RU2579597C2 - Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы - Google Patents
Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы Download PDFInfo
- Publication number
- RU2579597C2 RU2579597C2 RU2012123720/05A RU2012123720A RU2579597C2 RU 2579597 C2 RU2579597 C2 RU 2579597C2 RU 2012123720/05 A RU2012123720/05 A RU 2012123720/05A RU 2012123720 A RU2012123720 A RU 2012123720A RU 2579597 C2 RU2579597 C2 RU 2579597C2
- Authority
- RU
- Russia
- Prior art keywords
- composition
- polymer particles
- cmp
- particles
- inorganic particles
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26087309P | 2009-11-13 | 2009-11-13 | |
| US61/260,873 | 2009-11-13 | ||
| PCT/IB2010/055101 WO2011058503A1 (en) | 2009-11-13 | 2010-11-10 | A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2012123720A RU2012123720A (ru) | 2013-12-20 |
| RU2579597C2 true RU2579597C2 (ru) | 2016-04-10 |
Family
ID=43991260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2012123720/05A RU2579597C2 (ru) | 2009-11-13 | 2010-11-10 | Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US9255214B2 (https=) |
| EP (1) | EP2499210B1 (https=) |
| JP (1) | JP6005516B2 (https=) |
| KR (1) | KR101809762B1 (https=) |
| CN (1) | CN102597142B (https=) |
| IL (1) | IL219144A (https=) |
| MY (1) | MY161863A (https=) |
| RU (1) | RU2579597C2 (https=) |
| SG (1) | SG10201407348PA (https=) |
| TW (1) | TWI500722B (https=) |
| WO (1) | WO2011058503A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5574702B2 (ja) * | 2009-12-28 | 2014-08-20 | 日揮触媒化成株式会社 | 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法 |
| KR101848519B1 (ko) | 2010-02-24 | 2018-04-12 | 바스프 에스이 | 수성 연마제 및 그라프트 공중합체 및 패턴화되고 비구조화된 금속 표면의 연마 방법에서 이들의 용도 |
| KR101907860B1 (ko) | 2010-10-07 | 2018-10-15 | 바스프 에스이 | 수성 연마 조성물 및 패턴화 또는 비패턴화 저-k 유전층을 갖는 기판의 화학적 기계적 연마 방법 |
| EP2649144A4 (en) | 2010-12-10 | 2014-05-14 | Basf Se | AQUEOUS POLISHING COMPOSITION AND METHOD FOR THE CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES WITH DIELECTRIC SILICON OXIDE AND POLYSILICIUM FILMS |
| CN103764775B (zh) | 2011-09-07 | 2016-05-18 | 巴斯夫欧洲公司 | 包含苷的化学机械抛光(cmp)组合物 |
| EP2776518B1 (en) | 2011-11-10 | 2015-08-12 | Basf Se | Paper coating slip additive comprising acid monomer, associative monomer and nonionic monomer |
| EP2682441A1 (en) * | 2012-07-06 | 2014-01-08 | Basf Se | A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group |
| US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
| CN107406752B (zh) * | 2015-03-10 | 2020-05-08 | 日立化成株式会社 | 研磨剂、研磨剂用储存液和研磨方法 |
| KR20170030143A (ko) * | 2015-09-08 | 2017-03-17 | 삼성에스디아이 주식회사 | 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
| KR102524807B1 (ko) | 2016-11-04 | 2023-04-25 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| KR102782008B1 (ko) * | 2019-12-06 | 2025-03-18 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2178599C2 (ru) * | 1996-09-30 | 2002-01-20 | Хитачи Кемикал Кампани, Лтд. | Абразив из оксида церия и способ полирования подложек |
| US6447373B1 (en) * | 1999-07-03 | 2002-09-10 | Rodel Holdings Inc. | Chemical mechanical polishing slurries for metal |
| US6559056B2 (en) * | 2000-05-18 | 2003-05-06 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing |
| US20040152309A1 (en) * | 2003-02-03 | 2004-08-05 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| RU2235747C2 (ru) * | 1999-10-06 | 2004-09-10 | Сент-Гобэн Керамикс Энд Пластикс, Инк. | Способ химико-механической планаризации и полученные с его помощью изделия |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| DE19719503C2 (de) | 1997-05-07 | 2002-05-02 | Wolters Peter Werkzeugmasch | Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung |
| DE19755975A1 (de) | 1997-12-16 | 1999-06-17 | Wolters Peter Werkzeugmasch | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
| EP1036836B1 (en) | 1999-03-18 | 2004-11-03 | Kabushiki Kaisha Toshiba | Aqueous dispersion for chemical mechanical polishing |
| TW534917B (en) * | 1999-11-22 | 2003-06-01 | Jsr Corp | Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and its method of production |
| JP4151179B2 (ja) * | 1999-11-22 | 2008-09-17 | Jsr株式会社 | 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体 |
| DE10062496B4 (de) | 2000-12-14 | 2005-03-17 | Peter Wolters Cmp - Systeme Gmbh & Co. Kg | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
| US20040065021A1 (en) * | 2002-10-04 | 2004-04-08 | Yasuhiro Yoneda | Polishing composition |
| JP4187206B2 (ja) * | 2002-10-04 | 2008-11-26 | 花王株式会社 | 研磨液組成物 |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| JP2006041252A (ja) | 2004-07-28 | 2006-02-09 | Hitachi Chem Co Ltd | Cmp研磨剤、その製造方法及び基板の研磨方法 |
| US7207871B1 (en) | 2005-10-06 | 2007-04-24 | Applied Materials, Inc. | Carrier head with multiple chambers |
| KR100832993B1 (ko) * | 2006-04-14 | 2008-05-27 | 주식회사 엘지화학 | Cmp 슬러리용 보조제 |
| EP2291413B1 (de) | 2008-06-17 | 2012-11-14 | Basf Se | Verfahren zur herstellung einer wässrigen polymerisatdispersion |
| KR101686255B1 (ko) | 2008-10-03 | 2016-12-13 | 바스프 에스이 | 향상된 성능의 화학적 기계적 연마(cmp) 연마 용액 |
| US8679980B2 (en) | 2009-05-06 | 2014-03-25 | Basf Se | Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process |
| US8747687B2 (en) | 2009-05-06 | 2014-06-10 | Basf Se | Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces |
| WO2010128094A1 (en) | 2009-05-08 | 2010-11-11 | Basf Se | Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization |
| US20120077419A1 (en) | 2009-06-05 | 2012-03-29 | Basf Se | Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp) |
-
2010
- 2010-11-10 KR KR1020127014055A patent/KR101809762B1/ko not_active Expired - Fee Related
- 2010-11-10 WO PCT/IB2010/055101 patent/WO2011058503A1/en not_active Ceased
- 2010-11-10 EP EP10829604.7A patent/EP2499210B1/en not_active Not-in-force
- 2010-11-10 SG SG10201407348PA patent/SG10201407348PA/en unknown
- 2010-11-10 MY MYPI2012001715A patent/MY161863A/en unknown
- 2010-11-10 RU RU2012123720/05A patent/RU2579597C2/ru not_active IP Right Cessation
- 2010-11-10 US US13/503,753 patent/US9255214B2/en not_active Expired - Fee Related
- 2010-11-10 CN CN201080050637.1A patent/CN102597142B/zh not_active Expired - Fee Related
- 2010-11-10 JP JP2012538454A patent/JP6005516B2/ja not_active Expired - Fee Related
- 2010-11-12 TW TW099138908A patent/TWI500722B/zh not_active IP Right Cessation
-
2012
- 2012-04-15 IL IL219144A patent/IL219144A/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2178599C2 (ru) * | 1996-09-30 | 2002-01-20 | Хитачи Кемикал Кампани, Лтд. | Абразив из оксида церия и способ полирования подложек |
| US6447373B1 (en) * | 1999-07-03 | 2002-09-10 | Rodel Holdings Inc. | Chemical mechanical polishing slurries for metal |
| RU2235747C2 (ru) * | 1999-10-06 | 2004-09-10 | Сент-Гобэн Керамикс Энд Пластикс, Инк. | Способ химико-механической планаризации и полученные с его помощью изделия |
| US6559056B2 (en) * | 2000-05-18 | 2003-05-06 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing |
| US20040152309A1 (en) * | 2003-02-03 | 2004-08-05 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6005516B2 (ja) | 2016-10-12 |
| US20120208344A1 (en) | 2012-08-16 |
| EP2499210A1 (en) | 2012-09-19 |
| US9255214B2 (en) | 2016-02-09 |
| IL219144A (en) | 2016-07-31 |
| RU2012123720A (ru) | 2013-12-20 |
| CN102597142A (zh) | 2012-07-18 |
| CN102597142B (zh) | 2014-09-17 |
| TW201122068A (en) | 2011-07-01 |
| EP2499210B1 (en) | 2017-01-11 |
| KR101809762B1 (ko) | 2017-12-15 |
| WO2011058503A1 (en) | 2011-05-19 |
| TWI500722B (zh) | 2015-09-21 |
| EP2499210A4 (en) | 2015-04-29 |
| JP2013511144A (ja) | 2013-03-28 |
| KR20120101044A (ko) | 2012-09-12 |
| IL219144A0 (en) | 2012-06-28 |
| SG10201407348PA (en) | 2015-01-29 |
| MY161863A (en) | 2017-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU2579597C2 (ru) | Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы | |
| CN104081501B (zh) | 包含蛋白质的化学机械抛光(cmp)组合物 | |
| US9157012B2 (en) | Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a CMP composition comprising anionic phosphate or phosphonate | |
| US9487675B2 (en) | Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives | |
| CN103717351A (zh) | 一种制造半导体装置的方法,其包括在具有3.0至5.5的pH值的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex 材料 | |
| WO2008010499A1 (en) | Aqueous dispersion for chemical mechanical polishing, method for producing the same, and chemical mechanical polishing method | |
| TW201538700A (zh) | 包含多胺基酸之化學機械拋光(cmp)組成物 | |
| TWI358419B (en) | Polyoxometalate compositions and methods | |
| CN104364331A (zh) | 包括在包含特定非离子表面活性剂的化学机械抛光组合物存在下进行iii-v族材料的化学机械抛光的制造半导体装置的方法 | |
| US20150099361A1 (en) | Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle | |
| JP2005353681A (ja) | 半導体絶縁膜用cmp研磨剤、その製造方法及び基板の研磨方法 | |
| EP2662885A1 (en) | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle | |
| US8927429B2 (en) | Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid | |
| WO2025115883A1 (ja) | 研磨組成物 | |
| TW201700706A (zh) | 用於高效率拋光含鍺基材的化學機械拋光(cmp)組成物 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20191111 |