RU2016148886A3 - - Google Patents
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- RU2016148886A3 RU2016148886A3 RU2016148886A RU2016148886A RU2016148886A3 RU 2016148886 A3 RU2016148886 A3 RU 2016148886A3 RU 2016148886 A RU2016148886 A RU 2016148886A RU 2016148886 A RU2016148886 A RU 2016148886A RU 2016148886 A3 RU2016148886 A3 RU 2016148886A3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
- C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32284—Means for controlling or selecting resonance mode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32302—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1410703.1A GB201410703D0 (en) | 2014-06-16 | 2014-06-16 | A microwave plasma reactor for manufacturing synthetic diamond material |
| GB1410703.1 | 2014-06-16 | ||
| PCT/EP2015/062957 WO2015193155A1 (en) | 2014-06-16 | 2015-06-10 | A microwave plasma reactor for manufacturing synthetic diamond material |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| RU2016148886A RU2016148886A (ru) | 2018-07-16 |
| RU2016148886A3 true RU2016148886A3 (ru) | 2018-07-16 |
| RU2666135C2 RU2666135C2 (ru) | 2018-09-06 |
Family
ID=51266666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2016148886A RU2666135C2 (ru) | 2014-06-16 | 2015-06-10 | Свч-плазменный реактор для изготовления синтетического алмазного материала |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US10734198B2 (ru) |
| EP (1) | EP3155631B1 (ru) |
| JP (2) | JP6763785B2 (ru) |
| KR (1) | KR101854069B1 (ru) |
| CN (1) | CN106661732B (ru) |
| CA (1) | CA2946433C (ru) |
| GB (2) | GB201410703D0 (ru) |
| RU (1) | RU2666135C2 (ru) |
| SG (1) | SG11201608578PA (ru) |
| WO (1) | WO2015193155A1 (ru) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EA020763B9 (ru) | 2008-08-04 | 2015-05-29 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | Источник плазмы и способы нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы |
| GB201410703D0 (en) * | 2014-06-16 | 2014-07-30 | Element Six Technologies Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| EA201791234A1 (ru) | 2014-12-05 | 2017-11-30 | Эй-Джи-Си Гласс Юроуп, С.А. | Плазменный источник с полым катодом |
| WO2016089427A1 (en) | 2014-12-05 | 2016-06-09 | Agc Flat Glass North America, Inc. | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
| US9721765B2 (en) * | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| CN105648523A (zh) * | 2016-03-02 | 2016-06-08 | 清华大学 | 等离子体增强原子吸附的化合物半导体的外延生长装置 |
| US9831066B1 (en) * | 2016-05-27 | 2017-11-28 | Mks Instruments, Inc. | Compact microwave plasma applicator utilizing conjoining electric fields |
| JP7111299B2 (ja) * | 2016-11-14 | 2022-08-02 | 国立研究開発法人産業技術総合研究所 | ダイヤモンドを合成する方法及びプラズマ処理装置 |
| US9812295B1 (en) | 2016-11-15 | 2017-11-07 | Lyten, Inc. | Microwave chemical processing |
| RU2637187C1 (ru) * | 2016-11-29 | 2017-11-30 | Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр Институт прикладной физики Российской академии наук" (ИПФ РАН) | Плазменный свч реактор |
| US9997334B1 (en) | 2017-02-09 | 2018-06-12 | Lyten, Inc. | Seedless particles with carbon allotropes |
| US9767992B1 (en) | 2017-02-09 | 2017-09-19 | Lyten, Inc. | Microwave chemical processing reactor |
| US10920035B2 (en) | 2017-03-16 | 2021-02-16 | Lyten, Inc. | Tuning deformation hysteresis in tires using graphene |
| US10428197B2 (en) | 2017-03-16 | 2019-10-01 | Lyten, Inc. | Carbon and elastomer integration |
| US10756334B2 (en) | 2017-12-22 | 2020-08-25 | Lyten, Inc. | Structured composite materials |
| JP6969743B2 (ja) * | 2017-12-27 | 2021-11-24 | 旭ダイヤモンド工業株式会社 | ダイヤモンド製造方法 |
| CN112105922A (zh) | 2018-01-04 | 2020-12-18 | 利腾股份有限公司 | 谐振气体传感器 |
