KR970023943A - Method of forming alignment key pattern of bipolar device - Google Patents

Method of forming alignment key pattern of bipolar device Download PDF

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Publication number
KR970023943A
KR970023943A KR1019950037048A KR19950037048A KR970023943A KR 970023943 A KR970023943 A KR 970023943A KR 1019950037048 A KR1019950037048 A KR 1019950037048A KR 19950037048 A KR19950037048 A KR 19950037048A KR 970023943 A KR970023943 A KR 970023943A
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KR
South Korea
Prior art keywords
alignment key
key pattern
forming
pattern
silicon substrate
Prior art date
Application number
KR1019950037048A
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Korean (ko)
Inventor
모종규
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문정환
엘지반도체 주식회사
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Application filed by 문정환, 엘지반도체 주식회사 filed Critical 문정환
Priority to KR1019950037048A priority Critical patent/KR970023943A/en
Publication of KR970023943A publication Critical patent/KR970023943A/en

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Abstract

본 발명에 의한 바이폴라 소자의 정렬키 형성방법에서는 실리콘기판 상에 매몰층과, 제 1정렬키 패턴을 형성시키되, 제 1정렬키 패턴을 실리콘기판 상에 형성됨 에피층의 상면에서 에피층에 투과되어 관찰되는 제 1정렬키 패턴의 쉬프트 된 값만큼 역 쉬프트 하여 형성시키는 단계와, 매몰층과 제 1정렬키 패턴을 형성시킨 실리콘기판 상에 에피층을 형성시키는 단계와, 에피층에 제 1정렬키 패턴과 정 정렬된 제 2정렬키 패턴을 형성시키면서, 격리층 패턴을 형성시키는 단계를 포함하여 이루어진다.In the method of forming an alignment key of a bipolar device according to the present invention, a buried layer and a first alignment key pattern are formed on a silicon substrate, and the first alignment key pattern is formed on the silicon substrate. Forming an epitaxial layer on the silicon substrate on which the buried layer and the first alignment key pattern are formed, by forming a reverse shift by the shifted value of the first alignment key pattern observed; And forming an isolation layer pattern while forming a second alignment key pattern aligned with the pattern.

Description

바이폴라 소자의 정렬키 패턴 형성방법Method of forming alignment key pattern of bipolar device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 2 도는 본 발명에 의한 바이폴라 소자의 정렬키 패턴 형성방법의 단계를 도시한 단면도.2 is a cross-sectional view showing the steps of a method for forming an alignment key pattern of a bipolar device according to the present invention.

Claims (1)

바이폴라 소자의 정렬키 패턴 형성방법에 있어서, 1) 실리콘기판 상에 매몰층과, 제 1정렬키 패턴을 형성시키되, 상기 제 1정렬키 패턴을 상기 실리콘기판 상에 형성될 에피층의 상면에서, 상기 에피층에 투과되어 관찰되는 상기 제 1정렬키 패턴의 쉬프트된 값만큼 역 쉬프트하여 형성시키는 단계와, 2) 상기 매몰층과 상기 제 1정렬키 패턴을 형성시킨 실리콘기판 상에 에피층을 형성시키는 단계와, 3) 상기 에피층에 상기 제 1정렬키 패턴과 정 정렬된 제 2정렬키 패턴을 형성시키면서, 격리층 패턴을 형성시키는 단계를 포함하여 이루어지는 바이폴라 소자의 정렬키 패턴 형성방법.1. A method of forming an alignment key pattern of a bipolar device, the method comprising: 1) forming a buried layer and a first alignment key pattern on a silicon substrate, wherein the first alignment key pattern is formed on an upper surface of an epitaxial layer to be formed on the silicon substrate; Inversely shifting the shifted value of the first alignment key pattern observed through the epi layer, and 2) forming an epitaxial layer on the silicon substrate on which the buried layer and the first alignment key pattern are formed. And 3) forming an isolation layer pattern while forming a second alignment key pattern aligned with the first alignment key pattern on the epitaxial layer, wherein the isolation layer pattern is formed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950037048A 1995-10-25 1995-10-25 Method of forming alignment key pattern of bipolar device KR970023943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950037048A KR970023943A (en) 1995-10-25 1995-10-25 Method of forming alignment key pattern of bipolar device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950037048A KR970023943A (en) 1995-10-25 1995-10-25 Method of forming alignment key pattern of bipolar device

Publications (1)

Publication Number Publication Date
KR970023943A true KR970023943A (en) 1997-05-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950037048A KR970023943A (en) 1995-10-25 1995-10-25 Method of forming alignment key pattern of bipolar device

Country Status (1)

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KR (1) KR970023943A (en)

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