SE436670B - Halvledarlaser - Google Patents

Halvledarlaser

Info

Publication number
SE436670B
SE436670B SE7905635A SE7905635A SE436670B SE 436670 B SE436670 B SE 436670B SE 7905635 A SE7905635 A SE 7905635A SE 7905635 A SE7905635 A SE 7905635A SE 436670 B SE436670 B SE 436670B
Authority
SE
Sweden
Prior art keywords
epitaxial layer
layer
substrate
thickness
semiconductor laser
Prior art date
Application number
SE7905635A
Other languages
English (en)
Swedish (sv)
Other versions
SE7905635L (sv
Inventor
D Botez
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/004,143 external-priority patent/US4215319A/en
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7905635L publication Critical patent/SE7905635L/xx
Publication of SE436670B publication Critical patent/SE436670B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
SE7905635A 1978-07-31 1979-06-27 Halvledarlaser SE436670B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92977678A 1978-07-31 1978-07-31
US06/004,143 US4215319A (en) 1979-01-17 1979-01-17 Single filament semiconductor laser

Publications (2)

Publication Number Publication Date
SE7905635L SE7905635L (sv) 1980-02-01
SE436670B true SE436670B (sv) 1985-01-14

Family

ID=26672669

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7905635A SE436670B (sv) 1978-07-31 1979-06-27 Halvledarlaser

Country Status (4)

Country Link
DE (1) DE2929719C2 (it)
GB (1) GB2027261B (it)
IT (1) IT1121922B (it)
SE (1) SE436670B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2062949B (en) * 1979-10-12 1983-08-10 Rca Corp Single filament semiconductor laser with large emitting area
US4426701A (en) * 1981-12-23 1984-01-17 Rca Corporation Constricted double heterostructure semiconductor laser
GB2129211B (en) * 1982-10-21 1987-01-14 Rca Corp Semiconductor laser and a method of making same
FR2535121B1 (fr) * 1982-10-25 1989-01-06 Rca Corp Laser a semi-conducteur et son procede de fabrication
DE3240700C2 (de) * 1982-11-04 1994-07-07 Rca Corp Verfahren zum Herstellen eines Halbleiterlasers und danach hergestellter Halbleiterlaser
US4937836A (en) * 1983-11-30 1990-06-26 Sharp Kabushiki Kaisha Semiconductor laser device and production method therefor
DE4240539C2 (de) * 1992-01-21 1997-07-03 Mitsubishi Electric Corp Verfahren zur Herstellung eines Halbleiterlasers

Also Published As

Publication number Publication date
IT1121922B (it) 1986-04-23
IT7923845A0 (it) 1979-06-25
DE2929719C2 (de) 1982-08-05
GB2027261A (en) 1980-02-13
GB2027261B (en) 1982-10-06
SE7905635L (sv) 1980-02-01
DE2929719A1 (de) 1980-02-14

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