| WO2019143559A1 (en) | 2018-01-16 | 2019-07-25 | Lyten, Inc. | Microwave transparent pressure barrier |
| DE102018000401A1 (de) * | 2018-01-19 | 2019-07-25 | Ralf Spitzl | Mikrowellenplasmavorrichtung |
| US10504699B2 (en) * | 2018-04-20 | 2019-12-10 | Applied Materials, Inc. | Phased array modular high-frequency source |
| CN110551987A (zh) * | 2018-06-04 | 2019-12-10 | 至玥腾风科技投资集团有限公司 | 环形单晶无机非金属部件的制作方法、设备及飞轮 |
| JP6991934B2 (ja) * | 2018-07-02 | 2022-01-13 | 株式会社日立ハイテク | プラズマ処理装置 |
| JP7090521B2 (ja) * | 2018-09-26 | 2022-06-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11183369B2 (en) * | 2018-12-27 | 2021-11-23 | Industrial Technology Research Institute | Focalized microwave plasma reactor |
| US10812020B1 (en) | 2019-08-19 | 2020-10-20 | Lyten, Inc. | Energy emitter control circuit |
| US11348783B2 (en) * | 2019-09-05 | 2022-05-31 | Applied Materials, Inc. | Methods and apparatus for dynamical control of radial uniformity with two-story microwave cavities |
| JP7292173B2 (ja) * | 2019-10-11 | 2023-06-16 | 東京エレクトロン株式会社 | 処理方法及びプラズマ処理装置 |
| IL295784A (en) * | 2020-02-24 | 2022-10-01 | M7D Corp | Plasma design for diamond growth |
| CN111511090B (zh) * | 2020-04-13 | 2022-05-10 | 北京工业大学 | 微波等离子体反应器 |
| JP2022039820A (ja) * | 2020-08-28 | 2022-03-10 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP2022039821A (ja) * | 2020-08-28 | 2022-03-10 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法、および誘電体窓 |
| CN112301332A (zh) * | 2020-09-25 | 2021-02-02 | 上海芯承电子科技有限公司 | 一种用于化学气相沉积钻石的设备工艺反应器 |
| JP2022110698A (ja) * | 2021-01-19 | 2022-07-29 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| TWI810772B (zh) | 2021-12-30 | 2023-08-01 | 日揚科技股份有限公司 | 一種快速退火設備 |
| JP7250969B1 (ja) | 2022-02-08 | 2023-04-03 | 宏碩系統股▲フン▼有限公司 | 人工ダイヤモンドプラズマ生成機器 |
| CN114976559A (zh) * | 2022-06-20 | 2022-08-30 | 深圳市恒运昌真空技术有限公司 | 一种微波谐振腔 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
| JPS63236791A (ja) * | 1987-03-24 | 1988-10-03 | Matsushita Electric Ind Co Ltd | ダイヤモンドの製造方法 |
| JPS6424094A (en) * | 1987-07-21 | 1989-01-26 | Nat Inst Res Inorganic Mat | Synthesizing apparatus for diamond |
| JPH03111577A (ja) * | 1989-09-26 | 1991-05-13 | Idemitsu Petrochem Co Ltd | マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法 |
| US5179264A (en) | 1989-12-13 | 1993-01-12 | International Business Machines Corporation | Solid state microwave powered material and plasma processing systems |
| JPH0810634B2 (ja) * | 1990-06-01 | 1996-01-31 | インターナショナル・ビジネス・マシーンズ・コーポレイション | マイクロ波給電式材料／プラズマ処理システム |
| KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
| JPH04144992A (ja) * | 1990-10-01 | 1992-05-19 | Idemitsu Petrochem Co Ltd | マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法 |
| JPH06256952A (ja) * | 1993-03-04 | 1994-09-13 | Ngk Spark Plug Co Ltd | ダイヤモンド膜の製造方法 |
| KR100363603B1 (ko) | 1994-03-31 | 2003-03-03 | 유티-배텔, 엘엘씨 | 가변주파수마이크로파가열장치 |
| US5558800A (en) | 1995-06-19 | 1996-09-24 | Northrop Grumman | Microwave power radiator for microwave heating applications |
| US5907221A (en) | 1995-08-16 | 1999-05-25 | Applied Materials, Inc. | Inductively coupled plasma reactor with an inductive coil antenna having independent loops |
| US5736818A (en) * | 1996-03-15 | 1998-04-07 | Board Of Trustees Operating Michigan State University | Resonant radiofrequency wave plasma generating apparatus with improved stage |
| TW392215B (en) * | 1997-02-19 | 2000-06-01 | Anelva Corp | Surface processing apparatus |
| US6158384A (en) | 1997-06-05 | 2000-12-12 | Applied Materials, Inc. | Plasma reactor with multiple small internal inductive antennas |
| DE19802971C2 (de) | 1998-01-27 | 1999-12-02 | Fraunhofer Ges Forschung | Plasmareaktor |
| RU2149521C1 (ru) * | 1999-02-02 | 2000-05-20 | Аозт "Дигазкрон" | Свч-плазмохимический реактор |
| FR2840451B1 (fr) | 2002-06-04 | 2004-08-13 | Centre Nat Rech Scient | Dispositif de production d'une nappe de plasma |
| JP4255061B2 (ja) * | 2003-05-23 | 2009-04-15 | 財団法人浜松科学技術研究振興会 | マイクロ波プラズマ発生方法およびマイクロ波プラズマ発生装置 |
| US7569800B2 (en) * | 2004-11-15 | 2009-08-04 | Yonglai Tian | Method and apparatus for rapid thermal processing and bonding of materials using RF and microwaves |
| JP2006244891A (ja) * | 2005-03-04 | 2006-09-14 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置 |
| WO2006113539A2 (en) | 2005-04-13 | 2006-10-26 | Group4 Labs, Llc | Semiconductor devices having gallium nitride epilayers on diamond substrates |
| JP5457028B2 (ja) | 2005-06-22 | 2014-04-02 | エレメント シックス リミテッド | ハイカラーのダイヤモンド層 |
| JP4729741B2 (ja) * | 2006-01-20 | 2011-07-20 | 独立行政法人産業技術総合研究所 | ダイヤモンド製造方法 |
| EP1976346A1 (en) * | 2007-03-30 | 2008-10-01 | Ecole Polytechnique | Apparatus for generating a plasma |
| KR101136823B1 (ko) | 2010-07-12 | 2012-04-19 | (주)케이엠앤아이 | 차량용 전동트랙의 기어박스 및 그 조립방법 |
| GB201021865D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| GB201021913D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
| GB201021853D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| GB201021855D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
| GB201021860D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for diamond synthesis |
| GB2486778B (en) | 2010-12-23 | 2013-10-23 | Element Six Ltd | Controlling doping of synthetic diamond material |
| FR2974701B1 (fr) * | 2011-04-27 | 2014-03-21 | Sairem Soc Pour L Applic Ind De La Rech En Electronique Et Micro Ondes | Installation de production d'un plasma micro-onde |
| GB201121666D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Synthetic diamond coated compound semiconductor substrates |
| GB201209424D0 (en) | 2012-05-28 | 2012-07-11 | Element Six Ltd | Free-standing non-planar polycrystalline synthetic diamond components |
| GB201410703D0 (en) * | 2014-06-16 | 2014-07-30 | Element Six Technologies Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
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2014
- 2014-06-16 GB GBGB1410703.1A patent/GB201410703D0/en not_active Ceased
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2015
- 2015-06-10 SG SG11201608578PA patent/SG11201608578PA/en unknown
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- 2015-06-10 RU RU2016148886A patent/RU2666135C2/ru active
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- 2015-06-10 JP JP2016573532A patent/JP6763785B2/ja active Active
- 2015-06-10 EP EP15727013.3A patent/EP3155631B1/en active Active
- 2015-06-10 KR KR1020167034988A patent/KR101854069B1/ko active IP Right Grant
- 2015-06-10 CN CN201580027337.4A patent/CN106661732B/zh active Active
- 2015-06-10 US US15/304,366 patent/US10734198B2/en active Active
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2018
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|---|---|
| GB2532532A (en) | 2016-05-25 |
| RU2016148886A (ru) | 2018-07-16 |
| CN106661732A (zh) | 2017-05-10 |
| JP2019077951A (ja) | 2019-05-23 |
| JP2017521556A (ja) | 2017-08-03 |
| GB201410703D0 (en) | 2014-07-30 |
| GB2532532B (en) | 2018-10-17 |
| US20170040145A1 (en) | 2017-02-09 |
| SG11201608578PA (en) | 2016-11-29 |
| RU2666135C2 (ru) | 2018-09-06 |
| KR101854069B1 (ko) | 2018-05-02 |
| US10734198B2 (en) | 2020-08-04 |
| JP6763785B2 (ja) | 2020-09-30 |
| GB201510084D0 (en) | 2015-07-22 |
| WO2015193155A1 (en) | 2015-12-23 |
| EP3155631A1 (en) | 2017-04-19 |
| CA2946433C (en) | 2018-10-02 |
| CA2946433A1 (en) | 2015-12-23 |
| KR20170024580A (ko) | 2017-03-07 |
| EP3155631B1 (en) | 2020-08-05 |
| CN106661732B (zh) | 2019-03-19 |