KR910005472A - DC manufacturing method of semiconductor device - Google Patents

DC manufacturing method of semiconductor device Download PDF

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Publication number
KR910005472A
KR910005472A KR1019890012017A KR890012017A KR910005472A KR 910005472 A KR910005472 A KR 910005472A KR 1019890012017 A KR1019890012017 A KR 1019890012017A KR 890012017 A KR890012017 A KR 890012017A KR 910005472 A KR910005472 A KR 910005472A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor device
grown
island
buried layer
Prior art date
Application number
KR1019890012017A
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Korean (ko)
Other versions
KR0151122B1 (en
Inventor
윤기완
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019890012017A priority Critical patent/KR0151122B1/en
Publication of KR910005472A publication Critical patent/KR910005472A/en
Application granted granted Critical
Publication of KR0151122B1 publication Critical patent/KR0151122B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices

Abstract

내용 없음No content

Description

반도체 소자의 DC 제조 방법DC manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 단면도.1 is a cross-sectional view of the present invention.

Claims (1)

P형 기판(1)과 에피층(2) 사이에 매몰층(3)을 형성하고 이 매몰층(3) 위의 DC가 될 부분에 산화물이나 Si3N₄등의 절연체를 사용하여 섬(4)을 만든 후 그위에 단결정 실리콘을 애피택셜 성장법으로 성장시켜 섬(4) 위의 DC 부위에서만 다결정 실리콘이 성장되게 하므로 불순물이 다결정 실리콘부(5)를 통하여 쉽게 확산되어 전도도가 높은 콜렉터 전극을 제조할 수 있게 함을 특징으로 하는 반도체 소자의 DC 제조 방법.The buried layer 3 is formed between the P-type substrate 1 and the epitaxial layer 2, and the island 4 is formed by using an insulator such as an oxide or Si 3 N₄ in the portion to be DC on the buried layer 3. After the crystal is grown, the single crystal silicon is grown on the epitaxial growth method so that the polycrystalline silicon is grown only at the DC region on the island (4). DC manufacturing method of a semiconductor device characterized by the above-mentioned. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890012017A 1989-08-23 1989-08-23 A method for making a bipolar device KR0151122B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890012017A KR0151122B1 (en) 1989-08-23 1989-08-23 A method for making a bipolar device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890012017A KR0151122B1 (en) 1989-08-23 1989-08-23 A method for making a bipolar device

Publications (2)

Publication Number Publication Date
KR910005472A true KR910005472A (en) 1991-03-30
KR0151122B1 KR0151122B1 (en) 1998-10-01

Family

ID=19289169

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890012017A KR0151122B1 (en) 1989-08-23 1989-08-23 A method for making a bipolar device

Country Status (1)

Country Link
KR (1) KR0151122B1 (en)

Also Published As

Publication number Publication date
KR0151122B1 (en) 1998-10-01

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