PT831077E - Substrato ceramico para celulas solares de camada fina de silicio cristalino - Google Patents

Substrato ceramico para celulas solares de camada fina de silicio cristalino

Info

Publication number
PT831077E
PT831077E PT96114972T PT96114972T PT831077E PT 831077 E PT831077 E PT 831077E PT 96114972 T PT96114972 T PT 96114972T PT 96114972 T PT96114972 T PT 96114972T PT 831077 E PT831077 E PT 831077E
Authority
PT
Portugal
Prior art keywords
ceramic substrate
crystal silicon
silicon fine
layer cells
fine layer
Prior art date
Application number
PT96114972T
Other languages
English (en)
Inventor
Armin Raeuber
Achim Eyer
Hans-Juergen Pohlmann
Original Assignee
Tece Technical Ceramics Gmbh &
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tece Technical Ceramics Gmbh & filed Critical Tece Technical Ceramics Gmbh &
Publication of PT831077E publication Critical patent/PT831077E/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5093—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
    • C04B41/5096—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/363—Carbon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
PT96114972T 1996-09-18 1996-09-18 Substrato ceramico para celulas solares de camada fina de silicio cristalino PT831077E (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP96114972A EP0831077B1 (de) 1996-09-18 1996-09-18 Keramisches Substrat für kristalline Silicium-Dünnschicht-Solarzellen
PCT/EP1998/001688 WO1999049523A1 (de) 1996-09-18 1998-03-23 Keramisches substrat für kristalline silicium-dünnschicht-solarzellen

Publications (1)

Publication Number Publication Date
PT831077E true PT831077E (pt) 2002-04-29

Family

ID=26070300

Family Applications (1)

Application Number Title Priority Date Filing Date
PT96114972T PT831077E (pt) 1996-09-18 1996-09-18 Substrato ceramico para celulas solares de camada fina de silicio cristalino

Country Status (6)

Country Link
EP (1) EP0831077B1 (pt)
AU (1) AU7209198A (pt)
DE (1) DE59608018D1 (pt)
ES (1) ES2163563T3 (pt)
PT (1) PT831077E (pt)
WO (1) WO1999049523A1 (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0831077B1 (de) * 1996-09-18 2001-10-24 TeCe Technical Ceramics GmbH & Co. KG Keramisches Substrat für kristalline Silicium-Dünnschicht-Solarzellen
DE10060221A1 (de) 2000-12-04 2002-06-13 Cfi Ceramics For Industry Gmbh Substrat auf Basis von Siliciumnitrid für Halbleiter-Bauelemente
CN103489952B (zh) * 2012-06-14 2016-01-06 山东浪潮华光光电子股份有限公司 一种SiC衬底单节太阳能电池外延结构及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2938807A (en) * 1957-08-13 1960-05-31 James C Andersen Method of making refractory bodies
DE1671092A1 (de) * 1967-06-05 1971-09-09 Schneider & Co Verfahren zur Herstellung eines dichten Formkoerpers auf der Basis von SIC
GB1370478A (en) * 1971-11-19 1974-10-16 Rolls Royce Injection of a ceramic into a mould
DE3536743C2 (de) * 1985-10-15 1994-11-10 Siemens Ag Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen
JPH05315259A (ja) * 1991-08-06 1993-11-26 Tonen Corp 多結晶シリコン膜の製造方法
DE4133644A1 (de) * 1991-10-11 1993-04-15 Nukem Gmbh Halbleiterbauelement, verfahren zu dessen herstellung sowie hierzu benutzte anordnung
JPH07153698A (ja) * 1993-11-30 1995-06-16 Tonen Corp シリコン積層体
EP0831077B1 (de) * 1996-09-18 2001-10-24 TeCe Technical Ceramics GmbH & Co. KG Keramisches Substrat für kristalline Silicium-Dünnschicht-Solarzellen

Also Published As

Publication number Publication date
DE59608018D1 (de) 2001-11-29
AU7209198A (en) 1999-10-18
WO1999049523A1 (de) 1999-09-30
EP0831077B1 (de) 2001-10-24
ES2163563T3 (es) 2002-02-01
EP0831077A1 (de) 1998-03-25

Similar Documents

Publication Publication Date Title
EE200000602A (et) Integraallülitusega varustatud paberist valmistatud põhimik
DE60004924D1 (de) Zusammensetzung für Keramiksubstrat und Keramikschaltungselement
DE69430765T2 (de) Eingebettetes Substrat für integrierte Schaltungsmodule
AU563467B2 (en) Ceramic substrate for piezoelectric element
DE69835747D1 (de) Substrat zur montage von halbleiterchips
DE69123269D1 (de) Überzugsschicht für mikroelektronische Anordnungen und Substrate
DE69842191D1 (de) Halbleiterscheibenhaltevorrichtung
DE69703446D1 (de) Feines oder subdenier faservliessubstrat
DE69832311D1 (de) Drucksensitive Klebmittel zum Rückseitenpolieren von Siliziumscheiben
DE69513361T2 (de) Trägerbehälter für Substratscheiben
FI964585A0 (fi) Käsitelty alusta, jolla on parantuneet irrotusominaisuudet
DE69029107T2 (de) Substrate für beta-Galactosidase
DE69513469T2 (de) Silizium-auf-Isolator-Substrat und dessen Herstellungsverfahren
DE69400142T2 (de) Trägerkassette für Siliziumscheiben
DE69917826D1 (de) Keramisches Substrat und dessen Polierverfahren
DE69939200D1 (de) Substratmaterialien für Oxidsupraleiter
PT831077E (pt) Substrato ceramico para celulas solares de camada fina de silicio cristalino
AU2965299A (en) Substrate for ic crystals
DE69417173D1 (de) Keramiksubstrat für Halbleitervorrichtung
DE69523252T2 (de) Einkristallssubstrat enthaltende Gegenstände
KR970056082U (ko) 반도체 웨이퍼 자동반송용 캐리어
KR970059461U (ko) 엘씨디용 글래스 기판의 언로딩 장치
KR950010504U (ko) 세라믹 기판 절단용 지그
KR980005475U (ko) 실리콘 웨이퍼의 기판상 고정 구조
KR960025430U (ko) 스테이지 경사 보상이 가능한 웨이퍼 척 장치