SE0001815L - Effekttransistorer för radiofrekvenser - Google Patents

Effekttransistorer för radiofrekvenser

Info

Publication number
SE0001815L
SE0001815L SE0001815A SE0001815A SE0001815L SE 0001815 L SE0001815 L SE 0001815L SE 0001815 A SE0001815 A SE 0001815A SE 0001815 A SE0001815 A SE 0001815A SE 0001815 L SE0001815 L SE 0001815L
Authority
SE
Sweden
Prior art keywords
rectangular area
transistor
chip
cell
parallel
Prior art date
Application number
SE0001815A
Other languages
Unknown language ( )
English (en)
Other versions
SE520109C2 (sv
SE0001815D0 (sv
Inventor
Andrej Litwin
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0001815A priority Critical patent/SE520109C2/sv
Publication of SE0001815D0 publication Critical patent/SE0001815D0/sv
Priority to TW089114512A priority patent/TW469647B/zh
Priority to US09/858,902 priority patent/US6507047B2/en
Priority to EP01934751A priority patent/EP1287559A1/en
Priority to PCT/SE2001/001098 priority patent/WO2001088980A1/en
Priority to AU2001260904A priority patent/AU2001260904A1/en
Publication of SE0001815L publication Critical patent/SE0001815L/sv
Publication of SE520109C2 publication Critical patent/SE520109C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
SE0001815A 2000-05-17 2000-05-17 Effekttransistorer för radiofrekvenser SE520109C2 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE0001815A SE520109C2 (sv) 2000-05-17 2000-05-17 Effekttransistorer för radiofrekvenser
TW089114512A TW469647B (en) 2000-05-17 2000-07-20 Power transistors for radio frequencies
US09/858,902 US6507047B2 (en) 2000-05-17 2001-05-17 Power transistors for radio frequencies
EP01934751A EP1287559A1 (en) 2000-05-17 2001-05-17 Power transistors for radio frequencies
PCT/SE2001/001098 WO2001088980A1 (en) 2000-05-17 2001-05-17 Power transistors for radio frequencies
AU2001260904A AU2001260904A1 (en) 2000-05-17 2001-05-17 Power transistors for radio frequencies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0001815A SE520109C2 (sv) 2000-05-17 2000-05-17 Effekttransistorer för radiofrekvenser

Publications (3)

Publication Number Publication Date
SE0001815D0 SE0001815D0 (sv) 2000-05-17
SE0001815L true SE0001815L (sv) 2002-01-17
SE520109C2 SE520109C2 (sv) 2003-05-27

Family

ID=20279700

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0001815A SE520109C2 (sv) 2000-05-17 2000-05-17 Effekttransistorer för radiofrekvenser

Country Status (6)

Country Link
US (1) US6507047B2 (sv)
EP (1) EP1287559A1 (sv)
AU (1) AU2001260904A1 (sv)
SE (1) SE520109C2 (sv)
TW (1) TW469647B (sv)
WO (1) WO2001088980A1 (sv)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100413060C (zh) * 2003-09-04 2008-08-20 松下电器产业株式会社 半导体装置
US7829883B2 (en) * 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US20110068410A1 (en) * 2009-09-18 2011-03-24 Garnett Martin E Silicon die floorplan with application to high-voltage field effect transistors
CN102034823B (zh) * 2009-09-30 2013-01-02 意法半导体研发(深圳)有限公司 用于spu和stog良好性能的功率晶体管的布局和焊盘布图规划
US8519916B2 (en) * 2010-08-11 2013-08-27 Sarda Technologies, Inc. Low interconnect resistance integrated switches
US8896034B1 (en) 2010-08-11 2014-11-25 Sarda Technologies, Inc. Radio frequency and microwave devices and methods of use
US9236378B2 (en) 2010-08-11 2016-01-12 Sarda Technologies, Inc. Integrated switch devices
US9425262B2 (en) 2014-05-29 2016-08-23 Fairchild Semiconductor Corporation Configuration of portions of a power device within a silicon carbide crystal
CN104778307B (zh) * 2015-03-12 2017-08-25 浙江大学 基于GaAs PHEMT MMIC热仿真等效模型
US10134839B2 (en) * 2015-05-08 2018-11-20 Raytheon Company Field effect transistor structure having notched mesa
US9786660B1 (en) 2016-03-17 2017-10-10 Cree, Inc. Transistor with bypassed gate structure field
US9947616B2 (en) 2016-03-17 2018-04-17 Cree, Inc. High power MMIC devices having bypassed gate transistors
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
US9774322B1 (en) 2016-06-22 2017-09-26 Sarda Technologies, Inc. Gate driver for depletion-mode transistors
US10483352B1 (en) * 2018-07-11 2019-11-19 Cree, Inc. High power transistor with interior-fed gate fingers
US10763334B2 (en) 2018-07-11 2020-09-01 Cree, Inc. Drain and/or gate interconnect and finger structure
US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
US10770415B2 (en) 2018-12-04 2020-09-08 Cree, Inc. Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation
US11417746B2 (en) 2019-04-24 2022-08-16 Wolfspeed, Inc. High power transistor with interior-fed fingers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69007351T2 (de) * 1989-06-30 1994-09-08 Texas Instruments Inc Thermisch optimierter parallelgeschalteter Transistor.
US5319237A (en) * 1990-03-09 1994-06-07 Thomson Composants Microondes Power semiconductor component
US5270554A (en) 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5264713A (en) * 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5294814A (en) * 1992-06-09 1994-03-15 Kobe Steel Usa Vertical diamond field effect transistor
US5726463A (en) * 1992-08-07 1998-03-10 General Electric Company Silicon carbide MOSFET having self-aligned gate structure
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
FR2737342B1 (fr) 1995-07-25 1997-08-22 Thomson Csf Composant semiconducteur avec dissipateur thermique integre
US5801442A (en) 1996-07-22 1998-09-01 Northrop Grumman Corporation Microchannel cooling of high power semiconductor devices
JP3481813B2 (ja) * 1997-02-28 2003-12-22 Ｎｅｃ化合物デバイス株式会社 半導体装置

Also Published As

Publication number Publication date
AU2001260904A1 (en) 2001-11-26
SE520109C2 (sv) 2003-05-27
SE0001815D0 (sv) 2000-05-17
US20020014670A1 (en) 2002-02-07
US6507047B2 (en) 2003-01-14
WO2001088980A1 (en) 2001-11-22
EP1287559A1 (en) 2003-03-05
TW469647B (en) 2001-12-21

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