PL337092A1 - Semiconductive structural element, in particular a solar cell, and method of making same - Google Patents

Semiconductive structural element, in particular a solar cell, and method of making same

Info

Publication number
PL337092A1
PL337092A1 PL98337092A PL33709298A PL337092A1 PL 337092 A1 PL337092 A1 PL 337092A1 PL 98337092 A PL98337092 A PL 98337092A PL 33709298 A PL33709298 A PL 33709298A PL 337092 A1 PL337092 A1 PL 337092A1
Authority
PL
Poland
Prior art keywords
semiconductive
solar cell
base material
structural element
making same
Prior art date
Application number
PL98337092A
Other versions
PL192742B1 (en
Inventor
VECCHIA Nunzio LA
Original Assignee
VECCHIA Nunzio LA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VECCHIA Nunzio LA filed Critical VECCHIA Nunzio LA
Publication of PL337092A1 publication Critical patent/PL337092A1/en
Publication of PL192742B1 publication Critical patent/PL192742B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A semiconductor component, having a semiconductor base material (40) of iron pyrites, is new. A semiconductor component has a single crystal or polycrystalline semiconductor base material (40) with p-type and n-type layers (52, 53), the base material comprising a purified FeS2 layer (51). An Independent claim is also included for production of the above semiconductor component, in which the base material comprises natural pyrites or a synthetic FeS2.
PL337092A 1998-04-29 1998-10-23 Semiconductive structural element, in particular a solar cell, and method of making same PL192742B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98810382A EP0954033A1 (en) 1998-04-29 1998-04-29 Semiconductor device, in particular a solar cell, having a layer of pyrite and method of manufacturing the same

Publications (2)

Publication Number Publication Date
PL337092A1 true PL337092A1 (en) 2000-07-31
PL192742B1 PL192742B1 (en) 2006-12-29

Family

ID=8236060

Family Applications (1)

Application Number Title Priority Date Filing Date
PL337092A PL192742B1 (en) 1998-04-29 1998-10-23 Semiconductive structural element, in particular a solar cell, and method of making same

Country Status (26)

Country Link
US (1) US6635942B2 (en)
EP (2) EP0954033A1 (en)
JP (1) JP3874429B2 (en)
KR (1) KR100613524B1 (en)
CN (1) CN1218405C (en)
AR (1) AR019111A1 (en)
AT (1) ATE287576T1 (en)
AU (1) AU756671B2 (en)
BG (1) BG64069B1 (en)
BR (1) BR9808074B1 (en)
CA (1) CA2275298C (en)
CZ (1) CZ298589B6 (en)
DE (1) DE59812504D1 (en)
DK (1) DK1032949T3 (en)
ES (1) ES2239406T3 (en)
HU (1) HU227655B1 (en)
IL (1) IL131534A (en)
MY (1) MY124379A (en)
NO (1) NO993552L (en)
NZ (1) NZ336848A (en)
PL (1) PL192742B1 (en)
PT (1) PT1032949E (en)
RU (1) RU2219620C2 (en)
TR (1) TR199903266T1 (en)
TW (1) TW434915B (en)
WO (1) WO1999056325A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1300375C (en) * 2004-12-07 2007-02-14 浙江大学 Method of synthesizing ferrous disulfide film by electro deposition oxidation and hot sulfurization
JP4938314B2 (en) * 2006-01-16 2012-05-23 シャープ株式会社 Photoelectric conversion device and method of manufacturing semiconductor junction element
US8093684B2 (en) * 2006-01-16 2012-01-10 Sharp Kabushiki Kaisha Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same
US20110240108A1 (en) 2010-04-02 2011-10-06 Matt Law Method To Synthesize Colloidal Iron Pyrite (FeS2) Nanocrystals And Fabricate Iron Pyrite Thin Film Solar Cells
US10680125B2 (en) * 2011-11-15 2020-06-09 Nutech Ventures Iron pyrite nanocrystals
JP5377732B2 (en) * 2012-09-14 2013-12-25 シャープ株式会社 Semiconductor, p-type semiconductor, semiconductor junction element, pn junction element, and photoelectric conversion device
US10790144B2 (en) 2013-06-24 2020-09-29 Arizona Board Of Regents On Behalf Of Arizona State University Method to produce pyrite
US9705012B2 (en) * 2014-03-18 2017-07-11 The United States Of America, As Represented By The Secretary Of The Navy Method of passivating an iron disulfide surface via encapsulation in zinc sulfide
US10181598B2 (en) 2015-01-05 2019-01-15 University Of Florida Resarch Foundation, Inc. Lithium ion battery cathodes, methods of making, and methods of use thereof
CN105140338B (en) * 2015-07-29 2017-07-04 云南师范大学 A kind of inexpensive FeS2The preparation method of thin film solar cell
EP3418721A1 (en) 2017-06-23 2018-12-26 Cellix Limited A microfluidic chip
EP3418717A1 (en) 2017-06-23 2018-12-26 Cellix Limited A microfluidic apparatus for separation of particulates in a fluid
EP3418719A1 (en) 2017-06-23 2018-12-26 Cellix Limited System and method for improved identification of particles or cells

