CN106537624B - 包含稀土氮化物的磁性材料和设备 - Google Patents

包含稀土氮化物的磁性材料和设备 Download PDF

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CN106537624B
CN106537624B CN201580027695.5A CN201580027695A CN106537624B CN 106537624 B CN106537624 B CN 106537624B CN 201580027695 A CN201580027695 A CN 201580027695A CN 106537624 B CN106537624 B CN 106537624B
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rare earth
ferromagnetic
layer
ferromagnetic layer
magnetic material
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CN106537624A (zh
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S·E·格兰维尔
E·J·安东
F·纳塔利
B·J·鲁克
H·J·特罗达尔
J·F·麦克纳尔蒂
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
CN201580027695.5A 2014-04-02 2015-03-31 包含稀土氮化物的磁性材料和设备 Active CN106537624B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NZ62334314 2014-04-02
NZ623343 2014-04-02
PCT/NZ2015/050038 WO2015152736A2 (en) 2014-04-02 2015-03-31 Magnetic materials and devices comprising rare earth nitrides

Publications (2)

Publication Number Publication Date
CN106537624A CN106537624A (zh) 2017-03-22
CN106537624B true CN106537624B (zh) 2020-09-25

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US (1) US10373752B2 (enExample)
EP (1) EP3127125B1 (enExample)
JP (1) JP6684224B2 (enExample)
KR (1) KR102296108B1 (enExample)
CN (1) CN106537624B (enExample)
NZ (1) NZ725497A (enExample)
WO (1) WO2015152736A2 (enExample)

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US10229839B2 (en) * 2016-04-29 2019-03-12 The United States Of America, As Represented By The Secretary Of The Navy Transition metal-bearing capping film for group III-nitride devices
WO2017210597A1 (en) 2016-06-02 2017-12-07 IQE, plc Rare earth pnictides for strain management
KR20190088556A (ko) * 2016-12-07 2019-07-26 빅토리아 링크 엘티디 희토류 질화물 구조체와 소자 및 패시베이션 캐핑 제거방법
WO2018204785A1 (en) * 2017-05-04 2018-11-08 Massachusetts Institute Of Technology Multi-bit-per-cell memory device based on the unidirectional spin hall magnetoresistance
JP7146287B2 (ja) * 2017-07-03 2022-10-04 ビクトリア リンク リミテッド アンモニアの製造方法およびアンモニア製造のための装置
US11121139B2 (en) * 2017-11-16 2021-09-14 International Business Machines Corporation Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes
US11183227B1 (en) 2020-04-29 2021-11-23 Regents Of The University Of Minnesota Electric field switchable magnetic devices
US12581867B2 (en) * 2022-10-26 2026-03-17 Victoria Link Limited Trading As Wellington Univentures Switchable magnetic device or dot for data storage

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Also Published As

Publication number Publication date
WO2015152736A3 (en) 2016-01-14
EP3127125A4 (en) 2018-01-10
JP2017513231A (ja) 2017-05-25
KR20160147791A (ko) 2016-12-23
US20170018346A1 (en) 2017-01-19
EP3127125B1 (en) 2022-03-30
KR102296108B1 (ko) 2021-09-02
NZ725497A (en) 2020-05-29
EP3127125A2 (en) 2017-02-08
CN106537624A (zh) 2017-03-22
JP6684224B2 (ja) 2020-04-22
WO2015152736A2 (en) 2015-10-08
US10373752B2 (en) 2019-08-06

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