IE33405L - Dividing semiconductor wafers into pellets - Google Patents

Dividing semiconductor wafers into pellets

Info

Publication number
IE33405L
IE33405L IE157669A IE157669A IE33405L IE 33405 L IE33405 L IE 33405L IE 157669 A IE157669 A IE 157669A IE 157669 A IE157669 A IE 157669A IE 33405 L IE33405 L IE 33405L
Authority
IE
Ireland
Prior art keywords
grooves
oxide
glass
wafer
division
Prior art date
Application number
IE157669A
Other versions
IE33405B1 (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IE33405L publication Critical patent/IE33405L/en
Publication of IE33405B1 publication Critical patent/IE33405B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Dicing (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)

Abstract

1293807 Semi-conductor device GENERAL ELECTRIC CO 24 Nov 1969 [9 Dec 1968] 57442/69 Heading H1K [Also in Division C7] A junction containing semi-conductor wafer is passivated by covering at least one of the surfaces with insulation to leave certain areas exposed, removing material from these areas to below a junction and electrophoretically depositing a passivating material, e.g. glass or plastics, into the grooves so formed. Typically a silicon wafer with several junctions is surface oxidized in steam, has registering grids cut in the oxide on opposite faces by etching through a photo-resist or wax mask and is then treated in an etchant to form intersecting sets of grooves extending through the junctions nearest to each face. The oxide overhanging the grooves may be left or removed by brushing or immersion in an ultrasonically agitated inert fluid. An oxide layer up to 500 Š thick is next formed on the groove walls preferably by treatment with an oxidizing agent such as hydrogen peroxide of strong nitric acid. This treatment improves adhesion of the glass electrophoretically deposited in the next step, in which a number or wafers are treated sequentially in an apparatus, operation of which is described in detail. If the oxide overhang was removed the glass increases in thickness towards the base of the grooves, while if it is left on the reverse is true. After firing to coalesce the glass particles electrodes are provided, either before or after sub-division, e.g. by scribing along the grooves, in apertures grit blasted or etched through the oxide. In the completed controlled rectifier shown in Fig. 8 in which the electrodes consist of superposed vapour deposited layers of chromium, nickel and silver, one electrode is soldered to heat sink 804. The wafer is then coated with resilient silicone rubber 814 and a rigid silicone casing 812 injection moulded around it. The invention is also described applied in PN, PIN, PNP and NPN structures with the grooves sometimes limited to one face. [GB1293807A]
IE157669A 1968-12-09 1969-11-21 Semiconductor wafers sub-dividable into pellets and methods of fabricating same IE33405B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78209368A 1968-12-09 1968-12-09

Publications (2)

Publication Number Publication Date
IE33405L true IE33405L (en) 1970-06-09
IE33405B1 IE33405B1 (en) 1974-06-12

Family

ID=25124923

Family Applications (1)

Application Number Title Priority Date Filing Date
IE157669A IE33405B1 (en) 1968-12-09 1969-11-21 Semiconductor wafers sub-dividable into pellets and methods of fabricating same

Country Status (6)

Country Link
BE (1) BE742700A (en)
DE (1) DE1961230C3 (en)
FR (1) FR2025718B1 (en)
GB (1) GB1293807A (en)
IE (1) IE33405B1 (en)
SE (1) SE367281B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7500492A (en) * 1975-01-16 1976-07-20 Philips Nv PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS.
JPS5776860A (en) * 1980-10-31 1982-05-14 Toshiba Corp Semiconductor device and its manufacture
DE3247938A1 (en) * 1982-12-24 1984-07-05 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor device having high reverse-voltage handling capacity
US4822757A (en) * 1987-11-10 1989-04-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE666930C (en) * 1936-09-26 1938-11-01 Philips Patentverwaltung Method for producing a top layer
FR1347043A (en) * 1961-09-29 1963-12-27 Ibm Coated articles and processes for producing their protective coatings
DE1439460A1 (en) * 1964-10-19 1968-12-12 Siemens Ag Electrical component, in particular semiconductor component, with a cover made of insulating material
US3505571A (en) * 1965-09-30 1970-04-07 Gen Electric Glass covered semiconductor device

Also Published As

Publication number Publication date
DE1961230C3 (en) 1974-09-26
DE1961230B2 (en) 1974-02-21
GB1293807A (en) 1972-10-25
DE1961230A1 (en) 1970-06-25
SE367281B (en) 1974-05-20
BE742700A (en) 1970-06-05
FR2025718A1 (en) 1970-09-11
FR2025718B1 (en) 1974-05-24
IE33405B1 (en) 1974-06-12

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