JP2016166118A5 - - Google Patents

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JP2016166118A5
JP2016166118A5 JP2015060823A JP2015060823A JP2016166118A5 JP 2016166118 A5 JP2016166118 A5 JP 2016166118A5 JP 2015060823 A JP2015060823 A JP 2015060823A JP 2015060823 A JP2015060823 A JP 2015060823A JP 2016166118 A5 JP2016166118 A5 JP 2016166118A5
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single crystal
substrate
garnet
sggg
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JP2016166118A (ja
JP6547360B2 (ja
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JP2015060823A 2015-03-06 2015-03-24 ＣａＭｇＺｒ置換型ガドリニウム・ガリウム・ガーネット（ＳＧＧＧ）単結晶の育成方法およびＳＧＧＧ単結晶基板の製造方法 Active JP6547360B2 (ja)

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JP2015044698 2015-03-06
JP2015044698 2015-03-06

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JP2016166118A JP2016166118A (ja) 2016-09-15
JP2016166118A5 true JP2016166118A5 (enExample) 2018-02-15
JP6547360B2 JP6547360B2 (ja) 2019-07-24

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JP6500807B2 (ja) * 2016-02-25 2019-04-17 住友金属鉱山株式会社 ＣａＭｇＺｒ置換型ガドリニウム・ガリウム・ガーネット（ＳＧＧＧ）単結晶の育成方法
JP6922521B2 (ja) * 2017-07-27 2021-08-18 住友金属鉱山株式会社 非磁性ガーネット単結晶の育成方法
JP7017072B2 (ja) * 2017-12-06 2022-02-08 住友金属鉱山株式会社 非磁性ガーネット単結晶の育成方法
JP2019182682A (ja) * 2018-04-04 2019-10-24 住友金属鉱山株式会社 非磁性ガーネット単結晶の製造方法
JP6933424B1 (ja) * 2020-04-22 2021-09-08 株式会社Ｓｍｍプレシジョン Ｓｇｇｇ単結晶の育成方法とｓｇｇｇ単結晶

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JPH0748425B2 (ja) * 1988-09-30 1995-05-24 信越化学工業株式会社 マイクロ波素子

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