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852563A (en) * 1974-02-01 1974-12-03 Hewlett Packard Co Thermal printing head
US4131486A (en) * 1977-01-19 1978-12-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Back wall solar cell
US4710786A (en) * 1978-03-16 1987-12-01 Ovshinsky Stanford R Wide band gap semiconductor alloy material
JPS59115574A (en) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd Photoelectric conversion device manufacturing method
US4589918A (en) * 1984-03-28 1986-05-20 National Research Institute For Metals Thermal shock resistant thermoelectric material
DE3526910A1 (en) * 1984-07-27 1986-02-13 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin Photoactive pyrite layer, method for the preparation thereof, and use of pyrite layers of this type
CA1265922A (en) * 1984-07-27 1990-02-20 Helmut Tributsch Photoactive pyrite layer and process for making and using same
US4766471A (en) * 1986-01-23 1988-08-23 Energy Conversion Devices, Inc. Thin film electro-optical devices
FR2694451B1 (en) * 1992-07-29 1994-09-30 Asulab Sa Photovoltaic cell.
CA2110097C (en) * 1992-11-30 2002-07-09 Soichiro Kawakami Secondary battery

Also Published As

Publication number Publication date
CA2275298A1 (en) 1999-10-29
BR9808074B1 (en) 2010-02-09
HUP0004391A2 (en) 2001-03-28
EP1032949A1 (en) 2000-09-06
EP1032949B1 (en) 2005-01-19
BG64069B1 (en) 2003-11-28
IL131534A0 (en) 2001-01-28
ES2239406T3 (en) 2005-09-16
US6635942B2 (en) 2003-10-21
PT1032949E (en) 2005-06-30
CA2275298C (en) 2005-07-19
TR199903266T1 (en) 2002-01-21
EP0954033A1 (en) 1999-11-03
KR20000070571A (en) 2000-11-25
JP3874429B2 (en) 2007-01-31
CZ150499A3 (en) 2000-05-17
AU9527598A (en) 1999-11-16
WO1999056325A1 (en) 1999-11-04
NZ336848A (en) 2001-10-26
DE59812504D1 (en) 2005-02-24
BR9808074A (en) 2000-03-28
US20030107099A1 (en) 2003-06-12
CZ298589B6 (en) 2007-11-14
NO993552D0 (en) 1999-07-20
DK1032949T3 (en) 2005-05-23
HU227655B1 (en) 2011-10-28
TW434915B (en) 2001-05-16
BG103706A (en) 2000-05-31
PL192742B1 (en) 2006-12-29
AR019111A1 (en) 2001-12-26
AU756671B2 (en) 2003-01-23
BR9808074C2 (en) 2000-09-05
CN1218405C (en) 2005-09-07
ATE287576T1 (en) 2005-02-15
MY124379A (en) 2006-06-30
IL131534A (en) 2004-06-01
RU2219620C2 (en) 2003-12-20
CN1253665A (en) 2000-05-17
JP2002516651A (en) 2002-06-04
KR100613524B1 (en) 2006-08-16
HUP0004391A3 (en) 2004-01-28
NO993552L (en) 1999-11-04

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