FR3111919B1 - Procede de depot d’une couche de perovskite inorganique - Google Patents

Procede de depot d’une couche de perovskite inorganique Download PDF

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Publication number
FR3111919B1
FR3111919B1 FR2006842A FR2006842A FR3111919B1 FR 3111919 B1 FR3111919 B1 FR 3111919B1 FR 2006842 A FR2006842 A FR 2006842A FR 2006842 A FR2006842 A FR 2006842A FR 3111919 B1 FR3111919 B1 FR 3111919B1
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France
Prior art keywords
depositing
layer
inorganic perovskite
target
substrate
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Active
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FR2006842A
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English (en)
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FR3111919A1 (fr
Inventor
Louis Grenet
Fabrice Emieux
Jean-Marie Verilhac
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR2006842A priority Critical patent/FR3111919B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to US18/003,023 priority patent/US20230242812A1/en
Priority to PCT/FR2021/051130 priority patent/WO2022003271A1/fr
Priority to JP2022581609A priority patent/JP2023534160A/ja
Priority to CN202180058859.6A priority patent/CN116057211A/zh
Priority to KR1020237002992A priority patent/KR20230029908A/ko
Priority to EP21740153.8A priority patent/EP4172387A1/fr
Publication of FR3111919A1 publication Critical patent/FR3111919A1/fr
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Publication of FR3111919B1 publication Critical patent/FR3111919B1/fr
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00—Compounds of lead
    • C01G21/16—Halides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/664—Halogenides
    • C09K11/665—Halogenides with alkali or alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2023—Selection of materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Apparatus For Radiation Diagnosis (AREA)

Abstract

Procédé de dépôt d’une couche de pérovskite inorganique (1) comprenant les étapes suivantes : a) fournir un substrat (10) et une cible (20) inorganique, b) positionner le substrat (10) et la cible (20), dans un four de sublimation à faible distance (100), c) déposer une couche de pérovskite inorganique (1) sur le substrat (10) par sublimation de la cible (20). Figure pour l’abrégé : 1
FR2006842A 2020-06-30 2020-06-30 Procede de depot d’une couche de perovskite inorganique Active FR3111919B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR2006842A FR3111919B1 (fr) 2020-06-30 2020-06-30 Procede de depot d’une couche de perovskite inorganique
PCT/FR2021/051130 WO2022003271A1 (fr) 2020-06-30 2021-06-22 Procede de depot d'une couche de perovskite inorganique
JP2022581609A JP2023534160A (ja) 2020-06-30 2021-06-22 無機ペロブスカイト層を堆積させる方法
CN202180058859.6A CN116057211A (zh) 2020-06-30 2021-06-22 用于沉积无机钙钛矿层的方法
US18/003,023 US20230242812A1 (en) 2020-06-30 2021-06-22 Method for depositing an inorganic perovskite layer
KR1020237002992A KR20230029908A (ko) 2020-06-30 2021-06-22 무기 페로브스카이트 층의 증착 방법
EP21740153.8A EP4172387A1 (fr) 2020-06-30 2021-06-22 Procede de depot d'une couche de perovskite inorganique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2006842A FR3111919B1 (fr) 2020-06-30 2020-06-30 Procede de depot d’une couche de perovskite inorganique
FR2006842 2020-06-30

Publications (2)

Publication Number Publication Date
FR3111919A1 FR3111919A1 (fr) 2021-12-31
FR3111919B1 true FR3111919B1 (fr) 2022-08-26

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FR2006842A Active FR3111919B1 (fr) 2020-06-30 2020-06-30 Procede de depot d’une couche de perovskite inorganique

Country Status (7)

Country Link
US (1) US20230242812A1 (fr)
EP (1) EP4172387A1 (fr)
JP (1) JP2023534160A (fr)
KR (1) KR20230029908A (fr)
CN (1) CN116057211A (fr)
FR (1) FR3111919B1 (fr)
WO (1) WO2022003271A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113584436B (zh) * 2021-07-29 2023-06-06 郑州大学 一种基于非溶剂的钙钛矿薄膜、制备方法及应用
CN115000232A (zh) * 2022-06-16 2022-09-02 太原理工大学 一种基于Cs2AgBiBr6的近红外光电探测器及其制作方法
FR3141699A1 (fr) * 2022-11-03 2024-05-10 Trixell Procédé de dépôt d’une couche de matériaux inorganiques ou hybrides organiques/inorganiques sur un substrat
CN117119859B (zh) * 2023-10-18 2024-01-23 深圳市汉嵙新材料技术有限公司 钙钛矿太阳电池的制备装置及钙钛矿太阳电池的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2833410B1 (fr) * 2001-12-10 2004-03-19 Commissariat Energie Atomique Procede de realisation d'un dispositif d'imagerie
WO2017031193A1 (fr) 2015-08-20 2017-02-23 The Hong Kong University Of Science And Technology Matériaux pérovskites organiques-inorganiques et dispositifs optoélectroniques fabriqués par sublimation en espace fermé
CN109545985A (zh) * 2017-09-22 2019-03-29 杭州纤纳光电科技有限公司 一种提高钙钛矿成膜均匀性的装置及其方法
CN108832005B (zh) * 2018-06-25 2022-04-01 陕西师范大学 利用单源热蒸发法制备高效率CsPbBr3无机钙钛矿电池的方法
CN110016646B (zh) * 2019-03-25 2020-06-02 华中科技大学 一种用于高能射线探测的铅基卤素钙钛矿膜的制备方法

Also Published As

Publication number Publication date
CN116057211A (zh) 2023-05-02
EP4172387A1 (fr) 2023-05-03
WO2022003271A1 (fr) 2022-01-06
JP2023534160A (ja) 2023-08-08
US20230242812A1 (en) 2023-08-03
FR3111919A1 (fr) 2021-12-31
KR20230029908A (ko) 2023-03-03

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