CN106537624B - 包含稀土氮化物的磁性材料和设备 - Google Patents

包含稀土氮化物的磁性材料和设备 Download PDF

Info

Publication number
CN106537624B
CN106537624B CN201580027695.5A CN201580027695A CN106537624B CN 106537624 B CN106537624 B CN 106537624B CN 201580027695 A CN201580027695 A CN 201580027695A CN 106537624 B CN106537624 B CN 106537624B
Authority
CN
China
Prior art keywords
rare earth
ferromagnetic
layer
ferromagnetic layer
magnetic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580027695.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN106537624A (zh
Inventor
S·E·格兰维尔
E·J·安东
F·纳塔利
B·J·鲁克
H·J·特罗达尔
J·F·麦克纳尔蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CN106537624A publication Critical patent/CN106537624A/zh
Application granted granted Critical
Publication of CN106537624B publication Critical patent/CN106537624B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
CN201580027695.5A 2014-04-02 2015-03-31 包含稀土氮化物的磁性材料和设备 Active CN106537624B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NZ62334314 2014-04-02
NZ623343 2014-04-02
PCT/NZ2015/050038 WO2015152736A2 (en) 2014-04-02 2015-03-31 Magnetic materials and devices comprising rare earth nitrides

Publications (2)

Publication Number Publication Date
CN106537624A CN106537624A (zh) 2017-03-22
CN106537624B true CN106537624B (zh) 2020-09-25

Family

ID=54241411

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580027695.5A Active CN106537624B (zh) 2014-04-02 2015-03-31 包含稀土氮化物的磁性材料和设备

Country Status (7)

Country Link
US (1) US10373752B2 (enExample)
EP (1) EP3127125B1 (enExample)
JP (1) JP6684224B2 (enExample)
KR (1) KR102296108B1 (enExample)
CN (1) CN106537624B (enExample)
NZ (1) NZ725497A (enExample)
WO (1) WO2015152736A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10229839B2 (en) * 2016-04-29 2019-03-12 The United States Of America, As Represented By The Secretary Of The Navy Transition metal-bearing capping film for group III-nitride devices
TWI753915B (zh) 2016-06-02 2022-02-01 英商Ｉｑｅ有限公司 用於GaN基底應用的磷屬化物緩衝結構和裝置
JP7131835B2 (ja) * 2016-12-07 2022-09-06 ビクトリア リンク リミテッド 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法
WO2018204785A1 (en) * 2017-05-04 2018-11-08 Massachusetts Institute Of Technology Multi-bit-per-cell memory device based on the unidirectional spin hall magnetoresistance
AU2018297668B2 (en) * 2017-07-03 2023-11-16 Victoria Link Limited Ammonia production method and apparatus for ammonia production
US11121139B2 (en) * 2017-11-16 2021-09-14 International Business Machines Corporation Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes
US11183227B1 (en) * 2020-04-29 2021-11-23 Regents Of The University Of Minnesota Electric field switchable magnetic devices
US12581867B2 (en) * 2022-10-26 2026-03-17 Victoria Link Limited Trading As Wellington Univentures Switchable magnetic device or dot for data storage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200603101A (en) * 2004-02-23 2006-01-16 Sony Corp Magnetic shield member, magnetic shield structure, and magnetic memory device

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5611955A (en) 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
CA2311061C (en) 1999-06-11 2009-10-06 National Research Council Of Canada Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan
US7316837B2 (en) 2000-07-21 2008-01-08 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7351993B2 (en) * 2000-08-08 2008-04-01 Translucent Photonics, Inc. Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
US7199015B2 (en) * 2000-08-08 2007-04-03 Translucent Photonics, Inc. Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
FR2829868A1 (fr) 2001-09-20 2003-03-21 Centre Nat Rech Scient Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
FR2829867B1 (fr) 2001-09-20 2003-12-19 Centre Nat Rech Scient Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture
JP3592282B2 (ja) 2001-10-01 2004-11-24 キヤノン株式会社 磁気抵抗効果膜、およびそれを用いたメモリ
KR100492482B1 (ko) * 2002-09-04 2005-06-03 한국과학기술연구원 Ｐｅｍｂｅ로 제조된 상온 자성반도체 및 그 소자
JP2004172218A (ja) 2002-11-18 2004-06-17 Sony Corp 磁気記憶素子及びその記録方法、並びに磁気記憶装置
US7170095B2 (en) 2003-07-11 2007-01-30 Cree Inc. Semi-insulating GaN and method of making the same
US20050122828A1 (en) 2003-09-29 2005-06-09 Matsushita Electric Industrial Co., Ltd. Magnetic switching device and memory using the same
US7271981B2 (en) 2003-11-20 2007-09-18 Seagate Technology Llc Ultrafast pulse field source utilizing optically induced magnetic transformation
JP4792714B2 (ja) 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
EP1697585A4 (en) 2003-12-15 2009-04-08 Univ Yale MAGNETOELECTRONIC DEVICES BASED ON THIN-LAYERED FILMS WITH CMR (LARGE MAGNETO-RESISTOR)
JP4830275B2 (ja) 2004-07-22 2011-12-07 ソニー株式会社 記憶素子
JP2006080379A (ja) * 2004-09-10 2006-03-23 Sharp Corp 異種結晶多層構造体ならびに異種結晶多層構造体を含む金属ベーストランジスタ、面発光レーザ、磁気抵抗膜および共鳴トンネルダイオード
WO2006030814A1 (ja) 2004-09-14 2006-03-23 Matsushita Electric Industrial Co., Ltd. 抵抗変化素子及びそれを用いた不揮発性メモリ
US7313013B2 (en) 2004-11-18 2007-12-25 International Business Machines Corporation Spin-current switchable magnetic memory element and method of fabricating the memory element
US7253080B1 (en) 2005-02-09 2007-08-07 Translucent Inc. Silicon-on-insulator semiconductor wafer
US7037806B1 (en) 2005-02-09 2006-05-02 Translucent Inc. Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride
JP2006269688A (ja) 2005-03-23 2006-10-05 National Institute Of Advanced Industrial & Technology 不揮発性メモリ素子
WO2006101152A1 (ja) 2005-03-23 2006-09-28 National Institute Of Advanced Industrial Science And Technology 不揮発性メモリ素子
US7489541B2 (en) 2005-08-23 2009-02-10 Grandis, Inc. Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
JP2007080311A (ja) 2005-09-12 2007-03-29 Sony Corp 記憶装置及び半導体装置
JP4719035B2 (ja) 2006-03-13 2011-07-06 株式会社東芝 不揮発性半導体メモリ装置及びその製造方法
US7518216B2 (en) 2006-03-20 2009-04-14 Sumitomo Electric Industries, Ltd. Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride
US7816737B2 (en) 2006-03-31 2010-10-19 Tokyo Electron Limited Semiconductor device with gate dielectric containing mixed rare earth elements
US8012442B2 (en) * 2006-03-31 2011-09-06 Tokyo Electron Limited Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
US7466585B2 (en) 2006-04-28 2008-12-16 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic random access memory
JP2008112845A (ja) * 2006-10-30 2008-05-15 Osaka Univ 強磁性材料
JP2008274342A (ja) 2007-04-27 2008-11-13 Tosoh Corp プラズマ耐蝕性材料およびそれを含んでなる部材
JP5050813B2 (ja) 2007-11-29 2012-10-17 ソニー株式会社 メモリセル
WO2009074411A1 (en) 2007-12-13 2009-06-18 Crocus Technology Magnetic memory with a thermally assisted writing procedure
US8536614B2 (en) 2008-01-11 2013-09-17 Industrial Technology Research Institute Nitride semiconductor light emitting device with magnetic film
US7920416B2 (en) 2008-03-12 2011-04-05 International Business Machines Corporation Increased magnetic damping for toggle MRAM
US20100109018A1 (en) 2008-10-31 2010-05-06 The Regents Of The University Of California Method of fabricating semi-insulating gallium nitride using an aluminum gallium nitride blocking layer
JP5578448B2 (ja) 2009-09-17 2014-08-27 富士電機株式会社 磁気抵抗素子及びそれを用いた不揮発性半導体記憶装置
JP2013120798A (ja) * 2011-12-06 2013-06-17 Nissan Motor Co Ltd 希土類磁石厚膜および低温固化成形方法
JP2013135071A (ja) * 2011-12-26 2013-07-08 Nissan Motor Co Ltd 希土類磁石成形体および低温固化成形方法
US9496132B2 (en) * 2012-03-20 2016-11-15 Translucent, Inc. Nucleation of III-N on REO templates
WO2013141953A2 (en) * 2012-03-23 2013-09-26 Massachusetts Institute Of Technology Liquid-encapsulated rare-earth based ceramic surfaces
JP2015002297A (ja) * 2013-06-17 2015-01-05 住友電気工業株式会社 磁性半導体素子、磁性半導体素子を作製する方法
KR102328525B1 (ko) * 2014-04-02 2021-11-19 프랭크 나탈리 도핑된 희토류 니트라이드 물질 및 이를 포함하는 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200603101A (en) * 2004-02-23 2006-01-16 Sony Corp Magnetic shield member, magnetic shield structure, and magnetic memory device

Also Published As

Publication number Publication date
CN106537624A (zh) 2017-03-22
WO2015152736A2 (en) 2015-10-08
NZ725497A (en) 2020-05-29
EP3127125A4 (en) 2018-01-10
US20170018346A1 (en) 2017-01-19
WO2015152736A3 (en) 2016-01-14
KR20160147791A (ko) 2016-12-23
JP2017513231A (ja) 2017-05-25
KR102296108B1 (ko) 2021-09-02
JP6684224B2 (ja) 2020-04-22
US10373752B2 (en) 2019-08-06
EP3127125B1 (en) 2022-03-30
EP3127125A2 (en) 2017-02-08

Similar Documents

Publication Publication Date Title
JP6684224B2 (ja) 希土類窒化物を含む磁性材料およびデバイス
US10878985B2 (en) Spin orbit torque generating materials
CN110970551B (zh) 用于具有体积单轴磁结晶各向异性的磁性层的自旋转移力矩切换的装置和方法
US7252852B1 (en) Mg-Zn oxide tunnel barriers and method of formation
US7276384B2 (en) Magnetic tunnel junctions with improved tunneling magneto-resistance
US11557721B2 (en) Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)
CN105826462B (zh) 用于霍斯勒化合物的织构化膜的底层
KR102751409B1 (ko) 스핀궤도 토크(spin-orbit torque, SOT) 기반 자기 터널 접합 및 이의 제조 방법
KR102560822B1 (ko) 스핀궤도 토크(spin-orbit torque, SOT) 기반 자기 터널 접합 및 이의 제조 방법
KR102928653B1 (ko) 메모리 장치 및 그 제조 방법
CN106460229B (zh) 掺杂的稀土氮化物材料和包含其的器件
US11121306B2 (en) Magnetic tunnel junction device with magnetic layer of easy-cone state
US9666215B2 (en) Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
Chen et al. Use of half metallic Heusler alloys in CoFeB/MgO/Heusler alloy tunnel junctions
Zhang et al. Positive and negative magnetoresistance in Fe3O4-based heterostructures
JP2010126733A (ja) Ｃｏ基ホイスラー合金とこれを用いた磁性素子。
Rai et al. Influence of rare earth Ho3+ doping on structural, microstructure and magnetic properties of ZnO bulk and thin film systems
Kurt et al. Magnetic and electronic properties of thin films of Mn-Ga and Mn-Ge compounds with cubic, tetragonal and hexagonal crystal structures
Ebke et al. X-Ray Absorption and Magnetic Circular Dichroism Studies of Co $ _ {2} $ FeAl in Magnetic Tunnel Junctions
Nahid et al. Structural and magnetic properties of Co2MnSi Heusler alloy thin films on Si
Rogge et al. Co $ _2 $ FeSi Based Magnetic Tunnel Junctions With BaO Barrier
JP2023105503A (ja) 磁性薄膜およびその製造方法
JP2025117592A (ja) 多層薄膜およびその製造方法
Lau et al. Unexpected strong spin Hall effect in heavy-element-free paramagnetic CoGa
JP2020127005A (ja) 磁気抵抗効果素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant