RU2018136792A - Способ формирования соединения в бинарной системе и соединение, полученное таким способом - Google Patents
Способ формирования соединения в бинарной системе и соединение, полученное таким способом Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
- B23K20/026—Thermo-compression bonding with diffusion of soldering material
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
- B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Claims (62)
1. Способ формирования соединения между поверхностью сопряжения первого твердого объекта и поверхностью сопряжения второго твердого объекта, содержащий этапы, на которых:
А) обеспечивают бинарную систему компонентов А и В, которая представляет собой любое из следующего:
i) смешиваемую бинарную систему, которая имеет общий состав С0 в диапазоне:
С0 = Cliq -fα(Cliq - Cα)
где
Cliq - содержание жидкой фазы, существующей совместно с однофазным твердым раствором, когда бинарная система находится при температуре Т1 = (Tliq,A + Tliq,B)/2,
Cα - содержание однофазного твердого раствора, существующего совместно с жидкой фазой, когда бинарная система находится при температуре Т1,
Тliq,A - температура плавления 100% чистого компонента А,
Tliq,B - температура плавления 100% чистого компонента В, и fα - доля однофазного твердого раствора, которая присутствует в смешиваемой бинарной системе при температуре T1, причем fα находится в интервале [0,26; 1); или
ii) частично смешиваемую бинарную систему или доэвтектического, или заэвтектического состава, содержащую в области твердого состояния только три фазовых поля,
при этом, если состав частично смешиваемой бинарной системы является доэвтектическим, то система имеет общий состав С0 в диапазоне:
С0 = Cliq -fα(Cliq - Cα),
где
Cliq - содержание жидкой фазы, существующей совместно с α-фазой, когда бинарная система находится при температуре T1 =(Tliq,A + Teut)/2,
Сα - содержание α-фазы, существующей совместно с жидкой фазой, когда бинарная система находится при температуре T1= (Тliq,A +Teut)/2,
Tliq,A - температура плавления 100% чистого компонента А,
Teut - температура эвтектической точки эвтектической бинарной системы, и fα находится в интервале [0,26; 1),
или, если состав частично смешиваемой бинарной системы является заэвтектическим, то система имеет общий состав С0 в диапазоне:
С0 = fβ(Cβ - Сliq)+ Cliq,
где
Cliq - содержание жидкой фазы, которая существует совместно с β-фазой, когда бинарная система находится при температуре T1=(Тliq,B+ Teut)/2,
Сβ - содержание β-фазы, существующей совместно с жидкой фазой, когда бинарная система находится при температуре = (Tliq,B +Teut)/2,
Tliq,B - температура плавления 100% чистого компонента В,
Teut - температура эвтектической точки эвтектической бинарной системы, и fβ находится в интервале [0,26; 1);
B) формируют многослойную структуру, содержащую первый твердый объект, бинарную систему и второй твердый объект, обращая при этом поверхность сопряжения второго твердого объекта к поверхности сопряжения первого твердого объекта, при этом бинарную систему помещают между поверхностями сопряжения первого и второго объектов и приводят в контакт с поверхностями сопряжения первого и второго объектов, и
C) формируют соединение, связывающее первый и второй объекты, путем термообработки многослойной структуры при температуре, которая сверху ограничена температурой что вынуждает смешиваемую или частично смешиваемую бинарную систему компонентов А и В образовать пористую, когерентную и сплошную структуру однофазного твердого раствора компонентов А и В, расположенную между поверхностями сопряжения первого и второго объектов, и вторую фазу компонентов А и В, распределенную в пористой, когерентной и сплошной структуре однофазного твердого раствора компонентов А и В.
2. Способ по п. 1, отличающийся тем, что fα находится в одном из следующих интервалов: [0,30; 1); [0,36; 1); [0,42; 1); [0,48; 1); [0,54; 1); [0,60; 1); [0,66; 1); [0,72; 1); [0,78; 1); [0,84; 1); [0,90; 1); [0,95; 1); [0,26; 0,99]; [0,30; 0,98]; [0,36; 0,97]; [0,42; 0,96]; [0,48; 0,95]; [0,52; 0,94]; [0,58; 0,93]; [0,64; 0,92]; [0,72; 0,91]; [0,95; 0,99]; или [0,80; 0,90].
