SE411606B - Halvledardon innefattande bl a ett passiviseringsskikt av polykristallint kisel som innehaller syre - Google Patents
Halvledardon innefattande bl a ett passiviseringsskikt av polykristallint kisel som innehaller syreInfo
- Publication number
- SE411606B SE411606B SE7511927A SE7511927A SE411606B SE 411606 B SE411606 B SE 411606B SE 7511927 A SE7511927 A SE 7511927A SE 7511927 A SE7511927 A SE 7511927A SE 411606 B SE411606 B SE 411606B
- Authority
- SE
- Sweden
- Prior art keywords
- halfledardon
- containing acid
- silicone containing
- polycrystalline silicone
- passivization
- Prior art date
Links
- 239000002253 acid Substances 0.000 title 1
- 229920001296 polysiloxane Polymers 0.000 title 1
Classifications
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S257/905—Plural dram cells share common contact or common trench
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49123765A JPS6022497B2 (ja) | 1974-10-26 | 1974-10-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7511927L SE7511927L (sv) | 1976-04-27 |
SE411606B true SE411606B (sv) | 1980-01-14 |
Family
ID=14868714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7511927A SE411606B (sv) | 1974-10-26 | 1975-10-24 | Halvledardon innefattande bl a ett passiviseringsskikt av polykristallint kisel som innehaller syre |
Country Status (15)
Country | Link |
---|---|
US (1) | US4063275A (et) |
JP (1) | JPS6022497B2 (et) |
AT (1) | AT370561B (et) |
AU (1) | AU504667B2 (et) |
BR (1) | BR7506996A (et) |
CA (1) | CA1046650A (et) |
CH (1) | CH608653A5 (et) |
DE (1) | DE2547304A1 (et) |
DK (1) | DK142758B (et) |
ES (1) | ES442102A1 (et) |
FR (1) | FR2290040A1 (et) |
GB (1) | GB1515179A (et) |
IT (1) | IT1044592B (et) |
NL (1) | NL183260C (et) |
SE (1) | SE411606B (et) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2632647A1 (de) * | 1976-07-20 | 1978-01-26 | Siemens Ag | Halbleiterbauelement mit passivierender schutzschicht |
IN147578B (et) * | 1977-02-24 | 1980-04-19 | Rca Corp | |
DE2730367A1 (de) * | 1977-07-05 | 1979-01-18 | Siemens Ag | Verfahren zum passivieren von halbleiterelementen |
US4174252A (en) * | 1978-07-26 | 1979-11-13 | Rca Corporation | Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes |
CA1136773A (en) * | 1978-08-14 | 1982-11-30 | Norikazu Ohuchi | Semiconductor device |
FR2459551A1 (fr) * | 1979-06-19 | 1981-01-09 | Thomson Csf | Procede et structure de passivation a autoalignement sur l'emplacement d'un masque |
GB2071411B (en) * | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
US4344985A (en) * | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
US4420765A (en) * | 1981-05-29 | 1983-12-13 | Rca Corporation | Multi-layer passivant system |
AT384121B (de) * | 1983-03-28 | 1987-10-12 | Shell Austria | Verfahren zum gettern von halbleiterbauelementen |
JPS6042859A (ja) * | 1983-08-19 | 1985-03-07 | Toshiba Corp | 高耐圧半導体装置の製造方法 |
JPS61222172A (ja) * | 1985-03-15 | 1986-10-02 | Sharp Corp | Mosfetのゲ−ト絶縁膜形成方法 |
JPS6276673A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 高耐圧半導体装置 |
DE3542166A1 (de) * | 1985-11-29 | 1987-06-04 | Telefunken Electronic Gmbh | Halbleiterbauelement |
EP0388612B1 (en) * | 1989-03-24 | 1994-11-30 | International Business Machines Corporation | Semiconductor device with self-aligned contact to buried subcollector |
JPH04343479A (ja) * | 1991-05-21 | 1992-11-30 | Nec Yamagata Ltd | 可変容量ダイオード |
EP0620586B1 (en) * | 1993-04-05 | 2001-06-20 | Denso Corporation | Semiconductor device having thin film resistor |
US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
CN1293374C (zh) * | 2002-04-17 | 2007-01-03 | 北京师范大学 | 能直接测量波长的新结构光电探测器及其探测方法 |
CN111816574B (zh) * | 2020-05-29 | 2022-03-04 | 济宁东方芯电子科技有限公司 | 一种uv膜模板及利用uv膜模板实现洁净玻璃钝化的方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US2789258A (en) * | 1955-06-29 | 1957-04-16 | Raytheon Mfg Co | Intrinsic coatings for semiconductor junctions |
DE1184178B (de) * | 1960-02-20 | 1964-12-23 | Standard Elektrik Lorenz Ag | Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen |
CH428947A (fr) * | 1966-01-31 | 1967-01-31 | Centre Electron Horloger | Procédé de fabrication d'un circuit intégré |
GB1211354A (en) * | 1966-12-01 | 1970-11-04 | Gen Electric | Improvements relating to passivated semiconductor devices |
DE1614455C3 (de) * | 1967-03-16 | 1979-07-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers |
US3419746A (en) * | 1967-05-25 | 1968-12-31 | Bell Telephone Labor Inc | Light sensitive storage device including diode array |
US3440477A (en) * | 1967-10-18 | 1969-04-22 | Bell Telephone Labor Inc | Multiple readout electron beam device |
NL162250C (nl) * | 1967-11-21 | 1980-04-15 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen. |
US3558348A (en) * | 1968-04-18 | 1971-01-26 | Bell Telephone Labor Inc | Dielectric films for semiconductor devices |
US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
JPS497870B1 (et) * | 1969-06-06 | 1974-02-22 | ||
US3878549A (en) * | 1970-10-27 | 1975-04-15 | Shumpei Yamazaki | Semiconductor memories |
DE2220807A1 (de) * | 1971-04-30 | 1972-11-16 | Texas Instruments Inc | Verfahren und Vorrichtung zum Abscheiden von polykristallinen Duennfilmen aus Silicium und Siliciumdioxid auf Halbleitersubstraten |
NL7204741A (et) * | 1972-04-08 | 1973-10-10 | ||
JPS532552B2 (et) * | 1974-03-30 | 1978-01-28 |
-
1974
- 1974-10-26 JP JP49123765A patent/JPS6022497B2/ja not_active Expired
-
1975
- 1975-10-22 US US05/624,889 patent/US4063275A/en not_active Expired - Lifetime
- 1975-10-22 DE DE19752547304 patent/DE2547304A1/de active Granted
- 1975-10-23 GB GB43656/75A patent/GB1515179A/en not_active Expired
- 1975-10-23 CH CH1371375A patent/CH608653A5/xx not_active IP Right Cessation
- 1975-10-23 CA CA238,212A patent/CA1046650A/en not_active Expired
- 1975-10-24 BR BR7506996*A patent/BR7506996A/pt unknown
- 1975-10-24 AU AU85991/75A patent/AU504667B2/en not_active Expired
- 1975-10-24 DK DK480275AA patent/DK142758B/da not_active IP Right Cessation
- 1975-10-24 SE SE7511927A patent/SE411606B/xx not_active Application Discontinuation
- 1975-10-24 IT IT28663/75A patent/IT1044592B/it active
- 1975-10-25 ES ES442102A patent/ES442102A1/es not_active Expired
- 1975-10-27 AT AT0818475A patent/AT370561B/de not_active IP Right Cessation
- 1975-10-27 FR FR7532826A patent/FR2290040A1/fr active Granted
- 1975-10-27 NL NLAANVRAGE7512559,A patent/NL183260C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
SE7511927L (sv) | 1976-04-27 |
GB1515179A (en) | 1978-06-21 |
ATA818475A (de) | 1982-08-15 |
AT370561B (de) | 1983-04-11 |
BR7506996A (pt) | 1976-08-17 |
FR2290040B1 (et) | 1979-08-17 |
IT1044592B (it) | 1980-03-31 |
JPS5149686A (et) | 1976-04-30 |
NL183260C (nl) | 1988-09-01 |
AU504667B2 (en) | 1979-10-25 |
CH608653A5 (et) | 1979-01-15 |
DK142758B (da) | 1981-01-12 |
CA1046650A (en) | 1979-01-16 |
AU8599175A (en) | 1977-04-28 |
DK480275A (et) | 1976-04-27 |
NL183260B (nl) | 1988-04-05 |
JPS6022497B2 (ja) | 1985-06-03 |
NL7512559A (nl) | 1976-04-28 |
US4063275A (en) | 1977-12-13 |
FR2290040A1 (fr) | 1976-05-28 |
DK142758C (et) | 1981-08-10 |
DE2547304A1 (de) | 1976-04-29 |
DE2547304C2 (et) | 1988-08-11 |
ES442102A1 (es) | 1977-03-16 |
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