SE0302810D0 - Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof - Google Patents

Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof

Info

Publication number
SE0302810D0
SE0302810D0 SE0302810A SE0302810A SE0302810D0 SE 0302810 D0 SE0302810 D0 SE 0302810D0 SE 0302810 A SE0302810 A SE 0302810A SE 0302810 A SE0302810 A SE 0302810A SE 0302810 D0 SE0302810 D0 SE 0302810D0
Authority
SE
Sweden
Prior art keywords
thin film
film resistor
integrated circuit
monolithically integrated
fabrication method
Prior art date
Application number
SE0302810A
Other languages
English (en)
Swedish (sv)
Inventor
Hans Norstroem
Ted Johansson
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to SE0302810A priority Critical patent/SE0302810D0/xx
Publication of SE0302810D0 publication Critical patent/SE0302810D0/xx
Priority to EP04445089A priority patent/EP1526575A3/de
Priority to US10/946,932 priority patent/US7119415B2/en
Priority to JP2004306438A priority patent/JP2005129947A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SE0302810A 2003-10-24 2003-10-24 Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof SE0302810D0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE0302810A SE0302810D0 (sv) 2003-10-24 2003-10-24 Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
EP04445089A EP1526575A3 (de) 2003-10-24 2004-09-07 Monolithisch integrierte Schaltungsanordnung mit einem Dünnschichtwiderstand und Verfahren zu deren Herstellung
US10/946,932 US7119415B2 (en) 2003-10-24 2004-09-22 Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
JP2004306438A JP2005129947A (ja) 2003-10-24 2004-10-21 薄膜抵抗器を含むモノリシック集積回路およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0302810A SE0302810D0 (sv) 2003-10-24 2003-10-24 Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof

Publications (1)

Publication Number Publication Date
SE0302810D0 true SE0302810D0 (sv) 2003-10-24

Family

ID=29546626

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0302810A SE0302810D0 (sv) 2003-10-24 2003-10-24 Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof

Country Status (4)

Country Link
US (1) US7119415B2 (de)
EP (1) EP1526575A3 (de)
JP (1) JP2005129947A (de)
SE (1) SE0302810D0 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307314B2 (en) * 2004-06-16 2007-12-11 Cree Microwave Llc LDMOS transistor with improved gate shield
US7323762B2 (en) * 2004-11-01 2008-01-29 Phoenix Precision Technology Corporation Semiconductor package substrate with embedded resistors and method for fabricating the same
US20060176145A1 (en) * 2005-02-07 2006-08-10 Intel Corporation Electronic substrates with thin-film resistors coupled to one or more relatively thick traces
JP5070693B2 (ja) * 2005-11-11 2012-11-14 サンケン電気株式会社 半導体装置
US7733212B2 (en) * 2007-04-26 2010-06-08 Hewlett-Packard Development Company, L.P. Resistor
US8212321B2 (en) * 2009-10-30 2012-07-03 Freescale Semiconductor, Inc. Semiconductor device with feedback control
JP2011249728A (ja) * 2010-05-31 2011-12-08 Toshiba Corp 半導体装置および半導体装置の製造方法
US8664717B2 (en) * 2012-01-09 2014-03-04 Globalfoundries Inc. Semiconductor device with an oversized local contact as a Faraday shield
US9064868B2 (en) * 2012-10-12 2015-06-23 Globalfoundries Inc. Advanced faraday shield for a semiconductor device
US9502284B2 (en) 2013-12-31 2016-11-22 Texas Instruments Incorporated Metal thin film resistor and process
CN104992978B (zh) * 2015-06-01 2018-11-23 电子科技大学 一种射频ldmos晶体管及其制造方法
US9917082B1 (en) 2017-01-17 2018-03-13 International Business Machines Corporation Approach to fabrication of an on-chip resistor with a field effect transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59009155D1 (de) * 1990-11-12 1995-06-29 Siemens Ag Halbleiterbauelement für hohe Sperrspannung.
JPH0563144A (ja) * 1991-08-30 1993-03-12 Ricoh Co Ltd 薄膜抵抗素子をもつ半導体集積回路装置
US5252848A (en) * 1992-02-03 1993-10-12 Motorola, Inc. Low on resistance field effect transistor
US5349223A (en) * 1993-12-14 1994-09-20 Xerox Corporation High current high voltage vertical PMOS in ultra high voltage CMOS
US5382826A (en) * 1993-12-21 1995-01-17 Xerox Corporation Stacked high voltage transistor unit
KR100275758B1 (ko) * 1998-12-17 2001-02-01 김덕중 제너 다이오드를 내장한 수평형 모스 게이트형 반도체 소자 및그 제조 방법
US6222229B1 (en) * 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
JP4797225B2 (ja) * 1999-05-27 2011-10-19 富士電機株式会社 半導体装置
JP3715502B2 (ja) * 2000-03-14 2005-11-09 株式会社東芝 半導体装置及びその製造方法
US6525390B2 (en) * 2000-05-18 2003-02-25 Fuji Electric Co., Ltd. MIS semiconductor device with low on resistance and high breakdown voltage
US6720245B2 (en) * 2000-09-07 2004-04-13 Interuniversitair Microelektronica Centrum (Imec) Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme
GB0107408D0 (en) * 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
US6744117B2 (en) * 2002-02-28 2004-06-01 Motorola, Inc. High frequency semiconductor device and method of manufacture

Also Published As

Publication number Publication date
EP1526575A3 (de) 2008-05-07
US20050087845A1 (en) 2005-04-28
JP2005129947A (ja) 2005-05-19
EP1526575A2 (de) 2005-04-27
US7119415B2 (en) 2006-10-10

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