NO20082139L - Magnetronsprutende apparat - Google Patents

Magnetronsprutende apparat

Info

Publication number
NO20082139L
NO20082139L NO20082139A NO20082139A NO20082139L NO 20082139 L NO20082139 L NO 20082139L NO 20082139 A NO20082139 A NO 20082139A NO 20082139 A NO20082139 A NO 20082139A NO 20082139 L NO20082139 L NO 20082139L
Authority
NO
Norway
Prior art keywords
target
erosion
column
rotating shaft
increasing
Prior art date
Application number
NO20082139A
Other languages
English (en)
Norwegian (no)
Inventor
Tadahiro Ohmi
Tetsuya Goto
Takaaki Matsuoka
Original Assignee
Univ Tohoku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Tohoku filed Critical Univ Tohoku
Publication of NO20082139L publication Critical patent/NO20082139L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
NO20082139A 2005-10-07 2008-05-07 Magnetronsprutende apparat NO20082139L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005295181 2005-10-07
PCT/JP2006/320113 WO2007043476A1 (fr) 2005-10-07 2006-10-06 Dispositif de pulvérisation cathodique de magnétron

Publications (1)

Publication Number Publication Date
NO20082139L true NO20082139L (no) 2008-07-04

Family

ID=37942719

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20082139A NO20082139L (no) 2005-10-07 2008-05-07 Magnetronsprutende apparat

Country Status (10)

Country Link
US (1) US20100126848A1 (fr)
EP (1) EP1953257B1 (fr)
JP (1) JP5147000B2 (fr)
KR (1) KR101217381B1 (fr)
CN (1) CN101283114B (fr)
AU (1) AU2006300441A1 (fr)
NO (1) NO20082139L (fr)
RU (1) RU2385967C2 (fr)
TW (1) TWI434947B (fr)
WO (1) WO2007043476A1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5064810B2 (ja) * 2006-01-27 2012-10-31 キヤノン株式会社 蒸着装置および蒸着方法
KR101140195B1 (ko) 2007-03-16 2012-05-02 도쿄엘렉트론가부시키가이샤 마그네트론 스퍼터 장치
KR101166396B1 (ko) * 2007-03-30 2012-07-23 도쿄엘렉트론가부시키가이샤 회전 마그넷 스퍼터 장치
WO2008126811A1 (fr) * 2007-04-06 2008-10-23 National University Corporation Tohoku University Dispositif de pulvérisation magnétron
JP2009146886A (ja) * 2007-11-22 2009-07-02 Tohoku Univ 有機ｅｌ素子、有機ｅｌ表示装置、及びその製造方法
CN101970713B (zh) * 2008-03-04 2012-08-29 国立大学法人东北大学 旋转磁铁溅射装置
WO2009142224A1 (fr) * 2008-05-23 2009-11-26 キヤノンアネルバ株式会社 Dispositif de pulvérisation cathodique à magnétron, procédé de fabrication de film mince, et procédé de fabrication de dispositif d’affichage
JP5390796B2 (ja) * 2008-06-19 2014-01-15 国立大学法人東北大学 マグネトロンスパッタ方法及びマグネトロンスパッタ装置
JP5411481B2 (ja) * 2008-10-22 2014-02-12 国立大学法人東北大学 マグネトロンスパッタ装置
DE112010002010T5 (de) 2009-05-15 2012-06-28 Tokyo Electron Ltd. Drehmagnet-Sputter-Einrichtung
CZ304905B6 (cs) 2009-11-23 2015-01-14 Shm, S.R.O. Způsob vytváření PVD vrstev s pomocí rotační cylindrické katody a zařízení k provádění tohoto způsobu
CN102122599A (zh) * 2010-01-08 2011-07-13 郭信生 衬底处理系统,和衬底处理方法
JP5873276B2 (ja) 2010-12-27 2016-03-01 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
WO2012090475A1 (fr) * 2010-12-28 2012-07-05 キヤノンアネルバ株式会社 Dispositif de pulvérisation cathodique
CN103987873B (zh) * 2011-12-12 2016-10-05 佳能安内华股份有限公司 溅镀装置、靶材及护罩
CN104114742A (zh) * 2012-10-26 2014-10-22 国立大学法人东北大学 磁控溅射装置以及磁控溅射方法
JP2016518240A (ja) 2013-02-15 2016-06-23 リージェンツ オブ ザ ユニバーシティ オブ ミネソタ 粒子の官能化
US9812303B2 (en) 2013-03-01 2017-11-07 Applied Materials, Inc. Configurable variable position closed track magnetron
GB201316366D0 (en) * 2013-09-13 2013-10-30 Teer Coatings Ltd Improvements to coating apparatus
CN103924200B (zh) * 2013-12-30 2017-07-04 上海天马有机发光显示技术有限公司 一种薄膜沉积装置
RU2595187C1 (ru) * 2015-06-10 2016-08-20 федеральное государственное бюджетное образовательное учреждение высшего образования "Национальный исследовательский университет "МЭИ" (ФГБОУ ВО "НИУ "МЭИ") Установка для нанесения покрытий на поверхности деталей
KR20220108049A (ko) * 2019-12-03 2022-08-02 닛토덴코 가부시키가이샤 마그네트론 스퍼터링 성막 장치
JP7530730B2 (ja) * 2020-03-30 2024-08-08 日東電工株式会社 マグネトロンプラズマ成膜装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4309266A (en) * 1980-07-18 1982-01-05 Murata Manufacturing Co., Ltd. Magnetron sputtering apparatus
US4415427A (en) * 1982-09-30 1983-11-15 Gte Products Corporation Thin film deposition by sputtering
JPS59116375A (ja) * 1982-11-26 1984-07-05 Kawasaki Heavy Ind Ltd スパッタリング装置
JPS59197570A (ja) * 1983-04-25 1984-11-09 Kawasaki Heavy Ind Ltd スパツタリング装置の電極部構造
JPH06101194B2 (ja) * 1986-10-31 1994-12-12 日本精工株式会社 導電摺動装置
JPS63307270A (ja) * 1987-06-08 1988-12-14 Matsushita Electric Ind Co Ltd スパッタリング装置
JPH0280564A (ja) * 1988-09-19 1990-03-20 Hitachi Ltd スパッタリング装置
DE4102102C2 (de) * 1991-01-25 1995-09-07 Leybold Ag Magnetanordnung mit wenigstens zwei Permanentmagneten sowie ihre Verwendung
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device
US5630916A (en) * 1993-03-02 1997-05-20 Cvc Products, Inc. Magnetic orienting device for thin film deposition and method of use
JPH07180056A (ja) * 1993-12-24 1995-07-18 Kobe Steel Ltd 蒸着メッキ材の製造方法
DE4415232A1 (de) * 1994-04-30 1995-11-02 Leybold Ag Beschichtungsanlage
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
JPH1026698A (ja) * 1996-07-12 1998-01-27 Nikon Corp 真空薄膜形成装置及び反射鏡の製造方法
KR100315076B1 (ko) * 1996-12-13 2002-02-28 존슨매테이일렉트로닉스, 인코퍼레이티드 석출경화된후면판을갖는확산결합된스퍼터링타겟조립체및그의제조방법
JPH10287977A (ja) * 1997-04-14 1998-10-27 Ricoh Co Ltd スパッタ装置
SE511139C2 (sv) * 1997-11-20 1999-08-09 Hana Barankova Plasmabearbetningsapparat med vridbara magneter
JP2000219965A (ja) * 1999-02-02 2000-08-08 Shin Etsu Chem Co Ltd スパッタ装置用磁気回路
JP2001032067A (ja) * 1999-07-22 2001-02-06 Sanyo Shinku Kogyo Kk 成膜用磁石とそれを用いた成膜方法及びその装置
JP2001164362A (ja) * 1999-12-06 2001-06-19 Ulvac Japan Ltd プレーナーマグネトロンスパッタリング装置
US6251242B1 (en) * 2000-01-21 2001-06-26 Applied Materials, Inc. Magnetron and target producing an extended plasma region in a sputter reactor
US6620296B2 (en) * 2000-07-17 2003-09-16 Applied Materials, Inc. Target sidewall design to reduce particle generation during magnetron sputtering
GB2393321B (en) * 2002-04-06 2005-06-29 Gencoa Ltd Plasma generation