3. Способ по п. 1, отличающийся тем, что fβ находится в одном из следующих интервалов: [0,30; 1); [0,36; 1); [0,42; 1); [0,48; 1); [0,54; 1); [0,60; 1); [0,66; 1); [0,72; 1); [0,78; 1); [0,84; 1); [0,90; 1); [0,95; 1); [0,26; 0,99]; [0,30; 0,98]; [0,36; 0,97]; [0,42; 0,96]; [0,48; 0,95]; [0,52; 0,94]; [0,58; 0,93]; [0,64; 0,92]; [0,72; 0,91]; [0,95; 0,99]; или [0,80; 0,90].
4. Способ по любому из предшествующих пунктов, отличающийся тем, что бинарная система представляет собой химическую или физическую смесь компонента А и компонента В, выбранную из следующих вариантов: Ge-Si, Мо-W, Nb-W, V-W, Ag-Bi, Ag-Cu, Ag-Ge, Ag-Mo, Ag-Pb, Ag-Si, Ag-Ti, Al-Be, Al-Bi, Al-Ga, Al-Ge, Al-N, Al-Sn, Au-Bi, Au-Ge, Au-Mo, Au-Sb, Au-Si, Au-W, Bi-Cu, Bi-Ge, Bi-Ni, Bi-Sn, Cr-Sn, Cu-Si, Fe-ln, Ga-Ge, Ga-Si, Ga-Zn, Ge-ln, Ge-Pb, Ge-Sb, Ge-Sn, Ge-Zn, ln-Si, ln-Zn, Pb-W, Pd-W, Sb-Si, Si-Sn, Si-Zn, Sn-Zn, или SiO2-Al2O3.
5. Способ по п. 4, отличающийся тем, что бинарная система представляет собой химическую или физическую смесь компонента А и компонента В, выбранную из следующих вариантов: Al-Ge, Al-Sn, Au-Ge, Au-Si, Bi-Cu, Bi-Ge, Bi-Sn, Ga-Ge, Ge-ln, ln-Si, или Si-Sn.
6. Способ по любому из предшествующих пунктов, отличающийся тем, что термообработку многослойной структуры выполняют при температуре, которая лежит в одном из следующих интервалов: [0,5⋅TS; T1], [0,7⋅TS; T1], [0,75⋅TS; T1], [0,8⋅TS; T1], [0,85⋅TS; T1], [0,9⋅TS; T1], или [0,95⋅TS; T1], где TS - температура солидуса для бинарной системы с составом С0.
7. Способ по любому из пп. 1-5, отличающийся тем, что термообработка включает начальное нагревание бинарной системы до температуры в интервале от Tsol до T1 где Тsol - температура солидуса бинарной системы при общем составе С0, поддержание этой температуры в течение нескольких минут, последующее охлаждение бинарной системы до температуры в интервале от 0.8⋅Tsol до Tsol и поддержание этой температуры в течение нескольких часов.
8. Способ по п. 7, отличающийся тем, что температуру в интервале от 0.8⋅Tsol до Tsol поддерживают в течение 2-10 часов, предпочтительно 3-6 часов, а более предпочтительно 3-4 часов.
9. Соединение между поверхностью сопряжения первого твердого объекта и поверхностью сопряжения второго твердого объекта, отличающееся тем, что
соединение содержит связующий слой, выполненный из бинарной системы компонентов А и В, которая представляет собой любое из следующего:
i) полностью смешиваемую бинарную систему, которая имеет общий состав С0 в диапазоне: С0 = Cliq - fα(Cliq - Cα)
где
Cliq - содержание жидкой фазы, существующей совместно с однофазным твердым раствором, когда бинарная система находится при температуре T1 = (Тliq,A + Tliq,B)/2,
Сα - содержание однофазного твердого раствора, существующего совместно с жидкой фазой, когда бинарная система находится при температуре,
Tliq,A - температура ликвидуса 100% чистого компонента А,
Tliq,B - температура ликвидуса 100% чистого компонента В, и fα находится в интервале [0,26; 1); или
ii) частично смешиваемую бинарную систему или доэвтектического, или заэвтектического состава, содержащую в области твердого состояния только три фазовых поля,
при этом, если состав частично смешиваемой бинарной системы является доэвтектическим, то система имеет общий состав С0 в диапазоне:
C0 = Cliq -fα(Cliq - Сα)
где
Cliq - содержание жидкой фазы, существующей совместно с α-фазой, когда бинарная система находится при температуре T1=(Tliq,A +Teut)/2,
Сα - содержание а-фазы, существующей совместно с жидкой фазой, когда бинарная система находится при температуре T1 = (Тliq,A +Teut)/2,
Tliq,A - температура плавления 100% чистого компонента А,
Teut - температура эвтектической точки эвтектической бинарной системы, и fα находится в интервале [0,26; 1);
или, если состав частично смешиваемой бинарной системы является заэвтектическим, то система имеет общий состав С0 в диапазоне:
C0 = fβ(Cβ - Cliq) + Cliq
где
Cliq - содержание жидкой фазы, которая существует совместно с β-фазой, когда бинарная система находится при температуре T1=(Tliq,B +Teut)/2,
Сβ - содержание β-фазы, существующей совместно с жидкой фазой, когда бинарная система находится при температуре T1 = (Тliq,B +Тeut)/2,
Tliq,B - температура плавления 100% чистого компонента В,
Teut - температура эвтектической точки эвтектической бинарной системы, и fβ находится в интервале [0,26; 1),
при этом бинарная система смешиваемых или частично смешиваемых компонентов А и В содержит пористую, когерентную и сплошную структуру однофазного твердого раствора компонентов А и В, расположенную между поверхностями сопряжения первого и второго объектов, и вторую фазу компонентов А и В, распределенную в пористой, когерентной и сплошной структуре однофазного твердого раствора компонентов А и В.
10. Соединение по п. 9, отличающееся тем, что fα находится в одном из следующих интервалов: [0,30; 1); [0,36; 1); [0,42; 1); [0,48; 1); [0,54; 1); [0,60; 1); [0,66; 1); [0,72; 1); [0,78; 1); [0,84; 1); [0,90; 1); [0,95; 1); [0,26; 0,99]; [0,30; 0,98]; [0,36; 0,97]; [0,42; 0,96]; [0,48; 0,95]; [0,52; 0,94]; [0,58; 0,93]; [0,64; 0,92]; [0,72; 0,91]; [0,95; 0,99]; или [0,80; 0,90].
11. Соединение по п. 9, отличающееся тем, что fβ находится в одном из следующих интервалов: [0,30; 1); [0,36; 1); [0,42; 1); [0,48; 1); [0,54; 1); [0,60; 1); [0,66; 1); [0,72; 1); [0,78; 1); [0,84; 1); [0,90; 1); [0,95; 1); [0,26; 0,99]; [0,30; 0,98]; [0,36; 0,97]; [0,42; 0,96]; [0,48; 0,95]; [0,52; 0,94]; [0,58; 0,93]; [0,64; 0,92]; [0,72; 0,91]; [0,95; 0,99]; или [0,80; 0,90].
12. Соединение по любому из пп. 9-11, отличающееся тем, что бинарная система представляет собой химическую или физическую смесь компонента А и компонента В, выбранную из следующих вариантов: Ge-Si, Mo-W, Nb-W, V-W, Ag-Bi, Ag-Cu, Ag-Ge, Ag-Mo, Ag-Pb, Ag-Si, Ag-Ti, Al-Be, Al-Bi, Al-Ga, Al-Ge, Al-N, Al-Sn, Au-Bi, Au-Ge, Au-Mo, Au-Sb, Au-Si, Au-W, Bi-Cu, Bi-Ge, Bi-Ni, Bi-Sn, Cr-Sn, Cu-Si, Fe-ln, Ga-Ge, Ga-Si, Ga-Zn, Ge-ln, Ge-Pb, Ge-Sb, Ge-Sn, Ge-Zn, ln-Si, ln-Zn, Pb-W, Pd-W, Sb-Si, Si-Sn, Si-Zn, Sn-Zn, или SiO2-Al2O3.
