IT1126607B - Disposizione di semi-conduttori - Google Patents

Disposizione di semi-conduttori

Info

Publication number
IT1126607B
IT1126607B IT28210/79A IT2821079A IT1126607B IT 1126607 B IT1126607 B IT 1126607B IT 28210/79 A IT28210/79 A IT 28210/79A IT 2821079 A IT2821079 A IT 2821079A IT 1126607 B IT1126607 B IT 1126607B
Authority
IT
Italy
Prior art keywords
conductors
semi
arrangement
Prior art date
Application number
IT28210/79A
Other languages
English (en)
Other versions
IT7928210A0 (it
Inventor
Horst Schafer
Original Assignee
Semikron Gleichrichterbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Gleichrichterbau filed Critical Semikron Gleichrichterbau
Publication of IT7928210A0 publication Critical patent/IT7928210A0/it
Application granted granted Critical
Publication of IT1126607B publication Critical patent/IT1126607B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
IT28210/79A 1978-12-23 1979-12-19 Disposizione di semi-conduttori IT1126607B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2855972A DE2855972C2 (de) 1978-12-23 1978-12-23 Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung

Publications (2)

Publication Number Publication Date
IT7928210A0 IT7928210A0 (it) 1979-12-19
IT1126607B true IT1126607B (it) 1986-05-21

Family

ID=6058262

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28210/79A IT1126607B (it) 1978-12-23 1979-12-19 Disposizione di semi-conduttori

Country Status (8)

Country Link
US (1) US4525924A (it)
EP (1) EP0020666A1 (it)
JP (1) JPS55501161A (it)
DE (1) DE2855972C2 (it)
GB (1) GB2064869B (it)
IT (1) IT1126607B (it)
SE (1) SE443476B (it)
WO (1) WO1980001334A1 (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
KR940016546A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
GB2285882B (en) * 1994-01-14 1997-12-17 Westinghouse Brake & Signal Semiconductor switching devices
US6033489A (en) * 1998-05-29 2000-03-07 Fairchild Semiconductor Corp. Semiconductor substrate and method of making same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2748041A (en) * 1952-08-30 1956-05-29 Rca Corp Semiconductor devices and their manufacture
US3039028A (en) * 1955-09-26 1962-06-12 Hoffman Electronics Corp Double based diode
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
NL125803C (it) * 1961-01-16
US3519900A (en) * 1967-11-13 1970-07-07 Motorola Inc Temperature compensated reference diodes and methods for making same
DE1916555A1 (de) * 1969-04-01 1971-03-04 Semikron Gleichrichterbau Halbleiter-Gleichrichter-Anordnung und Verfahren zu ihrer Herstellung
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US3706129A (en) * 1970-07-27 1972-12-19 Gen Electric Integrated semiconductor rectifiers and processes for their fabrication
FR2126904B1 (it) * 1970-12-07 1974-04-26 Silec Semi Conducteurs
JPS567304B2 (it) * 1972-08-28 1981-02-17
US3972113A (en) * 1973-05-14 1976-08-03 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices
DE2610942C2 (de) * 1976-03-16 1983-04-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process

Also Published As

Publication number Publication date
SE443476B (sv) 1986-02-24
DE2855972A1 (de) 1980-06-26
SE8008879L (sv) 1980-12-17
GB2064869B (en) 1983-05-18
EP0020666A1 (de) 1981-01-07
JPS55501161A (it) 1980-12-18
DE2855972C2 (de) 1984-09-27
GB2064869A (en) 1981-06-17
WO1980001334A1 (fr) 1980-06-26
US4525924A (en) 1985-07-02
IT7928210A0 (it) 1979-12-19

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