PL3345230T3 - Podwójny perowskit - Google Patents

Podwójny perowskit

Info

Publication number
PL3345230T3
PL3345230T3 PL16762840T PL16762840T PL3345230T3 PL 3345230 T3 PL3345230 T3 PL 3345230T3 PL 16762840 T PL16762840 T PL 16762840T PL 16762840 T PL16762840 T PL 16762840T PL 3345230 T3 PL3345230 T3 PL 3345230T3
Authority
PL
Poland
Prior art keywords
perowskit
double
double perowskit
Prior art date
Application number
PL16762840T
Other languages
English (en)
Inventor
Henry James Snaith
Amir Abbas HAGIGHIRAD
Feliciano Giustino
Marina FILIP
George VOLONAKIS
Original Assignee
Oxford University Innovation Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB1515546.8A external-priority patent/GB201515546D0/en
Priority claimed from GBGB1603804.4A external-priority patent/GB201603804D0/en
Application filed by Oxford University Innovation Limited filed Critical Oxford University Innovation Limited
Publication of PL3345230T3 publication Critical patent/PL3345230T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C01G29/006—Compounds containing bismuth, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/006—Halides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
    • C08G18/44—Polycarbonates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G64/00—Macromolecular compounds obtained by reactions forming a carbonic ester link in the main chain of the macromolecule
    • C08G64/02—Aliphatic polycarbonates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G64/00—Macromolecular compounds obtained by reactions forming a carbonic ester link in the main chain of the macromolecule
    • C08G64/02—Aliphatic polycarbonates
    • C08G64/0208—Aliphatic polycarbonates saturated
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G64/00—Macromolecular compounds obtained by reactions forming a carbonic ester link in the main chain of the macromolecule
    • C08G64/20—General preparatory processes
    • C08G64/30—General preparatory processes using carbonates
    • C08G64/305—General preparatory processes using carbonates and alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G64/00—Macromolecular compounds obtained by reactions forming a carbonic ester link in the main chain of the macromolecule
    • C08G64/40—Post-polymerisation treatment
    • C08G64/403—Recovery of the polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0036—Formation of the solid electrolyte layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2018—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte characterised by the ionic charge transport species, e.g. redox shuttles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
PL16762840T 2015-09-02 2016-08-31 Podwójny perowskit PL3345230T3 (pl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB1515546.8A GB201515546D0 (en) 2015-09-02 2015-09-02 Double perovskite
GBGB1603804.4A GB201603804D0 (en) 2016-03-04 2016-03-04 Double perovskite
PCT/GB2016/052691 WO2017037448A1 (en) 2015-09-02 2016-08-31 Double perovskite
EP16762840.3A EP3345230B1 (en) 2015-09-02 2016-08-31 Double perovskite

Publications (1)

Publication Number Publication Date
PL3345230T3 true PL3345230T3 (pl) 2022-05-30

Family

ID=56883818

Family Applications (1)

Application Number Title Priority Date Filing Date
PL16762840T PL3345230T3 (pl) 2015-09-02 2016-08-31 Podwójny perowskit

Country Status (7)

