SE413819B - Minnessystem innefattande varandra korsande ord- och bitledningar samt halvledarminnesceller - Google Patents

Minnessystem innefattande varandra korsande ord- och bitledningar samt halvledarminnesceller

Info

Publication number
SE413819B
SE413819B SE7610137A SE7610137A SE413819B SE 413819 B SE413819 B SE 413819B SE 7610137 A SE7610137 A SE 7610137A SE 7610137 A SE7610137 A SE 7610137A SE 413819 B SE413819 B SE 413819B
Authority
SE
Sweden
Prior art keywords
bites
semi
system including
memory system
crossing words
Prior art date
Application number
SE7610137A
Other languages
English (en)
Swedish (sv)
Other versions
SE7610137L (sv
Inventor
P E Cade
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SE7610137L publication Critical patent/SE7610137L/xx
Publication of SE413819B publication Critical patent/SE413819B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
SE7610137A 1975-09-22 1976-09-14 Minnessystem innefattande varandra korsande ord- och bitledningar samt halvledarminnesceller SE413819B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/615,262 US3986180A (en) 1975-09-22 1975-09-22 Depletion mode field effect transistor memory system

Publications (2)

Publication Number Publication Date
SE7610137L SE7610137L (sv) 1977-03-23
SE413819B true SE413819B (sv) 1980-06-23

Family

ID=24464679

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7610137A SE413819B (sv) 1975-09-22 1976-09-14 Minnessystem innefattande varandra korsande ord- och bitledningar samt halvledarminnesceller

Country Status (9)

Country Link
US (1) US3986180A (index.php)
JP (2) JPS5811105B2 (index.php)
CA (1) CA1085053A (index.php)
DE (1) DE2632036C2 (index.php)
FR (1) FR2325149A1 (index.php)
GB (1) GB1505618A (index.php)
IT (1) IT1074052B (index.php)
NL (1) NL7609702A (index.php)
SE (1) SE413819B (index.php)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086662A (en) * 1975-11-07 1978-04-25 Hitachi, Ltd. Memory system with read/write control lines
US4040016A (en) * 1976-03-31 1977-08-02 International Business Machines Corporation Twin nodes capacitance memory
US4080590A (en) * 1976-03-31 1978-03-21 International Business Machines Corporation Capacitor storage memory
GB1579386A (en) * 1976-07-22 1980-11-19 Tokyo Shibaura Electric Co Semiconductor memory device and method of manufacturing the same
US5808328A (en) * 1977-02-21 1998-09-15 Zaidan Hojin Handotai Kenkyu Shinkokai High-speed and high-density semiconductor memory
DE2807181C2 (de) * 1977-02-21 1985-11-28 Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, Miyagi Halbleiterspeichervorrichtung
DE2726014A1 (de) * 1977-06-08 1978-12-21 Siemens Ag Dynamisches speicherelement
JPS5447587A (en) * 1977-09-22 1979-04-14 Handotai Kenkyu Shinkokai Semiconductor memory
JPS6024591B2 (ja) * 1979-12-06 1985-06-13 セイコーインスツルメンツ株式会社 静電誘導トランジスタ読み出し専用記憶装置
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
JPS6055919B2 (ja) * 1980-03-18 1985-12-07 日本電気株式会社 半導体記憶装置
JPS5948477B2 (ja) * 1980-03-31 1984-11-27 富士通株式会社 半導体記憶装置
JPS5832789B2 (ja) * 1980-07-18 1983-07-15 富士通株式会社 半導体メモリ
US4423490A (en) * 1980-10-27 1983-12-27 Burroughs Corporation JFET Dynamic memory
US4413330A (en) * 1981-06-30 1983-11-01 International Business Machines Corporation Apparatus for the reduction of the short-channel effect in a single-polysilicon, one-device FET dynamic RAM array
DE3202028A1 (de) * 1982-01-22 1983-07-28 Siemens AG, 1000 Berlin und 8000 München Integrieter dynamischer schreib-lese-speicher
US4506351A (en) * 1982-06-23 1985-03-19 International Business Machines Corporation One-device random access memory having enhanced sense signal
JPS60209996A (ja) * 1984-03-31 1985-10-22 Toshiba Corp 半導体記憶装置
KR940002835B1 (ko) * 1991-04-17 1994-04-04 재단법인 한국전자통신연구소 접합전계형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조
US5677637A (en) * 1992-03-25 1997-10-14 Hitachi, Ltd. Logic device using single electron coulomb blockade techniques
GB9226382D0 (en) * 1992-12-18 1993-02-10 Hitachi Europ Ltd Memory device
JPH08125152A (ja) * 1994-10-28 1996-05-17 Canon Inc 半導体装置、それを用いた相関演算装置、ａｄ変換器、ｄａ変換器、信号処理システム
JPH09129864A (ja) 1995-10-30 1997-05-16 Canon Inc 半導体装置及びそれを用いた半導体回路、相関演算装置、信号処理システム
US6180975B1 (en) 1998-10-30 2001-01-30 International Business Machines Corporation Depletion strap semiconductor memory device
US8035139B2 (en) * 2007-09-02 2011-10-11 Suvolta, Inc. Dynamic random access memory having junction field effect transistor cell access device
KR101926336B1 (ko) * 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6552336B2 (ja) * 2014-08-29 2019-07-31 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3510689A (en) * 1966-11-01 1970-05-05 Massachusetts Inst Technology Bistable flip-flop circuit with memory
GB1471617A (en) * 1973-06-21 1977-04-27 Sony Corp Circuits comprising a semiconductor device
DE2450116C2 (de) * 1974-10-22 1976-09-16 Siemens AG, 1000 Berlin und 8000 München Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb
US3916390A (en) * 1974-12-31 1975-10-28 Ibm Dynamic memory with non-volatile back-up mode
DE2514582C2 (de) * 1975-04-03 1977-05-26 Siemens Ag Schaltung zur erzeugung von leseimpulsen
DE2539910C3 (de) * 1975-09-08 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterspeicher

Also Published As

Publication number Publication date
IT1074052B (it) 1985-04-17
CA1085053A (en) 1980-09-02
SE7610137L (sv) 1977-03-23
JPS5766594A (en) 1982-04-22
FR2325149A1 (fr) 1977-04-15
FR2325149B1 (index.php) 1978-06-30
NL7609702A (nl) 1977-03-24
DE2632036C2 (de) 1982-09-23
JPS5811105B2 (ja) 1983-03-01
DE2632036A1 (de) 1977-03-31
JPS5738992B2 (index.php) 1982-08-18
GB1505618A (en) 1978-03-30
JPS5239387A (en) 1977-03-26
US3986180A (en) 1976-10-12

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