SE456464B - Halvledarelement med minst en emitterbasstruktur vars emitterverksamhet er liten vid laga stromtetheter och kraftigt okar i ett onskat hogre stromtethetsomrade - Google Patents
Halvledarelement med minst en emitterbasstruktur vars emitterverksamhet er liten vid laga stromtetheter och kraftigt okar i ett onskat hogre stromtethetsomradeInfo
- Publication number
- SE456464B SE456464B SE8006717A SE8006717A SE456464B SE 456464 B SE456464 B SE 456464B SE 8006717 A SE8006717 A SE 8006717A SE 8006717 A SE8006717 A SE 8006717A SE 456464 B SE456464 B SE 456464B
- Authority
- SE
- Sweden
- Prior art keywords
- zone
- emitter
- current
- base
- shorting
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 230000000694 effects Effects 0.000 claims description 27
- 238000002347 injection Methods 0.000 claims description 21
- 239000007924 injection Substances 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 description 24
- 230000003321 amplification Effects 0.000 description 23
- 238000003199 nucleic acid amplification method Methods 0.000 description 23
- 230000006798 recombination Effects 0.000 description 16
- 238000005215 recombination Methods 0.000 description 14
- 230000007423 decrease Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000011084 recovery Methods 0.000 description 9
- 230000007704 transition Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000013642 negative control Substances 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
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- 238000010168 coupling process Methods 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
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- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2941021A DE2941021C2 (de) | 1979-10-10 | 1979-10-10 | Halbleiterbauelement mit mindestens einer Emitter-Basis-Struktur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8006717L SE8006717L (sv) | 1981-04-11 |
| SE456464B true SE456464B (sv) | 1988-10-03 |
Family
ID=6083126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8006717A SE456464B (sv) | 1979-10-10 | 1980-09-25 | Halvledarelement med minst en emitterbasstruktur vars emitterverksamhet er liten vid laga stromtetheter och kraftigt okar i ett onskat hogre stromtethetsomrade |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5698864A (https=) |
| DE (1) | DE2941021C2 (https=) |
| SE (1) | SE456464B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3339393C2 (de) * | 1983-10-29 | 1986-12-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung einer unterhalb einer äußeren hochdotierten Zone liegenden s-n-Zonenfolge einer Halbleiterstruktur aus Silicium |
| JPS60187058A (ja) * | 1984-03-07 | 1985-09-24 | Hitachi Ltd | 半導体装置 |
| DE3424222A1 (de) * | 1984-06-30 | 1986-01-09 | Brown, Boveri & Cie Ag, 6800 Mannheim | Abschaltbarer thyristor |
| JPS6251259A (ja) * | 1985-08-30 | 1987-03-05 | Fuji Electric Co Ltd | Ｇｔｏサイリスタ |
| EP0285923B1 (de) * | 1987-04-07 | 1993-10-06 | BBC Brown Boveri AG | Gate-Ausschaltthyristor und Verfahren zu dessen Herstellung |
| DE19740906C1 (de) * | 1997-09-17 | 1999-03-18 | Siemens Ag | Vertikales Halbleiterbauelement mit einstellbarer Emittereffizienz |
| DE10048165B4 (de) * | 2000-09-28 | 2008-10-16 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit einer beabstandet zu einer Emitterzone angeordneten Stoppzone |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH543178A (de) * | 1972-03-27 | 1973-10-15 | Bbc Brown Boveri & Cie | Kontinuierlich steuerbares Leistungshalbleiterbauelement |
| DE2461207C3 (de) * | 1974-12-23 | 1978-03-02 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor |
| JPS5912025B2 (ja) * | 1976-11-26 | 1984-03-19 | 三菱電機株式会社 | サイリスタ |
-
1979
- 1979-10-10 DE DE2941021A patent/DE2941021C2/de not_active Expired
-
1980
- 1980-09-25 SE SE8006717A patent/SE456464B/sv not_active IP Right Cessation
- 1980-10-09 JP JP14191980A patent/JPS5698864A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| SE8006717L (sv) | 1981-04-11 |
| JPS5698864A (en) | 1981-08-08 |
| JPH0434312B2 (https=) | 1992-06-05 |
| DE2941021A1 (de) | 1981-04-23 |
| DE2941021C2 (de) | 1985-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
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