KR860000704A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR860000704A KR860000704A KR1019840003366A KR840003366A KR860000704A KR 860000704 A KR860000704 A KR 860000704A KR 1019840003366 A KR1019840003366 A KR 1019840003366A KR 840003366 A KR840003366 A KR 840003366A KR 860000704 A KR860000704 A KR 860000704A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- manufacturing
- semiconductor device
- semiconductor substrate
- semiconductor
- Prior art date
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Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제4도는 본원 발명 제법의 일례의 공정도.4 is a flowchart of an example of the production method of the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
(11):반도체 기체, (12):다결정층생성을 위한 본 바탕 층, (13s)(13p):단결정층 및 다결정층(11): semiconductor gas, (12): main base layer for polycrystalline layer generation, (13s) (13p): single crystal layer and polycrystalline layer
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019840003366A KR860000704A (en) | 1984-06-15 | 1984-06-15 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019840003366A KR860000704A (en) | 1984-06-15 | 1984-06-15 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR860000704A true KR860000704A (en) | 1986-01-30 |
Family
ID=69172509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840003366A KR860000704A (en) | 1984-06-15 | 1984-06-15 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR860000704A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100612885B1 (en) * | 2004-12-30 | 2006-08-14 | 삼성전자주식회사 | Fabrication method of Substrate having locally integrated single crystalline silicon layer |
-
1984
- 1984-06-15 KR KR1019840003366A patent/KR860000704A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100612885B1 (en) * | 2004-12-30 | 2006-08-14 | 삼성전자주식회사 | Fabrication method of Substrate having locally integrated single crystalline silicon layer |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |