PT1032949E - Componente semicondutor em particular uma celula solar e processo para o seu fabrico - Google Patents
Componente semicondutor em particular uma celula solar e processo para o seu fabricoInfo
- Publication number
- PT1032949E PT1032949E PT98948658T PT98948658T PT1032949E PT 1032949 E PT1032949 E PT 1032949E PT 98948658 T PT98948658 T PT 98948658T PT 98948658 T PT98948658 T PT 98948658T PT 1032949 E PT1032949 E PT 1032949E
- Authority
- PT
- Portugal
- Prior art keywords
- semiconductor component
- base material
- manufacture
- solar cell
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052960 marcasite Inorganic materials 0.000 abstract 2
- 229910052683 pyrite Inorganic materials 0.000 abstract 2
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98810382A EP0954033A1 (de) | 1998-04-29 | 1998-04-29 | Halbleiterbauelement, insbesondere eine Solarzelle, mit einer Schicht aus Pyrit, sowie Verfahren zu dessen Herstellung |
| PCT/CH1998/000455 WO1999056325A1 (de) | 1998-04-29 | 1998-10-23 | Halbleiterbauelement, insbesondere eine solarzelle, sowie verfahren zu dessen herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PT1032949E true PT1032949E (pt) | 2005-06-30 |
Family
ID=8236060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PT98948658T PT1032949E (pt) | 1998-04-29 | 1998-10-23 | Componente semicondutor em particular uma celula solar e processo para o seu fabrico |
Country Status (26)
| Country | Link |
|---|---|
| US (1) | US6635942B2 (pt) |
| EP (2) | EP0954033A1 (pt) |
| JP (1) | JP3874429B2 (pt) |
| KR (1) | KR100613524B1 (pt) |
| CN (1) | CN1218405C (pt) |
| AR (1) | AR019111A1 (pt) |
| AT (1) | ATE287576T1 (pt) |
| AU (1) | AU756671B2 (pt) |
| BG (1) | BG64069B1 (pt) |
| BR (1) | BR9808074B1 (pt) |
| CA (1) | CA2275298C (pt) |
| CZ (1) | CZ298589B6 (pt) |
| DE (1) | DE59812504D1 (pt) |
| DK (1) | DK1032949T3 (pt) |
| ES (1) | ES2239406T3 (pt) |
| HU (1) | HU227655B1 (pt) |
| IL (1) | IL131534A (pt) |
| MY (1) | MY124379A (pt) |
| NO (1) | NO993552L (pt) |
| NZ (1) | NZ336848A (pt) |
| PL (1) | PL192742B1 (pt) |
| PT (1) | PT1032949E (pt) |
| RU (1) | RU2219620C2 (pt) |
| TR (1) | TR199903266T1 (pt) |
| TW (1) | TW434915B (pt) |
| WO (1) | WO1999056325A1 (pt) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300375C (zh) * | 2004-12-07 | 2007-02-14 | 浙江大学 | 电沉积氧化及热硫化合成二硫化铁薄膜的方法 |
| US8093684B2 (en) * | 2006-01-16 | 2012-01-10 | Sharp Kabushiki Kaisha | Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same |
| JP4938314B2 (ja) * | 2006-01-16 | 2012-05-23 | シャープ株式会社 | 光電変換装置および半導体接合素子の製造方法 |
| US20110240108A1 (en) * | 2010-04-02 | 2011-10-06 | Matt Law | Method To Synthesize Colloidal Iron Pyrite (FeS2) Nanocrystals And Fabricate Iron Pyrite Thin Film Solar Cells |
| US10680125B2 (en) * | 2011-11-15 | 2020-06-09 | Nutech Ventures | Iron pyrite nanocrystals |
| JP5377732B2 (ja) * | 2012-09-14 | 2013-12-25 | シャープ株式会社 | 半導体、ｐ型半導体、半導体接合素子、ｐｎ接合素子、および光電変換装置 |
| US10790144B2 (en) | 2013-06-24 | 2020-09-29 | Arizona Board Of Regents On Behalf Of Arizona State University | Method to produce pyrite |
| US9705012B2 (en) * | 2014-03-18 | 2017-07-11 | The United States Of America, As Represented By The Secretary Of The Navy | Method of passivating an iron disulfide surface via encapsulation in zinc sulfide |
| US10181598B2 (en) | 2015-01-05 | 2019-01-15 | University Of Florida Resarch Foundation, Inc. | Lithium ion battery cathodes, methods of making, and methods of use thereof |
| CN105140338B (zh) * | 2015-07-29 | 2017-07-04 | 云南师范大学 | 一种低成本FeS2薄膜太阳电池的制备方法 |
| EP3418719A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | System and method for improved identification of particles or cells |
| EP3418721A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | A microfluidic chip |
| EP3418717A1 (en) | 2017-06-23 | 2018-12-26 | Cellix Limited | A microfluidic apparatus for separation of particulates in a fluid |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3852563A (en) * | 1974-02-01 | 1974-12-03 | Hewlett Packard Co | Thermal printing head |
| US4131486A (en) * | 1977-01-19 | 1978-12-26 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Back wall solar cell |
| US4710786A (en) * | 1978-03-16 | 1987-12-01 | Ovshinsky Stanford R | Wide band gap semiconductor alloy material |
| JPS59115574A (ja) * | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| US4589918A (en) * | 1984-03-28 | 1986-05-20 | National Research Institute For Metals | Thermal shock resistant thermoelectric material |
| CA1265922A (en) * | 1984-07-27 | 1990-02-20 | Helmut Tributsch | Photoactive pyrite layer and process for making and using same |
| DE3526910A1 (de) * | 1984-07-27 | 1986-02-13 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | Photoaktive pyritschicht, verfahren zu deren herstellung und verwendung derartiger pyritschichten |
| US4766471A (en) * | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
| FR2694451B1 (fr) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Cellule photovoltaïque. |
| CA2110097C (en) * | 1992-11-30 | 2002-07-09 | Soichiro Kawakami | Secondary battery |
-
1998
- 1998-04-29 EP EP98810382A patent/EP0954033A1/de not_active Withdrawn
- 1998-10-23 AT AT98948658T patent/ATE287576T1/de active
- 1998-10-23 WO PCT/CH1998/000455 patent/WO1999056325A1/de active IP Right Grant
- 1998-10-23 DK DK98948658T patent/DK1032949T3/da active
- 1998-10-23 ES ES98948658T patent/ES2239406T3/es not_active Expired - Lifetime
- 1998-10-23 NZ NZ336848A patent/NZ336848A/en not_active IP Right Cessation
- 1998-10-23 EP EP98948658A patent/EP1032949B1/de not_active Expired - Lifetime
- 1998-10-23 DE DE59812504T patent/DE59812504D1/de not_active Expired - Lifetime
- 1998-10-23 US US09/319,772 patent/US6635942B2/en not_active Expired - Lifetime
- 1998-10-23 CZ CZ0150499A patent/CZ298589B6/cs not_active IP Right Cessation
- 1998-10-23 IL IL13153498A patent/IL131534A/en not_active IP Right Cessation
- 1998-10-23 AU AU95275/98A patent/AU756671B2/en not_active Ceased
- 1998-10-23 KR KR1019997006817A patent/KR100613524B1/ko not_active IP Right Cessation
- 1998-10-23 RU RU99118904/28A patent/RU2219620C2/ru not_active IP Right Cessation
- 1998-10-23 CN CN988024780A patent/CN1218405C/zh not_active Expired - Fee Related
- 1998-10-23 PT PT98948658T patent/PT1032949E/pt unknown
- 1998-10-23 JP JP54086599A patent/JP3874429B2/ja not_active Expired - Fee Related
- 1998-10-23 TR TR1999/03266T patent/TR199903266T1/xx unknown
- 1998-10-23 CA CA002275298A patent/CA2275298C/en not_active Expired - Fee Related
- 1998-10-23 HU HU0004391A patent/HU227655B1/hu not_active IP Right Cessation
- 1998-10-23 BR BRPI9808074-1A patent/BR9808074B1/pt not_active IP Right Cessation
- 1998-10-23 PL PL337092A patent/PL192742B1/pl unknown
-
1999
- 1999-04-26 MY MYPI99001623A patent/MY124379A/en unknown
- 1999-04-27 AR ARP990101934A patent/AR019111A1/es active IP Right Grant
- 1999-04-28 TW TW088106833A patent/TW434915B/zh not_active IP Right Cessation
- 1999-07-20 NO NO993552A patent/NO993552L/no not_active Application Discontinuation
- 1999-09-01 BG BG103706A patent/BG64069B1/bg unknown
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