FR2335953A1 - Nouvelles diodes " mesa " et leur procede de fabrication - Google Patents

Nouvelles diodes " mesa " et leur procede de fabrication

Info

Publication number
FR2335953A1
FR2335953A1 FR7539181A FR7539181A FR2335953A1 FR 2335953 A1 FR2335953 A1 FR 2335953A1 FR 7539181 A FR7539181 A FR 7539181A FR 7539181 A FR7539181 A FR 7539181A FR 2335953 A1 FR2335953 A1 FR 2335953A1
Authority
FR
France
Prior art keywords
mesa
mfr
thermocompression
surface erosion
avoid deterioration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539181A
Other languages
English (en)
Other versions
FR2335953B1 (fr
Inventor
Raymond Henry
Alain Chapard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7539181A priority Critical patent/FR2335953A1/fr
Publication of FR2335953A1 publication Critical patent/FR2335953A1/fr
Application granted granted Critical
Publication of FR2335953B1 publication Critical patent/FR2335953B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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    • H01L24/11—Manufacturing methods
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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FR7539181A 1975-12-19 1975-12-19 Nouvelles diodes " mesa " et leur procede de fabrication Granted FR2335953A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7539181A FR2335953A1 (fr) 1975-12-19 1975-12-19 Nouvelles diodes " mesa " et leur procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7539181A FR2335953A1 (fr) 1975-12-19 1975-12-19 Nouvelles diodes " mesa " et leur procede de fabrication

Publications (2)

Publication Number Publication Date
FR2335953A1 true FR2335953A1 (fr) 1977-07-15
FR2335953B1 FR2335953B1 (fr) 1978-06-23

Family

ID=9163983

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539181A Granted FR2335953A1 (fr) 1975-12-19 1975-12-19 Nouvelles diodes " mesa " et leur procede de fabrication

Country Status (1)

Country Link
FR (1) FR2335953A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2907949A1 (de) * 1979-03-01 1980-09-11 Siemens Ag Halbleiter-millimeterwellen-oszillator-diode
US4315275A (en) * 1978-06-29 1982-02-09 Thomson-Csf Acoustic storage device intended in particular for the correlation of two high-frequency signals
EP0997936A1 (fr) * 1998-10-30 2000-05-03 Alstom Holdings "Procédé de fabrication d'une électrode de commande de grille pour transistor IGBT".
EP0997940A1 (fr) * 1998-10-30 2000-05-03 Alstom Holdings Procédé de raccordement électrique de puces de transistor IGBT montées sur une plaquette de circuits intégrés

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315275A (en) * 1978-06-29 1982-02-09 Thomson-Csf Acoustic storage device intended in particular for the correlation of two high-frequency signals
DE2907949A1 (de) * 1979-03-01 1980-09-11 Siemens Ag Halbleiter-millimeterwellen-oszillator-diode
EP0997936A1 (fr) * 1998-10-30 2000-05-03 Alstom Holdings "Procédé de fabrication d'une électrode de commande de grille pour transistor IGBT".
EP0997940A1 (fr) * 1998-10-30 2000-05-03 Alstom Holdings Procédé de raccordement électrique de puces de transistor IGBT montées sur une plaquette de circuits intégrés
FR2785448A1 (fr) * 1998-10-30 2000-05-05 Alstom Technology Procede de fabrication d'une electrode de commande de grille pour transistor igbt
FR2785447A1 (fr) * 1998-10-30 2000-05-05 Alstom Technology Procede de raccordement electrique de puces de transistor igbt montees sur une plaquette de circuits integres
US6274451B1 (en) 1998-10-30 2001-08-14 Alstom Holdings Method of fabricating a gate-control electrode for an IGBT transistor
US6297079B1 (en) 1998-10-30 2001-10-02 Alstom Holdings Method of electrically connecting IGBT transistor chips mounted on an integrated-circuit wafer

Also Published As

Publication number Publication date
FR2335953B1 (fr) 1978-06-23

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