Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사filedCritical문정환
Priority to KR1019910000708ApriorityCriticalpatent/KR0178994B1/en
Publication of KR920015610ApublicationCriticalpatent/KR920015610A/en
Application grantedgrantedCritical
Publication of KR0178994B1publicationCriticalpatent/KR0178994B1/en
접합격리영역 형성방법Bonding isolation region formation method
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본발명의 제조공정 단면도.2 is a cross-sectional view of the manufacturing process of the present invention.
Claims (1)
기판위에 원하는 에피택셜층 두께의 절반만큼을 성장시키고 제1접합격리영역의 패턴을 형성한 다음 이 패턴에 따라 오픈된 에피택셜층 표면에 불순물을 확산시켜 제1접합격리영역을 형성하는 단계, 원하는 에피택셜층의 나머지 절반의 두께만큼을 성장시킨후 상기 제1접합격리영역과 동일한 공정을 반복 실시하여 제2접합격리영역을 완성하는 단계가 차례로 포함됨을 특징으로 하는 접합격리영역 형성방법.Growing a half of the desired epitaxial layer thickness on the substrate, forming a pattern of the first junction isolation region, and then diffusing impurities on the open epitaxial layer surface according to the pattern to form a first junction isolation region. And growing the thickness of the other half of the epitaxial layer and repeating the same process as the first junction isolation region, thereby completing the second junction isolation region.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000708A1991-01-171991-01-17Method for forming an isolation region of junction
KR0178994B1
(en)