NZ725497A - Magnetic materials and devices comprising rare earth nitrides - Google Patents
Magnetic materials and devices comprising rare earth nitridesInfo
- Publication number
- NZ725497A NZ725497A NZ725497A NZ72549715A NZ725497A NZ 725497 A NZ725497 A NZ 725497A NZ 725497 A NZ725497 A NZ 725497A NZ 72549715 A NZ72549715 A NZ 72549715A NZ 725497 A NZ725497 A NZ 725497A
- Authority
- NZ
- New Zealand
- Prior art keywords
- magnetic
- materials
- rare earth
- ferromagnetic layer
- ferromagnetic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3248—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NZ62334314 | 2014-04-02 | ||
| PCT/NZ2015/050038 WO2015152736A2 (en) | 2014-04-02 | 2015-03-31 | Magnetic materials and devices comprising rare earth nitrides |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NZ725497A true NZ725497A (en) | 2020-05-29 |
Family
ID=54241411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NZ725497A NZ725497A (en) | 2014-04-02 | 2015-03-31 | Magnetic materials and devices comprising rare earth nitrides |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10373752B2 (enExample) |
| EP (1) | EP3127125B1 (enExample) |
| JP (1) | JP6684224B2 (enExample) |
| KR (1) | KR102296108B1 (enExample) |
| CN (1) | CN106537624B (enExample) |
| NZ (1) | NZ725497A (enExample) |
| WO (1) | WO2015152736A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10229839B2 (en) * | 2016-04-29 | 2019-03-12 | The United States Of America, As Represented By The Secretary Of The Navy | Transition metal-bearing capping film for group III-nitride devices |
| TWI753915B (zh) | 2016-06-02 | 2022-02-01 | 英商Ｉｑｅ有限公司 | 用於GaN基底應用的磷屬化物緩衝結構和裝置 |
| JP7131835B2 (ja) * | 2016-12-07 | 2022-09-06 | ビクトリア リンク リミテッド | 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法 |
| WO2018204785A1 (en) * | 2017-05-04 | 2018-11-08 | Massachusetts Institute Of Technology | Multi-bit-per-cell memory device based on the unidirectional spin hall magnetoresistance |
| AU2018297668B2 (en) * | 2017-07-03 | 2023-11-16 | Victoria Link Limited | Ammonia production method and apparatus for ammonia production |
| US11121139B2 (en) * | 2017-11-16 | 2021-09-14 | International Business Machines Corporation | Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes |
| US11183227B1 (en) * | 2020-04-29 | 2021-11-23 | Regents Of The University Of Minnesota | Electric field switchable magnetic devices |
| US12581867B2 (en) * | 2022-10-26 | 2026-03-17 | Victoria Link Limited Trading As Wellington Univentures | Switchable magnetic device or dot for data storage |
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| US5611955A (en) | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| CA2311061C (en) | 1999-06-11 | 2009-10-06 | National Research Council Of Canada | Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7351993B2 (en) * | 2000-08-08 | 2008-04-01 | Translucent Photonics, Inc. | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| US7199015B2 (en) * | 2000-08-08 | 2007-04-03 | Translucent Photonics, Inc. | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| FR2829868A1 (fr) | 2001-09-20 | 2003-03-21 | Centre Nat Rech Scient | Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture |
| FR2829867B1 (fr) | 2001-09-20 | 2003-12-19 | Centre Nat Rech Scient | Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture |
| JP3592282B2 (ja) | 2001-10-01 | 2004-11-24 | キヤノン株式会社 | 磁気抵抗効果膜、およびそれを用いたメモリ |
| KR100492482B1 (ko) * | 2002-09-04 | 2005-06-03 | 한국과학기술연구원 | Ｐｅｍｂｅ로 제조된 상온 자성반도체 및 그 소자 |
| JP2004172218A (ja) | 2002-11-18 | 2004-06-17 | Sony Corp | 磁気記憶素子及びその記録方法、並びに磁気記憶装置 |
| US7170095B2 (en) | 2003-07-11 | 2007-01-30 | Cree Inc. | Semi-insulating GaN and method of making the same |
| US20050122828A1 (en) | 2003-09-29 | 2005-06-09 | Matsushita Electric Industrial Co., Ltd. | Magnetic switching device and memory using the same |
| US7271981B2 (en) | 2003-11-20 | 2007-09-18 | Seagate Technology Llc | Ultrafast pulse field source utilizing optically induced magnetic transformation |
| JP4792714B2 (ja) | 2003-11-28 | 2011-10-12 | ソニー株式会社 | 記憶素子及び記憶装置 |
| EP1697585A4 (en) | 2003-12-15 | 2009-04-08 | Univ Yale | MAGNETOELECTRONIC DEVICES BASED ON THIN-LAYERED FILMS WITH CMR (LARGE MAGNETO-RESISTOR) |
| JP4742502B2 (ja) | 2004-02-23 | 2011-08-10 | ソニー株式会社 | 磁気シールド体、磁気シールド構造及び磁気メモリ装置 |
| JP4830275B2 (ja) | 2004-07-22 | 2011-12-07 | ソニー株式会社 | 記憶素子 |
| JP2006080379A (ja) * | 2004-09-10 | 2006-03-23 | Sharp Corp | 異種結晶多層構造体ならびに異種結晶多層構造体を含む金属ベーストランジスタ、面発光レーザ、磁気抵抗膜および共鳴トンネルダイオード |
| WO2006030814A1 (ja) | 2004-09-14 | 2006-03-23 | Matsushita Electric Industrial Co., Ltd. | 抵抗変化素子及びそれを用いた不揮発性メモリ |
| US7313013B2 (en) | 2004-11-18 | 2007-12-25 | International Business Machines Corporation | Spin-current switchable magnetic memory element and method of fabricating the memory element |
| US7253080B1 (en) | 2005-02-09 | 2007-08-07 | Translucent Inc. | Silicon-on-insulator semiconductor wafer |
| US7037806B1 (en) | 2005-02-09 | 2006-05-02 | Translucent Inc. | Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride |
| JP2006269688A (ja) | 2005-03-23 | 2006-10-05 | National Institute Of Advanced Industrial & Technology | 不揮発性メモリ素子 |
| WO2006101152A1 (ja) | 2005-03-23 | 2006-09-28 | National Institute Of Advanced Industrial Science And Technology | 不揮発性メモリ素子 |
| US7489541B2 (en) | 2005-08-23 | 2009-02-10 | Grandis, Inc. | Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements |
| JP2007080311A (ja) | 2005-09-12 | 2007-03-29 | Sony Corp | 記憶装置及び半導体装置 |
| JP4719035B2 (ja) | 2006-03-13 | 2011-07-06 | 株式会社東芝 | 不揮発性半導体メモリ装置及びその製造方法 |
| US7518216B2 (en) | 2006-03-20 | 2009-04-14 | Sumitomo Electric Industries, Ltd. | Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride |
| US7816737B2 (en) | 2006-03-31 | 2010-10-19 | Tokyo Electron Limited | Semiconductor device with gate dielectric containing mixed rare earth elements |
| US8012442B2 (en) * | 2006-03-31 | 2011-09-06 | Tokyo Electron Limited | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition |
| US7466585B2 (en) | 2006-04-28 | 2008-12-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic random access memory |
| JP2008112845A (ja) * | 2006-10-30 | 2008-05-15 | Osaka Univ | 強磁性材料 |
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| JP5050813B2 (ja) | 2007-11-29 | 2012-10-17 | ソニー株式会社 | メモリセル |
| WO2009074411A1 (en) | 2007-12-13 | 2009-06-18 | Crocus Technology | Magnetic memory with a thermally assisted writing procedure |
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| US20100109018A1 (en) | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Method of fabricating semi-insulating gallium nitride using an aluminum gallium nitride blocking layer |
| JP5578448B2 (ja) | 2009-09-17 | 2014-08-27 | 富士電機株式会社 | 磁気抵抗素子及びそれを用いた不揮発性半導体記憶装置 |
| JP2013120798A (ja) * | 2011-12-06 | 2013-06-17 | Nissan Motor Co Ltd | 希土類磁石厚膜および低温固化成形方法 |
| JP2013135071A (ja) * | 2011-12-26 | 2013-07-08 | Nissan Motor Co Ltd | 希土類磁石成形体および低温固化成形方法 |
| US9496132B2 (en) * | 2012-03-20 | 2016-11-15 | Translucent, Inc. | Nucleation of III-N on REO templates |
| WO2013141953A2 (en) * | 2012-03-23 | 2013-09-26 | Massachusetts Institute Of Technology | Liquid-encapsulated rare-earth based ceramic surfaces |
| JP2015002297A (ja) * | 2013-06-17 | 2015-01-05 | 住友電気工業株式会社 | 磁性半導体素子、磁性半導体素子を作製する方法 |
| KR102328525B1 (ko) * | 2014-04-02 | 2021-11-19 | 프랭크 나탈리 | 도핑된 희토류 니트라이드 물질 및 이를 포함하는 장치 |
-
2015
- 2015-03-31 NZ NZ725497A patent/NZ725497A/en not_active IP Right Cessation
- 2015-03-31 CN CN201580027695.5A patent/CN106537624B/zh active Active
- 2015-03-31 US US15/300,753 patent/US10373752B2/en active Active
- 2015-03-31 EP EP15772637.3A patent/EP3127125B1/en not_active Not-in-force
- 2015-03-31 KR KR1020167030672A patent/KR102296108B1/ko not_active Expired - Fee Related
- 2015-03-31 JP JP2016560768A patent/JP6684224B2/ja active Active
- 2015-03-31 WO PCT/NZ2015/050038 patent/WO2015152736A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN106537624A (zh) | 2017-03-22 |
| WO2015152736A2 (en) | 2015-10-08 |
| EP3127125A4 (en) | 2018-01-10 |
| US20170018346A1 (en) | 2017-01-19 |
| WO2015152736A3 (en) | 2016-01-14 |
| KR20160147791A (ko) | 2016-12-23 |
| JP2017513231A (ja) | 2017-05-25 |
| KR102296108B1 (ko) | 2021-09-02 |
| JP6684224B2 (ja) | 2020-04-22 |
| US10373752B2 (en) | 2019-08-06 |
| EP3127125B1 (en) | 2022-03-30 |
| EP3127125A2 (en) | 2017-02-08 |
| CN106537624B (zh) | 2020-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PSEA | Patent sealed | ||
| RENW | Renewal (renewal fees accepted) |
Free format text: PATENT RENEWED FOR 1 YEAR UNTIL 31 MAR 2022 BY BIRGIT KNAACK Effective date: 20210313 |
|
| RENW | Renewal (renewal fees accepted) |
Free format text: PATENT RENEWED FOR 1 YEAR UNTIL 31 MAR 2023 BY CPA GLOBAL Effective date: 20220217 |
|
| LAPS | Patent lapsed |