TWI500722B - 包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物 - Google Patents

包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物 Download PDF

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Publication number
TWI500722B
TWI500722B TW099138908A TW99138908A TWI500722B TW I500722 B TWI500722 B TW I500722B TW 099138908 A TW099138908 A TW 099138908A TW 99138908 A TW99138908 A TW 99138908A TW I500722 B TWI500722 B TW I500722B
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TW
Taiwan
Prior art keywords
cmp
cmp composition
polymer particles
particles
liquid medium
Prior art date
Application number
TW099138908A
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English (en)
Chinese (zh)
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TW201122068A (en
Inventor
米夏埃爾 勞特
維傑 伊曼紐 拉曼
李玉琢
徐安 桑達 帆卡塔拉曼
沈國宏
Original Assignee
巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴斯夫歐洲公司 filed Critical 巴斯夫歐洲公司
Publication of TW201122068A publication Critical patent/TW201122068A/zh
Application granted granted Critical
Publication of TWI500722B publication Critical patent/TWI500722B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW099138908A 2009-11-13 2010-11-12 包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物 TWI500722B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26087309P 2009-11-13 2009-11-13

Publications (2)

Publication Number Publication Date
TW201122068A TW201122068A (en) 2011-07-01
TWI500722B true TWI500722B (zh) 2015-09-21

Family

ID=43991260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099138908A TWI500722B (zh) 2009-11-13 2010-11-12 包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物

Country Status (11)

Country Link
US (1) US9255214B2 (https=)
EP (1) EP2499210B1 (https=)
JP (1) JP6005516B2 (https=)
KR (1) KR101809762B1 (https=)
CN (1) CN102597142B (https=)
IL (1) IL219144A (https=)
MY (1) MY161863A (https=)
RU (1) RU2579597C2 (https=)
SG (1) SG10201407348PA (https=)
TW (1) TWI500722B (https=)
WO (1) WO2011058503A1 (https=)

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JP5574702B2 (ja) * 2009-12-28 2014-08-20 日揮触媒化成株式会社 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法
KR101848519B1 (ko) 2010-02-24 2018-04-12 바스프 에스이 수성 연마제 및 그라프트 공중합체 및 패턴화되고 비구조화된 금속 표면의 연마 방법에서 이들의 용도
KR101907860B1 (ko) 2010-10-07 2018-10-15 바스프 에스이 수성 연마 조성물 및 패턴화 또는 비패턴화 저-ｋ 유전층을 갖는 기판의 화학적 기계적 연마 방법
EP2649144A4 (en) 2010-12-10 2014-05-14 Basf Se AQUEOUS POLISHING COMPOSITION AND METHOD FOR THE CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES WITH DIELECTRIC SILICON OXIDE AND POLYSILICIUM FILMS
CN103764775B (zh) 2011-09-07 2016-05-18 巴斯夫欧洲公司 包含苷的化学机械抛光(cmp)组合物
EP2776518B1 (en) 2011-11-10 2015-08-12 Basf Se Paper coating slip additive comprising acid monomer, associative monomer and nonionic monomer
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
CN107406752B (zh) * 2015-03-10 2020-05-08 日立化成株式会社 研磨剂、研磨剂用储存液和研磨方法
KR20170030143A (ko) * 2015-09-08 2017-03-17 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR102524807B1 (ko) 2016-11-04 2023-04-25 삼성전자주식회사 반도체 소자의 제조 방법
KR102782008B1 (ko) * 2019-12-06 2025-03-18 주식회사 케이씨텍 고단차 연마용 슬러리 조성물

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CN101415525A (zh) * 2006-04-14 2009-04-22 Lg化学株式会社 Cmp浆料的辅助剂

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US8679980B2 (en) 2009-05-06 2014-03-25 Basf Se Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process
US8747687B2 (en) 2009-05-06 2014-06-10 Basf Se Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
WO2010128094A1 (en) 2009-05-08 2010-11-11 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
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Publication number Priority date Publication date Assignee Title
JP2006041252A (ja) * 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法
CN101415525A (zh) * 2006-04-14 2009-04-22 Lg化学株式会社 Cmp浆料的辅助剂

Also Published As

Publication number Publication date
JP6005516B2 (ja) 2016-10-12
US20120208344A1 (en) 2012-08-16
EP2499210A1 (en) 2012-09-19
US9255214B2 (en) 2016-02-09
RU2579597C2 (ru) 2016-04-10
IL219144A (en) 2016-07-31
RU2012123720A (ru) 2013-12-20
CN102597142A (zh) 2012-07-18
CN102597142B (zh) 2014-09-17
TW201122068A (en) 2011-07-01
EP2499210B1 (en) 2017-01-11
KR101809762B1 (ko) 2017-12-15
WO2011058503A1 (en) 2011-05-19
EP2499210A4 (en) 2015-04-29
JP2013511144A (ja) 2013-03-28
KR20120101044A (ko) 2012-09-12
IL219144A0 (en) 2012-06-28
SG10201407348PA (en) 2015-01-29
MY161863A (en) 2017-05-15

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