ES8404111A1 - Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado. - Google Patents
Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado.Info
- Publication number
- ES8404111A1 ES8404111A1 ES521503A ES521503A ES8404111A1 ES 8404111 A1 ES8404111 A1 ES 8404111A1 ES 521503 A ES521503 A ES 521503A ES 521503 A ES521503 A ES 521503A ES 8404111 A1 ES8404111 A1 ES 8404111A1
- Authority
- ES
- Spain
- Prior art keywords
- contacts
- external
- internal
- central region
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003491 array Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
UNIDAD DE BASE PARA CONJUNTOS DE COMPUERTAS LOGICAS DE CIRCUITO INTEGRADO.CONSTA DE DOS TRANSISTORES DE EFECTO DE CAMPO DE TIPO Y Y DE DOS TRANSISTORES DE EFECTO DE CAMPO DE TIPO N, REALIZADOS DE MANERA QUE LOS TRANSISTORES DE UN MISMO TIPO TENGAN EN COMUN UNO DE LOS ELECTRODOS PUESTOS EN LAS EXTREMIDADES DEL CANAL. LAS PUERTAS DE UN TRANSISTOR DE TIPO P Y DE UN TRANSISTOR DE TIPO N, SIMETRICOS RESPECTO DE UN PUNTO CENTRAL DE LA UNIDAD, ESTAN CONECTADAS POR UNA PRIMERA INTERCONEXION DE POLISILICIO QUE ATRAVIESA DOS METALIZACIONES PARALELAS RELATIVAS A LAS ALIMENTACIONES,SIENDO ESTAS METALIZACIONES ATRAVESADAS TAMBIEN POR UNA SEGUNDA INTERCONEXION DE POLISILICIO QUE UNE AREAS DISPUESTAS EN LOS LADOS OPUESTOS DE UNA ZONA DELIMITADA POR LAS ALIMENTACIONES.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT67501/82A IT1191188B (it) | 1982-04-15 | 1982-04-15 | Cella elementare per reti di porte logiche a circuito integrato |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8404111A1 true ES8404111A1 (es) | 1984-04-01 |
ES521503A0 ES521503A0 (es) | 1984-04-01 |
Family
ID=11302946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES521503A Granted ES521503A0 (es) | 1982-04-15 | 1983-04-15 | Perfeccionamientos en una unidad de base para conjuntos de compuertas logicas de circuito integrado. |
Country Status (10)
Country | Link |
---|---|
US (1) | US4595940A (es) |
EP (1) | EP0092176B1 (es) |
JP (1) | JPS59938A (es) |
AT (1) | ATE36207T1 (es) |
CA (1) | CA1187624A (es) |
DE (2) | DE92176T1 (es) |
DK (1) | DK162867C (es) |
ES (1) | ES521503A0 (es) |
IT (1) | IT1191188B (es) |
NO (1) | NO164947C (es) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783749A (en) * | 1985-05-21 | 1988-11-08 | Siemens Aktiengesellschaft | Basic cell realized in the CMOS technique and a method for the automatic generation of such a basic cell |
DE4002780C2 (de) * | 1990-01-31 | 1995-01-19 | Fraunhofer Ges Forschung | Basiszelle für eine kanallose Gate-Array-Anordnung |
US5291043A (en) * | 1990-02-07 | 1994-03-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device having gate array |
US6399972B1 (en) * | 2000-03-13 | 2002-06-04 | Oki Electric Industry Co., Ltd. | Cell based integrated circuit and unit cell architecture therefor |
JP2011242541A (ja) * | 2010-05-17 | 2011-12-01 | Panasonic Corp | 半導体集積回路装置、および標準セルの端子構造 |
CA3122203A1 (en) | 2010-12-20 | 2012-06-28 | The Nielsen Company (Us), Llc | Methods and apparatus to determine media impressions using distributed demographic information |
AU2013204865B2 (en) | 2012-06-11 | 2015-07-09 | The Nielsen Company (Us), Llc | Methods and apparatus to share online media impressions data |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1440512A (en) * | 1973-04-30 | 1976-06-23 | Rca Corp | Universal array using complementary transistors |
JPS5925381B2 (ja) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | 半導体集積回路装置 |
US4356504A (en) * | 1980-03-28 | 1982-10-26 | International Microcircuits, Inc. | MOS Integrated circuit structure for discretionary interconnection |
JPS5749253A (en) * | 1980-09-09 | 1982-03-23 | Toshiba Corp | Semiconductor integrated circuit |
-
1982
- 1982-04-15 IT IT67501/82A patent/IT1191188B/it active
-
1983
- 1983-04-05 JP JP58058808A patent/JPS59938A/ja active Granted
- 1983-04-11 DK DK158383A patent/DK162867C/da not_active IP Right Cessation
- 1983-04-11 CA CA000425602A patent/CA1187624A/en not_active Expired
- 1983-04-14 AT AT83103612T patent/ATE36207T1/de not_active IP Right Cessation
- 1983-04-14 EP EP83103612A patent/EP0092176B1/en not_active Expired
- 1983-04-14 DE DE198383103612T patent/DE92176T1/de active Pending
- 1983-04-14 NO NO831320A patent/NO164947C/no unknown
- 1983-04-14 DE DE8383103612T patent/DE3377603D1/de not_active Expired
- 1983-04-15 US US06/485,170 patent/US4595940A/en not_active Expired - Fee Related
- 1983-04-15 ES ES521503A patent/ES521503A0/es active Granted
Also Published As
Publication number | Publication date |
---|---|
ATE36207T1 (de) | 1988-08-15 |
JPH0254670B2 (es) | 1990-11-22 |
IT8267501A0 (it) | 1982-04-15 |
JPS59938A (ja) | 1984-01-06 |
DE92176T1 (de) | 1985-10-24 |
US4595940A (en) | 1986-06-17 |
ES521503A0 (es) | 1984-04-01 |
NO164947B (no) | 1990-08-20 |
NO164947C (no) | 1990-11-28 |
EP0092176B1 (en) | 1988-08-03 |
NO831320L (no) | 1983-10-17 |
DE3377603D1 (en) | 1988-09-08 |
DK158383A (da) | 1983-10-16 |
IT1191188B (it) | 1988-02-24 |
DK162867B (da) | 1991-12-16 |
EP0092176A2 (en) | 1983-10-26 |
DK162867C (da) | 1992-05-04 |
DK158383D0 (da) | 1983-04-11 |
CA1187624A (en) | 1985-05-21 |
EP0092176A3 (en) | 1985-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19991108 |