RU2579597C2 - Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы - Google Patents

Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы Download PDF

Info

Publication number
RU2579597C2
RU2579597C2 RU2012123720/05A RU2012123720A RU2579597C2 RU 2579597 C2 RU2579597 C2 RU 2579597C2 RU 2012123720/05 A RU2012123720/05 A RU 2012123720/05A RU 2012123720 A RU2012123720 A RU 2012123720A RU 2579597 C2 RU2579597 C2 RU 2579597C2
Authority
RU
Russia
Prior art keywords
composition
polymer particles
cmp
particles
inorganic particles
Prior art date
Application number
RU2012123720/05A
Other languages
English (en)
Russian (ru)
Other versions
RU2012123720A (ru
Inventor
Михаэль ЛАУТЕР
Виджай Иммануэль РАМАН
Южуо ЛИ
Шиям Сундар ВЕНКАТАРАМАН
Даниэль Кво-Хунг ШЕН
Original Assignee
Басф Се
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Басф Се filed Critical Басф Се
Publication of RU2012123720A publication Critical patent/RU2012123720A/ru
Application granted granted Critical
Publication of RU2579597C2 publication Critical patent/RU2579597C2/ru

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
RU2012123720/05A 2009-11-13 2010-11-10 Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы RU2579597C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26087309P 2009-11-13 2009-11-13
US61/260,873 2009-11-13
PCT/IB2010/055101 WO2011058503A1 (en) 2009-11-13 2010-11-10 A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles

Publications (2)

Publication Number Publication Date
RU2012123720A RU2012123720A (ru) 2013-12-20
RU2579597C2 true RU2579597C2 (ru) 2016-04-10

Family

ID=43991260

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2012123720/05A RU2579597C2 (ru) 2009-11-13 2010-11-10 Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы

Country Status (11)

Country Link
US (1) US9255214B2 (https=)
EP (1) EP2499210B1 (https=)
JP (1) JP6005516B2 (https=)
KR (1) KR101809762B1 (https=)
CN (1) CN102597142B (https=)
IL (1) IL219144A (https=)
MY (1) MY161863A (https=)
RU (1) RU2579597C2 (https=)
SG (1) SG10201407348PA (https=)
TW (1) TWI500722B (https=)
WO (1) WO2011058503A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5574702B2 (ja) * 2009-12-28 2014-08-20 日揮触媒化成株式会社 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法
KR101848519B1 (ko) 2010-02-24 2018-04-12 바스프 에스이 수성 연마제 및 그라프트 공중합체 및 패턴화되고 비구조화된 금속 표면의 연마 방법에서 이들의 용도
KR101907860B1 (ko) 2010-10-07 2018-10-15 바스프 에스이 수성 연마 조성물 및 패턴화 또는 비패턴화 저-k 유전층을 갖는 기판의 화학적 기계적 연마 방법
EP2649144A4 (en) 2010-12-10 2014-05-14 Basf Se AQUEOUS POLISHING COMPOSITION AND METHOD FOR THE CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES WITH DIELECTRIC SILICON OXIDE AND POLYSILICIUM FILMS
CN103764775B (zh) 2011-09-07 2016-05-18 巴斯夫欧洲公司 包含苷的化学机械抛光(cmp)组合物
EP2776518B1 (en) 2011-11-10 2015-08-12 Basf Se Paper coating slip additive comprising acid monomer, associative monomer and nonionic monomer
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
CN107406752B (zh) * 2015-03-10 2020-05-08 日立化成株式会社 研磨剂、研磨剂用储存液和研磨方法
KR20170030143A (ko) * 2015-09-08 2017-03-17 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR102524807B1 (ko) 2016-11-04 2023-04-25 삼성전자주식회사 반도체 소자의 제조 방법
KR102782008B1 (ko) * 2019-12-06 2025-03-18 주식회사 케이씨텍 고단차 연마용 슬러리 조성물

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2178599C2 (ru) * 1996-09-30 2002-01-20 Хитачи Кемикал Кампани, Лтд. Абразив из оксида церия и способ полирования подложек
US6447373B1 (en) * 1999-07-03 2002-09-10 Rodel Holdings Inc. Chemical mechanical polishing slurries for metal
US6559056B2 (en) * 2000-05-18 2003-05-06 Jsr Corporation Aqueous dispersion for chemical mechanical polishing
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
RU2235747C2 (ru) * 1999-10-06 2004-09-10 Сент-Гобэн Керамикс Энд Пластикс, Инк. Способ химико-механической планаризации и полученные с его помощью изделия

