831342B (en) | 1983-11-30 |
| GB8306327D0 (en) | 1983-04-13 |
| SE457300B (sv) | 1988-12-12 |
| DE3308598A1 (de) | 1983-09-22 |
| SE8301366L (sv) | 1983-09-19 |
| GB2116775B (en) | 1986-07-30 |
| AU1241583A (en) | 1984-09-20 |
| CA1245330A (en) | 1988-11-22 |
| JPS58170075A (ja) | 1983-10-06 |
| IE830502L (en) | 1983-09-18 |
| FR2523768B1 (fr) | 1991-03-29 |
| IE54573B1 (en) | 1989-11-22 |
| AU540909B2 (en) | 1984-12-06 |
| IL67926A (en) | 1986-04-29 |
| IL67926A0 (en) | 1983-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |