SE399980B - Forfarande for tillverkning av ett fast minne - Google Patents
Forfarande for tillverkning av ett fast minneInfo
- Publication number
- SE399980B SE399980B SE7504916A SE7504916A SE399980B SE 399980 B SE399980 B SE 399980B SE 7504916 A SE7504916 A SE 7504916A SE 7504916 A SE7504916 A SE 7504916A SE 399980 B SE399980 B SE 399980B
- Authority
- SE
- Sweden
- Prior art keywords
- procedure
- manufacture
- fixed memory
- memory
- fixed
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/36—Gate programmed, e.g. different gate material or no gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US468422A US3914855A (en) | 1974-05-09 | 1974-05-09 | Methods for making MOS read-only memories |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7504916L SE7504916L (sv) | 1975-11-10 |
SE399980B true SE399980B (sv) | 1978-03-06 |
Family
ID=23859749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7504916A SE399980B (sv) | 1974-05-09 | 1975-04-28 | Forfarande for tillverkning av ett fast minne |
Country Status (11)
Country | Link |
---|---|
US (1) | US3914855A (sv) |
JP (1) | JPS5129845A (sv) |
BE (1) | BE828758A (sv) |
CA (1) | CA1031079A (sv) |
DE (1) | DE2520190A1 (sv) |
ES (1) | ES437532A1 (sv) |
FR (1) | FR2270659B1 (sv) |
GB (1) | GB1502512A (sv) |
IT (1) | IT1032824B (sv) |
NL (1) | NL7505403A (sv) |
SE (1) | SE399980B (sv) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4061506A (en) * | 1975-05-01 | 1977-12-06 | Texas Instruments Incorporated | Correcting doping defects |
JPS588588B2 (ja) * | 1975-05-28 | 1983-02-16 | 株式会社日立製作所 | 半導体集積回路 |
JPS5851427B2 (ja) * | 1975-09-04 | 1983-11-16 | 株式会社日立製作所 | 絶縁ゲ−ト型リ−ド・オンリ−・メモリの製造方法 |
DE2545047C3 (de) * | 1975-10-08 | 1978-09-21 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung eines Halbleiterfestwertspeichers |
US4059826A (en) * | 1975-12-29 | 1977-11-22 | Texas Instruments Incorporated | Semiconductor memory array with field effect transistors programmable by alteration of threshold voltage |
US4207585A (en) * | 1976-07-01 | 1980-06-10 | Texas Instruments Incorporated | Silicon gate MOS ROM |
US4143390A (en) * | 1976-12-14 | 1979-03-06 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device and a logical circuit formed of the same |
US4080718A (en) * | 1976-12-14 | 1978-03-28 | Smc Standard Microsystems Corporation | Method of modifying electrical characteristics of MOS devices using ion implantation |
US4600933A (en) * | 1976-12-14 | 1986-07-15 | Standard Microsystems Corporation | Semiconductor integrated circuit structure with selectively modified insulation layer |
US4151021A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | Method of making a high density floating gate electrically programmable ROM |
US4271421A (en) * | 1977-01-26 | 1981-06-02 | Texas Instruments Incorporated | High density N-channel silicon gate read only memory |
US4151020A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | High density N-channel silicon gate read only memory |
US4238694A (en) * | 1977-05-23 | 1980-12-09 | Bell Telephone Laboratories, Incorporated | Healing radiation defects in semiconductors |
DE2726014A1 (de) * | 1977-06-08 | 1978-12-21 | Siemens Ag | Dynamisches speicherelement |
JPS54121685A (en) * | 1978-03-14 | 1979-09-20 | Kyushu Nippon Electric | Ic and method of fabricating same |
DE2909197A1 (de) * | 1978-03-20 | 1979-10-04 | Texas Instruments Inc | Verfahren zur herstellung eines festspeichers und festspeichermatrix |
US4290184A (en) * | 1978-03-20 | 1981-09-22 | Texas Instruments Incorporated | Method of making post-metal programmable MOS read only memory |
US4230504B1 (en) * | 1978-04-27 | 1997-03-04 | Texas Instruments Inc | Method of making implant programmable N-channel rom |
US4384399A (en) * | 1978-03-20 | 1983-05-24 | Texas Instruments Incorporated | Method of making a metal programmable MOS read only memory device |
US4294001A (en) * | 1979-01-08 | 1981-10-13 | Texas Instruments Incorporated | Method of making implant programmable metal gate MOS read only memory |
US4326329A (en) * | 1978-05-18 | 1982-04-27 | Texas Instruments Incorporated | Method of making a contact programmable double level polysilicon MOS read only memory |
US4219836A (en) * | 1978-05-18 | 1980-08-26 | Texas Instruments Incorporated | Contact programmable double level polysilicon MOS read only memory |
US4591891A (en) * | 1978-06-05 | 1986-05-27 | Texas Instruments Incorporated | Post-metal electron beam programmable MOS read only memory |
US4268950A (en) * | 1978-06-05 | 1981-05-26 | Texas Instruments Incorporated | Post-metal ion implant programmable MOS read only memory |
US4272303A (en) * | 1978-06-05 | 1981-06-09 | Texas Instruments Incorporated | Method of making post-metal ion beam programmable MOS read only memory |
US4208727A (en) * | 1978-06-15 | 1980-06-17 | Texas Instruments Incorporated | Semiconductor read only memory using MOS diodes |
US4198696A (en) * | 1978-10-24 | 1980-04-15 | International Business Machines Corporation | Laser cut storage cell |
US4342100A (en) * | 1979-01-08 | 1982-07-27 | Texas Instruments Incorporated | Implant programmable metal gate MOS read only memory |
US4236921A (en) * | 1979-03-02 | 1980-12-02 | Abex Corporation | Heat resistant alloy castings |
US4282646A (en) * | 1979-08-20 | 1981-08-11 | International Business Machines Corporation | Method of making a transistor array |
US4295209A (en) * | 1979-11-28 | 1981-10-13 | General Motors Corporation | Programming an IGFET read-only-memory |
US4299862A (en) * | 1979-11-28 | 1981-11-10 | General Motors Corporation | Etching windows in thick dielectric coatings overlying semiconductor device surfaces |
US4364167A (en) * | 1979-11-28 | 1982-12-21 | General Motors Corporation | Programming an IGFET read-only-memory |
FR2471086A1 (fr) * | 1979-11-30 | 1981-06-12 | Dassault Electronique | Circuit a transistors pour la realisation de fonctions logiques |
DE3044984A1 (de) * | 1979-11-30 | 1982-04-15 | Dassault Electronique | Integrierte transistorschaltung, insbesondere fuer codierung |
US4458406A (en) * | 1979-12-28 | 1984-07-10 | Ibm Corporation | Making LSI devices with double level polysilicon structures |
US4322823A (en) * | 1980-03-03 | 1982-03-30 | International Business Machines Corp. | Storage system having bilateral field effect transistor personalization |
US4372031A (en) * | 1980-03-21 | 1983-02-08 | Texas Instruments Incorporated | Method of making high density memory cells with improved metal-to-silicon contacts |
US4336603A (en) * | 1980-06-18 | 1982-06-22 | International Business Machines Corp. | Three terminal electrically erasable programmable read only memory |
US4380057A (en) * | 1980-10-27 | 1983-04-12 | International Business Machines Corporation | Electrically alterable double dense memory |
US4375085A (en) * | 1981-01-02 | 1983-02-22 | International Business Machines Corporation | Dense electrically alterable read only memory |
US4359817A (en) * | 1981-05-28 | 1982-11-23 | General Motors Corporation | Method for making late programmable read-only memory devices |
US4358889A (en) * | 1981-05-28 | 1982-11-16 | General Motors Corporation | Process for making a late programming enhanced contact ROM |
US4364165A (en) * | 1981-05-28 | 1982-12-21 | General Motors Corporation | Late programming using a silicon nitride interlayer |
US4365405A (en) * | 1981-05-28 | 1982-12-28 | General Motors Corporation | Method of late programming read only memory devices |
JPS5830154A (ja) * | 1981-08-17 | 1983-02-22 | Toshiba Corp | 固定記憶半導体装置およびその製造方法 |
US4546453A (en) * | 1982-06-22 | 1985-10-08 | Motorola, Inc. | Four-state ROM cell with increased differential between states |
US4547959A (en) * | 1983-02-22 | 1985-10-22 | General Motors Corporation | Uses for buried contacts in integrated circuits |
US4633572A (en) * | 1983-02-22 | 1987-01-06 | General Motors Corporation | Programming power paths in an IC by combined depletion and enhancement implants |
JPH0740595B2 (ja) * | 1985-11-26 | 1995-05-01 | ロ−ム株式会社 | 半導体装置の製造方法 |
US5378647A (en) * | 1993-10-25 | 1995-01-03 | United Microelectronics Corporation | Method of making a bottom gate mask ROM device |
US5943573A (en) * | 1997-01-17 | 1999-08-24 | United Microelectronics Corp. | Method of fabricating semiconductor read-only memory device |
TW319904B (en) * | 1997-01-20 | 1997-11-11 | United Microelectronics Corp | Three dimensional read only memory and manufacturing method thereof |
US6161053A (en) * | 1998-08-26 | 2000-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd | In-situ binary PCM code indentifier to verify a ROM code id during processing |
FR2826169A1 (fr) | 2001-06-15 | 2002-12-20 | St Microelectronics Sa | Memoire mos a lecture seulement |
US6927993B2 (en) | 2003-08-14 | 2005-08-09 | Silicon Storage Technology, Inc. | Multi-bit ROM cell, for storing on of N>4 possible states and having bi-directional read, an array of such cells |
US6870233B2 (en) * | 2003-08-14 | 2005-03-22 | Silicon Storage Technology, Inc. | Multi-bit ROM cell with bi-directional read and a method for making thereof |
US7012310B2 (en) * | 2003-08-14 | 2006-03-14 | Silcon Storage Technology, Inc. | Array of multi-bit ROM cells with each cell having bi-directional read and a method for making the array |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3377513A (en) * | 1966-05-02 | 1968-04-09 | North American Rockwell | Integrated circuit diode matrix |
US3423822A (en) * | 1967-02-27 | 1969-01-28 | Northern Electric Co | Method of making large scale integrated circuit |
-
1974
- 1974-05-09 US US468422A patent/US3914855A/en not_active Expired - Lifetime
-
1975
- 1975-04-21 CA CA225,090A patent/CA1031079A/en not_active Expired
- 1975-04-28 SE SE7504916A patent/SE399980B/sv unknown
- 1975-05-02 JP JP5261175A patent/JPS5129845A/ja active Pending
- 1975-05-06 BE BE156081A patent/BE828758A/xx unknown
- 1975-05-06 IT IT68156/75A patent/IT1032824B/it active
- 1975-05-06 DE DE19752520190 patent/DE2520190A1/de not_active Withdrawn
- 1975-05-07 NL NL7505403A patent/NL7505403A/xx not_active Application Discontinuation
- 1975-05-07 FR FR7514383A patent/FR2270659B1/fr not_active Expired
- 1975-05-09 ES ES437532A patent/ES437532A1/es not_active Expired
- 1975-05-09 GB GB19652/75A patent/GB1502512A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2270659A1 (sv) | 1975-12-05 |
US3914855A (en) | 1975-10-28 |
SE7504916L (sv) | 1975-11-10 |
DE2520190A1 (de) | 1975-11-27 |
GB1502512A (en) | 1978-03-01 |
IT1032824B (it) | 1979-06-20 |
CA1031079A (en) | 1978-05-09 |
ES437532A1 (es) | 1977-01-16 |
NL7505403A (nl) | 1975-11-11 |
BE828758A (fr) | 1975-09-01 |
FR2270659B1 (sv) | 1980-06-20 |
JPS5129845A (sv) | 1976-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE399980B (sv) | Forfarande for tillverkning av ett fast minne | |
SE7500242L (sv) | Forfarande for framstellning av en brenslecell | |
SE428562B (sv) | Forfarande for framstellning av purinderivat | |
SE389100B (sv) | Forfarande for tillverkning av ett naturligt godningsmedel | |
FI55848B (fi) | Foerfarande foer framstaellning av ett proteolytiskt enzym | |
SE7415523L (sv) | Anordning for en vesentligen kinematisk styrning av ett fartyg | |
SE410728B (sv) | Forfarande for framstellning av ett oorganiskt komplex | |
SE410024B (sv) | Sats av element for ett stengsel | |
SE7602945L (sv) | Forfarande for tillverkning av ett gjutstycke | |
SE7511958L (sv) | Forfarande for forankring av ett festelement | |
SE422052B (sv) | Forfarande for framstellning av vissa angivna 1-fenoxi-2-hydroxi-3-aminofenyl-propylderivat | |
SE429353B (sv) | Flyttbar mellanvegg med tva yttre veggskal av skivor | |
SE7702816L (sv) | Forfarande for framstellning av ett dubbelgolv | |
FI54053B (fi) | Foerfarande foer isolering av hemagglutinin- och neuraminidasbestaondsdelarna ur ett influensavirus | |
SE422202B (sv) | Forfarande for framstellning av amidoximderivat | |
FI54728C (fi) | Plaotklaedsel foer ett takfoenster | |
FR2282273A1 (fr) | Composes heterocycliques | |
NO141293C (no) | Konstruksjonsdeler for opplagring av elektriske maskiner | |
FR2290209A1 (fr) | Composes heterocycliques | |
SE384197B (sv) | Forfarande for tillverkning av ett stoppat foremal | |
SE7504060L (sv) | Av ett vikbart emne tillverkad forpackning | |
SE412534B (sv) | Forfarande for framstellning av ett gangjern | |
SE7804075L (sv) | Forfarande for framstellning av ett nytt antibiotikum | |
FI54412C (fi) | Foerfarande foer uppvaermning av ett vaermevaexlaraggregat | |
SE7512571L (sv) | Forfarande for framstellning av prostaglandinanaloger |