Country Link
US (3) US10927013B2 (pl)
EP (1) EP3345230B1 (pl)
CN (2) CN108028320B (pl)
AU (1) AU2016316984B2 (pl)
ES (1) ES2908912T3 (pl)
PL (1) PL3345230T3 (pl)
WO (1) WO2017037448A1 (pl)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535791B2 (en) 2014-12-03 2020-01-14 The Board Of Trustees Of The Leland Stanford Junior University 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction
US10522774B2 (en) 2015-10-22 2019-12-31 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising an oxide-nanoparticle buffer layer and method of fabrication
US20170194101A1 (en) * 2015-12-31 2017-07-06 The Board Of Trustees Of The Leland Stanford Junior University HALIDE DOUBLE PEROVSKITE Cs2AgBiBr6 SOLAR-CELL ABSORBER HAVING LONG CARRIER LIFETIMES
US11296244B2 (en) 2016-09-20 2022-04-05 The Board Of Trustees Of The Leland Stanford Junior University Solar cell comprising a metal-oxide buffer layer and method of fabrication
US11271123B2 (en) 2017-03-27 2022-03-08 The Board Of Trustees Of The Leland Stanford Junior University Alloyed halide double perovskites as solar-cell absorbers
CN107418558B (zh) * 2017-06-20 2019-05-31 东南大学 一种环保型双金属钙钛矿量子点的制备方法
CN107492594A (zh) * 2017-08-01 2017-12-19 重庆大学 一种基于油墨打印工艺的无铅钙钛矿晶体薄膜的制备方法
IT201700102364A1 (it) * 2017-09-13 2019-03-13 Univ Degli Studi Milano Bicocca Concentratore solare luminescente a base di perovskiti
CN107934916B (zh) * 2017-11-16 2020-10-20 中山大学 一种稳定无铅的全无机双钙钛矿a2bb’x6纳米晶的制备方法
CN108258119A (zh) * 2018-01-10 2018-07-06 中国科学院半导体研究所 无机卤化铋钙钛矿电池及其制备方法
WO2019195517A1 (en) * 2018-04-05 2019-10-10 The Florida State University Research Foundation, Inc. Perovskite-polymer composite materials, devices, and methods
WO2019195873A1 (en) * 2018-04-11 2019-10-17 Newsouth Innovations Pty Limited A method of forming a perovskite
US11046589B2 (en) * 2018-04-27 2021-06-29 Huazhong University Of Science And Technology Multi-element perovskite material as well as preparation and luminescent application thereof
GB201811539D0 (en) 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Fabrication process for a/m/x materials
GB201811537D0 (en) 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Turnable blue emitting lead halide perovskites
GB201811538D0 (en) 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Stabilised a/m/x materials
CN110767807A (zh) * 2018-07-27 2020-02-07 中国科学院长春光学精密机械与物理研究所 具有通过使用钙钛矿薄单晶形成的光敏场效应晶体管
CN109411554B (zh) * 2018-09-10 2021-02-05 暨南大学 一种阴阳离子共掺杂无机钙钛矿薄膜及其制备方法与应用
CN109369725A (zh) * 2018-09-20 2019-02-22 西安交通大学 一种无铅杂化二维双钙钛矿材料及制备方法
GB201817166D0 (en) 2018-10-22 2018-12-05 Univ Oxford Innovation Ltd Multi-junction device production process
GB201819380D0 (en) 2018-11-28 2019-01-09 Univ Oxford Innovation Ltd Long-term stable optoelectronic device
CN111252801A (zh) * 2018-11-30 2020-06-09 中国科学院大连化学物理研究所 一种双钙钛矿Cs2AgSbBr6纳米晶体及合成和应用
GB201820427D0 (en) 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
CN109786486A (zh) * 2018-12-27 2019-05-21 暨南大学 一种双钙钛矿单晶光电探测器及其制备方法
EP3709373B1 (en) * 2019-03-15 2022-11-09 Oxford University Innovation Limited Double perovskite
CN109824086B (zh) * 2019-04-04 2021-10-22 吉林大学 一种Na掺杂Cs2SbAgCl6双层钙钛矿纳米材料的制备方法
CN110649165B (zh) * 2019-04-04 2024-06-04 中茂光伏科技集团有限公司 一种以四苯基联苯二胺衍生物为空穴传输材料的钙钛矿电池
GB201908334D0 (en) 2019-06-11 2019-07-24 Univ Oxford Innovation Ltd Optoelectronic device
US11479477B2 (en) * 2019-06-26 2022-10-25 The Governors Of The University Of Alberta Copper-doped double perovskites and uses thereof
JP7112380B2 (ja) * 2019-09-25 2022-08-03 富士フイルム株式会社 光電変換素子及び太陽電池、光吸収剤、並びに、発光素子
CN112661792B (zh) * 2019-10-16 2022-11-29 中国科学院大连化学物理研究所 一种二维银铋卤化物双钙钛矿材料及合成和应用
CN110862702B (zh) * 2019-11-05 2021-07-30 南京邮电大学 无铅锡基卤化物钙钛矿薄膜、其制备方法及其应用
CN112798545B (zh) * 2019-11-13 2022-03-29 中国科学院大连化学物理研究所 一种吸收光谱连续可调的无机钙钛矿材料及其制备和应用
WO2021095052A1 (en) * 2019-11-15 2021-05-20 Indian Institute Of Technology Madras White light emission from single semiconductor material based on trivalent mixed halide double perovskites
CN111138294A (zh) * 2019-12-03 2020-05-12 山东大学 一种新型二维双钙钛矿BA4AgSbBr8单晶的制备方法
DE102020131892A1 (de) * 2019-12-06 2021-06-10 Honda Motor Co., Ltd. Pb-freie perowskit-materialien für kurzwellige ir-vorrichtungen
US12349585B2 (en) 2019-12-06 2025-07-01 Honda Motor Co., Ltd. Pb-free perovskite materials for short wave IR devices
CN111816765A (zh) * 2020-06-23 2020-10-23 北京航空航天大学 一种多枝状类雪花片结构的金属卤化物钙钛矿忆阻器
FR3111919B1 (fr) * 2020-06-30 2022-08-26 Commissariat Energie Atomique Procede de depot d’une couche de perovskite inorganique
KR20230068438A (ko) 2020-09-22 2023-05-17 케일룩스 코포레이션 통합 탠덤 태양광 모듈 제작을 위한 방법 및 소자
CN116868353A (zh) * 2020-10-12 2023-10-10 普林斯顿大学理事会 Uv吸收透明钙钛矿
FR3118066B1 (fr) * 2020-12-21 2023-07-21 Commissariat Energie Atomique Procede de depot d’une couche de perovskite organique ou hybride organique/inorganique
CN113192843B (zh) * 2021-04-06 2022-11-08 电子科技大学 一种新型非铅基钙钛矿薄膜的制备方法及其应用
EP4350791A4 (en) * 2021-05-26 2024-09-18 Panasonic Intellectual Property Management Co., Ltd. ELECTRONIC COMPOUND AND DEVICE AND LIGHT-EMITTING ELEMENT USING SAME
CN113999121A (zh) * 2021-10-12 2022-02-01 山西大学 窄带隙、无铅、稳定和光电性能优异的dj二维双钙钛矿
CN114686987B (zh) * 2022-03-21 2023-12-19 中国科学院福建物质结构研究所 一种二维有机-无机杂化双钙钛矿半导体晶体及其制备方法和用途
CN114716324B (zh) * 2022-04-26 2023-07-28 福州大学 有机无机杂化金属卤化物钙钛矿化合物、制备方法及应用
CN115172608B (zh) * 2022-06-23 2024-09-03 鄂尔多斯市瀚博科技有限公司 一种类钙钛矿吸光薄膜及其制备方法和应用
GB202318485D0 (en) 2023-12-04 2024-01-17 Univ Oxford Innovation Ltd Passivation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478879A (en) 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
US4927770A (en) 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
KR20150135202A (ko) * 2012-12-20 2015-12-02 이슘 리서치 디벨롭먼트 컴퍼니 오브 더 히브루 유니버시티 오브 예루살렘, 엘티디. 페로브스카이트 쇼트키 타입 태양 전지
JP6047525B2 (ja) * 2013-07-31 2016-12-21 富士フイルム株式会社 光電変換素子および太陽電池
KR102283435B1 (ko) * 2013-09-03 2021-07-30 바스프 에스이 무정형 물질 및 이의 용도
JP2016529737A (ja) * 2013-09-04 2016-09-23 ダイソル・リミテッドＤｙｅｓｏｌ Ｌｔｄ 光起電力デバイス
US20160155974A1 (en) * 2014-12-01 2016-06-02 The Regents Of The University Of California Complex pnictide metal halides for optoelectronic applications
US10192689B2 (en) * 2015-01-07 2019-01-29 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Self-assembly of perovskite for fabrication of transparent devices
EP3244455B1 (en) * 2015-01-08 2025-07-16 Korea Research Institute of Chemical Technology Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film
CN107750261A (zh) * 2015-06-19 2018-03-02 默克专利有限公司 含有基于苯并二噻吩的化合物以及特殊光吸收剂的光电装置

Also Published As

Publication number Publication date
AU2016316984A1 (en) 2018-04-12
US20240043282A1 (en) 2024-02-08
EP3345230A1 (en) 2018-07-11
US11820670B2 (en) 2023-11-21
AU2016316984B2 (en) 2021-11-25
US20180290897A1 (en) 2018-10-11
CN108028320B (zh) 2023-08-11
US20210230014A1 (en) 2021-07-29
US10927013B2 (en) 2021-02-23
ES2908912T3 (es) 2022-05-04
CN116963570A (zh) 2023-10-27
CN108028320A (zh) 2018-05-11
WO2017037448A1 (en) 2017-03-09
EP3345230B1 (en) 2022-02-09

Similar Documents

Publication Publication Date Title
PL3345230T3 (pl) Podwójny perowskit
DK3283625T3 (da) Nukleasemedieret genomeditering
DK3331869T3 (da) Muscarinagonister
DK3331528T3 (da) Muskarinagonister
DK3277719T3 (da) Polypeptider
EP3316375A4 (en) Redox flow cell
DK3305788T3 (da) Janus-kinase-hæmmer
DK3331529T3 (da) Muskarinagonister
DK3310450T3 (da) Olie-vand-separator
DK3270930T3 (da) Præeklampsi
EP3381654A4 (en) Liquid blow molding method
EP3393959A4 (en) GRAB
DK3394281T3 (da) Gærcelle
EP3363322A4 (en) Hair extender
DE112015006486A5 (de) Inkubationsrinne
EP3390373C0 (en) DOTA SUMMARY
DK3274482T3 (da) Stenborsknop
EP3377179A4 (en) DEUTERED EPI-743
EP3548009A4 (en) POLYMERIC NANOPARTICLES
DE102015206660A8 (de) Plattenaufteilanlage
DK3318308T3 (da) Badmintonketsjer
DE112015005904A5 (de) Gurtschlossbringer
DE112016005599A5 (de) Strahlungsgrill
EP3308871A4 (en) CRIMPING DEVICE
ES1140083Y (es) Descompatactador tetrafunción