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
DE19719503C2 (de) 1997-05-07 2002-05-02 Wolters Peter Werkzeugmasch Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung
DE19755975A1 (de) 1997-12-16 1999-06-17 Wolters Peter Werkzeugmasch Halter für flache Werkstücke, insbesondere Halbleiterwafer
EP1036836B1 (en) 1999-03-18 2004-11-03 Kabushiki Kaisha Toshiba Aqueous dispersion for chemical mechanical polishing
TW534917B (en) * 1999-11-22 2003-06-01 Jsr Corp Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and its method of production
JP4151179B2 (ja) * 1999-11-22 2008-09-17 Jsr株式会社 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体
DE10062496B4 (de) 2000-12-14 2005-03-17 Peter Wolters Cmp - Systeme Gmbh & Co. Kg Halter für flache Werkstücke, insbesondere Halbleiterwafer
US20040065021A1 (en) * 2002-10-04 2004-04-08 Yasuhiro Yoneda Polishing composition
JP4187206B2 (ja) * 2002-10-04 2008-11-26 花王株式会社 研磨液組成物
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
JP2006041252A (ja) 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Cmp研磨剤、その製造方法及び基板の研磨方法
US7207871B1 (en) 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
KR100832993B1 (ko) * 2006-04-14 2008-05-27 주식회사 엘지화학 Cmp 슬러리용 보조제
EP2291413B1 (de) 2008-06-17 2012-11-14 Basf Se Verfahren zur herstellung einer wässrigen polymerisatdispersion
KR101686255B1 (ko) 2008-10-03 2016-12-13 바스프 에스이 향상된 성능의 화학적 기계적 연마(cmp) 연마 용액
US8679980B2 (en) 2009-05-06 2014-03-25 Basf Se Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process
US8747687B2 (en) 2009-05-06 2014-06-10 Basf Se Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
WO2010128094A1 (en) 2009-05-08 2010-11-11 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
US20120077419A1 (en) 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2178599C2 (ru) * 1996-09-30 2002-01-20 Хитачи Кемикал Кампани, Лтд. Абразив из оксида церия и способ полирования подложек
US6447373B1 (en) * 1999-07-03 2002-09-10 Rodel Holdings Inc. Chemical mechanical polishing slurries for metal
RU2235747C2 (ru) * 1999-10-06 2004-09-10 Сент-Гобэн Керамикс Энд Пластикс, Инк. Способ химико-механической планаризации и полученные с его помощью изделия
US6559056B2 (en) * 2000-05-18 2003-05-06 Jsr Corporation Aqueous dispersion for chemical mechanical polishing
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Also Published As

Publication number Publication date
JP6005516B2 (ja) 2016-10-12
US20120208344A1 (en) 2012-08-16
EP2499210A1 (en) 2012-09-19
US9255214B2 (en) 2016-02-09
IL219144A (en) 2016-07-31
RU2012123720A (ru) 2013-12-20
CN102597142A (zh) 2012-07-18
CN102597142B (zh) 2014-09-17
TW201122068A (en) 2011-07-01
EP2499210B1 (en) 2017-01-11
KR101809762B1 (ko) 2017-12-15
WO2011058503A1 (en) 2011-05-19
TWI500722B (zh) 2015-09-21
EP2499210A4 (en) 2015-04-29
JP2013511144A (ja) 2013-03-28
KR20120101044A (ko) 2012-09-12
IL219144A0 (en) 2012-06-28
SG10201407348PA (en) 2015-01-29
MY161863A (en) 2017-05-15

Similar Documents

Publication Publication Date Title
RU2579597C2 (ru) Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы
CN104081501B (zh) 包含蛋白质的化学机械抛光(cmp)组合物
US9157012B2 (en) Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a CMP composition comprising anionic phosphate or phosphonate
US9487675B2 (en) Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives
CN103717351A (zh) 一种制造半导体装置的方法,其包括在具有3.0至5.5的pH值的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex 材料
WO2008010499A1 (en) Aqueous dispersion for chemical mechanical polishing, method for producing the same, and chemical mechanical polishing method
TW201538700A (zh) 包含多胺基酸之化學機械拋光(cmp)組成物
TWI358419B (en) Polyoxometalate compositions and methods
CN104364331A (zh) 包括在包含特定非离子表面活性剂的化学机械抛光组合物存在下进行iii-v族材料的化学机械抛光的制造半导体装置的方法
US20150099361A1 (en) Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
JP2005353681A (ja) 半導体絶縁膜用cmp研磨剤、その製造方法及び基板の研磨方法
EP2662885A1 (en) A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
US8927429B2 (en) Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid
WO2025115883A1 (ja) 研磨組成物
TW201700706A (zh) 用於高效率拋光含鍺基材的化學機械拋光(cmp)組成物

Legal Events

Date Code Title Description
MM4A The patent is invalid due to non-payment of fees

Effective date: 20191111