13. Соединение по п. 12, отличающееся тем, что бинарная система представляет собой химическую или физическую смесь компонента А и компонента В, выбранную из следующих вариантов: Al-Ge, Al-Sn, Au-Ge, Au-Si, Bi-Cu, Bi-Ge, Bi-Sn, Ga-Ge, Ge-ln, ln-Si, или Si-Sn.
14. Соединение по любому из пп. 9-12, отличающееся тем, что толщина связующего слоя перед применением термообработки, формирующей пористую, когерентную и сплошную структуру однофазного твердого раствора, проходящую через связующий слой, находится в одном из следующих интервалов: от 1 до 1000 мкм, от 2 до 800 мкм, от 3 до 600 мкм, от 5 до 400 мкм, от 6 до 200 мкм, от 7 до 100 мкм, от 8 до 50 мкм, от 9 до 30 мкм или от 10 до 20 мкм.
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US11605608B2 (en) * | 2019-11-11 | 2023-03-14 | Infineon Technologies Austria Ag | Preform diffusion soldering |
EP3852140A1 (en) * | 2020-01-20 | 2021-07-21 | Infineon Technologies Austria AG | Silicon carbide power semiconductor device with a diffusion soldered joint comprising ni3sn4 and a corresponding fabrication method |
CN113020736B (zh) * | 2021-03-25 | 2022-08-30 | 哈尔滨工业大学 | 一种方钴矿热电材料与铜电极的钎焊连接方法 |
CN113319418A (zh) * | 2021-06-29 | 2021-08-31 | 哈尔滨工业大学 | 一种钼铼合金无中间层扩散连接方法 |
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EP0365807B1 (en) | 1988-10-12 | 1993-12-22 | International Business Machines Corporation | Bonding of metallic surfaces |
US5038996A (en) | 1988-10-12 | 1991-08-13 | International Business Machines Corporation | Bonding of metallic surfaces |
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EP1337376B1 (de) * | 2000-09-07 | 2005-10-12 | Infineon Technologies AG | Lotmittel zur verwendung bei diffusionslotprozessen |
US6854636B2 (en) * | 2002-12-06 | 2005-02-15 | International Business Machines Corporation | Structure and method for lead free solder electronic package interconnections |
DE10314876B4 (de) * | 2003-04-01 | 2008-02-14 | Infineon Technologies Ag | Verfahren zum mehrstufigen Herstellen von Diffusionslötverbindungen und seine Verwendung für Leistungsbauteile mit Halbleiterchips |
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CN102345078B (zh) * | 2011-09-13 | 2014-11-05 | 昆明理工大学 | 一种多孔NiAl金属间化合物的制备方法 |
TWI446982B (zh) | 2011-12-20 | 2014-08-01 | Ind Tech Res Inst | 熱電模組之固液擴散接合結構及其製造方法 |
DE102013103081A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Verfahren zum Verbinden von Fügepartnern und Anordnung von Fügepartnern |
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2016
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2017
- 2017-03-31 RU RU2018136792A patent/RU2018136792A/ru not_active Application Discontinuation
- 2017-03-31 CN CN201780033536.5A patent/CN109153095B/zh active Active
- 2017-03-31 JP JP2019503188A patent/JP2019520220A/ja active Pending
- 2017-03-31 DE DE112017001768.8T patent/DE112017001768T5/de active Pending
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BR112018070120A2 (pt) | 2019-02-05 |
US20170282287A1 (en) | 2017-10-05 |
DE112017001768T5 (de) | 2018-12-13 |
EP3226282A1 (en) | 2017-10-04 |
KR20180136461A (ko) | 2018-12-24 |
NO20181260A1 (en) | 2018-09-28 |
CN109153095B (zh) | 2021-05-18 |
CA3019386A1 (en) | 2017-10-05 |
GB2564331A (en) | 2019-01-09 |
IL262014A (en) | 2018-10-31 |
JP2019520220A (ja) | 2019-07-18 |
CN109153095A (zh) | 2019-01-04 |
WO2017171554A1 (en) | 2017-10-05 |
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