ATE133007T1 - Diamantdiodenstruktur - Google Patents
DiamantdiodenstrukturInfo
- Publication number
- ATE133007T1 ATE133007T1 AT90307676T AT90307676T ATE133007T1 AT E133007 T1 ATE133007 T1 AT E133007T1 AT 90307676 T AT90307676 T AT 90307676T AT 90307676 T AT90307676 T AT 90307676T AT E133007 T1 ATE133007 T1 AT E133007T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- implanted region
- implanted
- diode structure
- diamond diode
- Prior art date
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 2
- 239000010432 diamond Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Bipolar Transistors (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ZA895334 | 1989-07-13 | ||
| ZA903054 | 1990-04-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE133007T1 true ATE133007T1 (de) | 1996-01-15 |
Family
ID=27140304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT90307676T ATE133007T1 (de) | 1989-07-13 | 1990-07-13 | Diamantdiodenstruktur |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0413435B1 (de) |
| JP (1) | JP2963735B2 (de) |
| AT (1) | ATE133007T1 (de) |
| AU (1) | AU635047B2 (de) |
| CA (1) | CA2021020A1 (de) |
| DE (1) | DE69024720T2 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0456682B1 (de) * | 1989-02-01 | 1994-12-07 | Gersan Establishment | P-n-p-diamanttransistor |
| JP2836790B2 (ja) * | 1991-01-08 | 1998-12-14 | 株式会社神戸製鋼所 | ダイヤモンド薄膜へのオーミック電極形成方法 |
| DE4322830A1 (de) * | 1993-07-08 | 1995-01-19 | Bernd Burchard | Diodenstruktur aus Diamant |
| EP0904600B1 (de) * | 1996-06-10 | 2003-05-07 | De Beers Industrial Diamond Division (Pty) Limited | Methode für die herstellung eines kontakts zu einem diamanten |
| KR101064982B1 (ko) * | 2009-06-15 | 2011-09-15 | 반도산업 주식회사 | 낙하방지용 행거 및 행거용 홀더 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1599668A (en) * | 1977-06-02 | 1981-10-07 | Nat Res Dev | Semiconductors |
| US4571447A (en) * | 1983-06-24 | 1986-02-18 | Prins Johan F | Photovoltaic cell of semi-conducting diamond |
| ZA874362B (en) * | 1986-06-20 | 1988-02-24 | De Beers Ind Diamond | Forming contacts on diamonds |
| DE3818719C2 (de) * | 1987-06-02 | 2000-03-23 | Sumitomo Electric Industries | Halbleitender Diamant vom n-Typ und Verfahren zu dessen Herstellung |
-
1990
- 1990-07-12 CA CA002021020A patent/CA2021020A1/en not_active Abandoned
- 1990-07-13 EP EP90307676A patent/EP0413435B1/de not_active Expired - Lifetime
- 1990-07-13 AU AU59013/90A patent/AU635047B2/en not_active Ceased
- 1990-07-13 DE DE69024720T patent/DE69024720T2/de not_active Expired - Fee Related
- 1990-07-13 AT AT90307676T patent/ATE133007T1/de not_active IP Right Cessation
- 1990-07-13 JP JP18695190A patent/JP2963735B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU635047B2 (en) | 1993-03-11 |
| EP0413435A3 (en) | 1991-07-24 |
| AU5901390A (en) | 1991-01-17 |
| DE69024720D1 (de) | 1996-02-22 |
| EP0413435A2 (de) | 1991-02-20 |
| JP2963735B2 (ja) | 1999-10-18 |
| CA2021020A1 (en) | 1991-01-14 |
| DE69024720T2 (de) | 1996-07-25 |
| EP0413435B1 (de) | 1996-01-10 |
| JPH03129883A (ja) | 1991-06-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |