KR102296108B1 - 희토류 나이트라이드를 포함하는 자성체 및 장치 - Google Patents

희토류 나이트라이드를 포함하는 자성체 및 장치 Download PDF

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KR102296108B1
KR102296108B1 KR1020167030672A KR20167030672A KR102296108B1 KR 102296108 B1 KR102296108 B1 KR 102296108B1 KR 1020167030672 A KR1020167030672 A KR 1020167030672A KR 20167030672 A KR20167030672 A KR 20167030672A KR 102296108 B1 KR102296108 B1 KR 102296108B1
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ferromagnetic layer
rare earth
layer
ferromagnetic
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KR20160147791A (ko
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사이먼 에드워드 그랜빌
에바-마리아 요한나 안톤
프랭크 나탈리
벤자민 존 럭
해리 조셉 트로달
제임스 프란시스 맥널티
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사이먼 에드워드 그랜빌
에바-마리아 요한나 안톤
프랭크 나탈리
벤자민 존 럭
해리 조셉 트로달
제임스 프란시스 맥널티
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01L43/08—
    • H01L43/10—
    • H01L43/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
KR1020167030672A 2014-04-02 2015-03-31 희토류 나이트라이드를 포함하는 자성체 및 장치 Expired - Fee Related KR102296108B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NZ62334314 2014-04-02
NZ623343 2014-04-02
PCT/NZ2015/050038 WO2015152736A2 (en) 2014-04-02 2015-03-31 Magnetic materials and devices comprising rare earth nitrides

Publications (2)

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KR20160147791A KR20160147791A (ko) 2016-12-23
KR102296108B1 true KR102296108B1 (ko) 2021-09-02

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US (1) US10373752B2 (enExample)
EP (1) EP3127125B1 (enExample)
JP (1) JP6684224B2 (enExample)
KR (1) KR102296108B1 (enExample)
CN (1) CN106537624B (enExample)
NZ (1) NZ725497A (enExample)
WO (1) WO2015152736A2 (enExample)

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US10229839B2 (en) * 2016-04-29 2019-03-12 The United States Of America, As Represented By The Secretary Of The Navy Transition metal-bearing capping film for group III-nitride devices
TWI753915B (zh) 2016-06-02 2022-02-01 英商Ｉｑｅ有限公司 用於GaN基底應用的磷屬化物緩衝結構和裝置
JP7131835B2 (ja) * 2016-12-07 2022-09-06 ビクトリア リンク リミテッド 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法
WO2018204785A1 (en) * 2017-05-04 2018-11-08 Massachusetts Institute Of Technology Multi-bit-per-cell memory device based on the unidirectional spin hall magnetoresistance
AU2018297668B2 (en) * 2017-07-03 2023-11-16 Victoria Link Limited Ammonia production method and apparatus for ammonia production
US11121139B2 (en) * 2017-11-16 2021-09-14 International Business Machines Corporation Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes
US11183227B1 (en) * 2020-04-29 2021-11-23 Regents Of The University Of Minnesota Electric field switchable magnetic devices
US12581867B2 (en) * 2022-10-26 2026-03-17 Victoria Link Limited Trading As Wellington Univentures Switchable magnetic device or dot for data storage

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Also Published As

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CN106537624A (zh) 2017-03-22
WO2015152736A2 (en) 2015-10-08
NZ725497A (en) 2020-05-29
EP3127125A4 (en) 2018-01-10
US20170018346A1 (en) 2017-01-19
WO2015152736A3 (en) 2016-01-14
KR20160147791A (ko) 2016-12-23
JP2017513231A (ja) 2017-05-25
JP6684224B2 (ja) 2020-04-22
US10373752B2 (en) 2019-08-06
EP3127125B1 (en) 2022-03-30
EP3127125A2 (en) 2017-02-08
CN106537624B (zh) 2020-09-25

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