IT1126607B - Disposizione di semi-conduttori - Google Patents
Disposizione di semi-conduttoriInfo
- Publication number
- IT1126607B IT1126607B IT28210/79A IT2821079A IT1126607B IT 1126607 B IT1126607 B IT 1126607B IT 28210/79 A IT28210/79 A IT 28210/79A IT 2821079 A IT2821079 A IT 2821079A IT 1126607 B IT1126607 B IT 1126607B
- Authority
- IT
- Italy
- Prior art keywords
- conductors
- semi
- arrangement
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2855972A DE2855972C2 (de) | 1978-12-23 | 1978-12-23 | Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7928210A0 IT7928210A0 (it) | 1979-12-19 |
| IT1126607B true IT1126607B (it) | 1986-05-21 |
Family
ID=6058262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT28210/79A IT1126607B (it) | 1978-12-23 | 1979-12-19 | Disposizione di semi-conduttori |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4525924A (it) |
| EP (1) | EP0020666A1 (it) |
| JP (1) | JPS55501161A (it) |
| DE (1) | DE2855972C2 (it) |
| GB (1) | GB2064869B (it) |
| IT (1) | IT1126607B (it) |
| SE (1) | SE443476B (it) |
| WO (1) | WO1980001334A1 (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3435306A1 (de) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
| KR940016546A (ko) * | 1992-12-23 | 1994-07-23 | 프레데릭 얀 스미트 | 반도체 장치 및 제조방법 |
| GB2285882B (en) * | 1994-01-14 | 1997-12-17 | Westinghouse Brake & Signal | Semiconductor switching devices |
| US6033489A (en) * | 1998-05-29 | 2000-03-07 | Fairchild Semiconductor Corp. | Semiconductor substrate and method of making same |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2748041A (en) * | 1952-08-30 | 1956-05-29 | Rca Corp | Semiconductor devices and their manufacture |
| US3039028A (en) * | 1955-09-26 | 1962-06-12 | Hoffman Electronics Corp | Double based diode |
| US2985805A (en) * | 1958-03-05 | 1961-05-23 | Rca Corp | Semiconductor devices |
| US3005937A (en) * | 1958-08-21 | 1961-10-24 | Rca Corp | Semiconductor signal translating devices |
| NL125803C (it) * | 1961-01-16 | |||
| US3519900A (en) * | 1967-11-13 | 1970-07-07 | Motorola Inc | Temperature compensated reference diodes and methods for making same |
| DE1916555A1 (de) * | 1969-04-01 | 1971-03-04 | Semikron Gleichrichterbau | Halbleiter-Gleichrichter-Anordnung und Verfahren zu ihrer Herstellung |
| US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
| US3706129A (en) * | 1970-07-27 | 1972-12-19 | Gen Electric | Integrated semiconductor rectifiers and processes for their fabrication |
| FR2126904B1 (it) * | 1970-12-07 | 1974-04-26 | Silec Semi Conducteurs | |
| JPS567304B2 (it) * | 1972-08-28 | 1981-02-17 | ||
| US3972113A (en) * | 1973-05-14 | 1976-08-03 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
| DE2610942C2 (de) * | 1976-03-16 | 1983-04-28 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper monolithisch integrierten Halbleiterelementeinheiten |
| US4219835A (en) * | 1978-02-17 | 1980-08-26 | Siliconix, Inc. | VMOS Mesa structure and manufacturing process |
-
1978
- 1978-12-23 DE DE2855972A patent/DE2855972C2/de not_active Expired
-
1979
- 1979-12-11 WO PCT/DE1979/000145 patent/WO1980001334A1/de not_active Ceased
- 1979-12-11 US US06/503,078 patent/US4525924A/en not_active Expired - Fee Related
- 1979-12-11 GB GB8101369A patent/GB2064869B/en not_active Expired
- 1979-12-11 JP JP50005679A patent/JPS55501161A/ja active Pending
- 1979-12-19 IT IT28210/79A patent/IT1126607B/it active
-
1980
- 1980-07-01 EP EP80900001A patent/EP0020666A1/de not_active Withdrawn
- 1980-12-17 SE SE8008879A patent/SE443476B/sv not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| SE443476B (sv) | 1986-02-24 |
| DE2855972A1 (de) | 1980-06-26 |
| SE8008879L (sv) | 1980-12-17 |
| GB2064869B (en) | 1983-05-18 |
| EP0020666A1 (de) | 1981-01-07 |
| JPS55501161A (it) | 1980-12-18 |
| DE2855972C2 (de) | 1984-09-27 |
| GB2064869A (en) | 1981-06-17 |
| WO1980001334A1 (fr) | 1980-06-26 |
| US4525924A (en) | 1985-07-02 |
| IT7928210A0 (it) | 1979-12-19 |
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