SE443476B - Halvledaranordning med tva antiparallella dioder utforda i en halvledarkropp och forfarande for framstellning av denna - Google Patents
Halvledaranordning med tva antiparallella dioder utforda i en halvledarkropp och forfarande for framstellning av dennaInfo
- Publication number
- SE443476B SE443476B SE8008879A SE8008879A SE443476B SE 443476 B SE443476 B SE 443476B SE 8008879 A SE8008879 A SE 8008879A SE 8008879 A SE8008879 A SE 8008879A SE 443476 B SE443476 B SE 443476B
- Authority
- SE
- Sweden
- Prior art keywords
- depressions
- semiconductor
- contact metal
- zone
- base zone
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005275 alloying Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 239000007858 starting material Substances 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WSNMPAVSZJSIMT-UHFFFAOYSA-N COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 Chemical compound COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 WSNMPAVSZJSIMT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2855972A DE2855972C2 (de) | 1978-12-23 | 1978-12-23 | Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8008879L SE8008879L (sv) | 1980-12-17 |
| SE443476B true SE443476B (sv) | 1986-02-24 |
Family
ID=6058262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8008879A SE443476B (sv) | 1978-12-23 | 1980-12-17 | Halvledaranordning med tva antiparallella dioder utforda i en halvledarkropp och forfarande for framstellning av denna |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4525924A (fr) |
| EP (1) | EP0020666A1 (fr) |
| JP (1) | JPS55501161A (fr) |
| DE (1) | DE2855972C2 (fr) |
| GB (1) | GB2064869B (fr) |
| IT (1) | IT1126607B (fr) |
| SE (1) | SE443476B (fr) |
| WO (1) | WO1980001334A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3435306A1 (de) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
| KR940016546A (ko) * | 1992-12-23 | 1994-07-23 | 프레데릭 얀 스미트 | 반도체 장치 및 제조방법 |
| GB2285882B (en) * | 1994-01-14 | 1997-12-17 | Westinghouse Brake & Signal | Semiconductor switching devices |
| US6033489A (en) * | 1998-05-29 | 2000-03-07 | Fairchild Semiconductor Corp. | Semiconductor substrate and method of making same |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2748041A (en) * | 1952-08-30 | 1956-05-29 | Rca Corp | Semiconductor devices and their manufacture |
| US3039028A (en) * | 1955-09-26 | 1962-06-12 | Hoffman Electronics Corp | Double based diode |
| US2985805A (en) * | 1958-03-05 | 1961-05-23 | Rca Corp | Semiconductor devices |
| US3005937A (en) * | 1958-08-21 | 1961-10-24 | Rca Corp | Semiconductor signal translating devices |
| NL270369A (fr) * | 1961-01-16 | |||
| US3519900A (en) * | 1967-11-13 | 1970-07-07 | Motorola Inc | Temperature compensated reference diodes and methods for making same |
| DE1916555A1 (de) * | 1969-04-01 | 1971-03-04 | Semikron Gleichrichterbau | Halbleiter-Gleichrichter-Anordnung und Verfahren zu ihrer Herstellung |
| US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
| US3699402A (en) * | 1970-07-27 | 1972-10-17 | Gen Electric | Hybrid circuit power module |
| FR2126904B1 (fr) * | 1970-12-07 | 1974-04-26 | Silec Semi Conducteurs | |
| JPS567304B2 (fr) * | 1972-08-28 | 1981-02-17 | ||
| US3972113A (en) * | 1973-05-14 | 1976-08-03 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
| DE2610942C2 (de) * | 1976-03-16 | 1983-04-28 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten |
| US4219835A (en) * | 1978-02-17 | 1980-08-26 | Siliconix, Inc. | VMOS Mesa structure and manufacturing process |
-
1978
- 1978-12-23 DE DE2855972A patent/DE2855972C2/de not_active Expired
-
1979
- 1979-12-11 JP JP50005679A patent/JPS55501161A/ja active Pending
- 1979-12-11 US US06/503,078 patent/US4525924A/en not_active Expired - Fee Related
- 1979-12-11 WO PCT/DE1979/000145 patent/WO1980001334A1/fr not_active Application Discontinuation
- 1979-12-11 GB GB8101369A patent/GB2064869B/en not_active Expired
- 1979-12-19 IT IT28210/79A patent/IT1126607B/it active
-
1980
- 1980-07-01 EP EP80900001A patent/EP0020666A1/fr not_active Withdrawn
- 1980-12-17 SE SE8008879A patent/SE443476B/sv not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1980001334A1 (fr) | 1980-06-26 |
| US4525924A (en) | 1985-07-02 |
| GB2064869B (en) | 1983-05-18 |
| GB2064869A (en) | 1981-06-17 |
| IT7928210A0 (it) | 1979-12-19 |
| EP0020666A1 (fr) | 1981-01-07 |
| DE2855972A1 (de) | 1980-06-26 |
| SE8008879L (sv) | 1980-12-17 |
| DE2855972C2 (de) | 1984-09-27 |
| IT1126607B (it) | 1986-05-21 |
| JPS55501161A (fr) | 1980-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 8008879-2 Effective date: 19890301 Format of ref document f/p: F |