Also Published As

Publication number Publication date
KR20080046285A (ko) 2008-05-26
RU2385967C2 (ru) 2010-04-10
CN101283114B (zh) 2012-04-18
WO2007043476A1 (fr) 2007-04-19
JPWO2007043476A1 (ja) 2009-04-16
KR101217381B1 (ko) 2012-12-31
JP5147000B2 (ja) 2013-02-20
RU2008118147A (ru) 2009-11-20
AU2006300441A1 (en) 2007-04-19
CN101283114A (zh) 2008-10-08
AU2006300441A2 (en) 2008-05-29
TW200730654A (en) 2007-08-16
TWI434947B (zh) 2014-04-21
US20100126848A1 (en) 2010-05-27
EP1953257B1 (fr) 2011-08-17
EP1953257A1 (fr) 2008-08-06
EP1953257A4 (fr) 2010-04-21

Similar Documents

Publication Publication Date Title
NO20082139L (no) Magnetronsprutende apparat
DE602005012850D1 (de) Flacher endblock als träger eines drehbaren sputter-targets
ATE527191T1 (de) Vorformlingzuführvorrichtung mit hohem durchsatz
TW200722642A (en) Hinge apparatus and methods therefor
DE502006008952D1 (de) Magnetron-Sputterquelle, Sputter-Beschichtungsanlage und Verfahren zur Beschichtung eines Substrats
TW200506083A (en) Sputter source, sputtering device, and sputtering method
MX2021000198A (es) Aparato y método para el tratamiento de un sustrato con partículas sólidas.
NO20085230L (no) Superledende tynnfilmmateriale og fremgangsmate for fremstilling av superledende tynnfilmmateriale
WO2009028055A1 (fr) Procédé et dispositif de dépôt de film par pulvérisation
CN101031989A (zh) 用于制造磁控管涂覆的衬底的方法以及磁控管溅射源
WO2008126811A1 (fr) Dispositif de pulvérisation magnétron
TW200710251A (en) Sputtering apparatus and sputtering method
PL1856303T3 (pl) Pojedynczy, prostokątny blok czołowy
DE50108225D1 (de) Verfahren und Einrichtung zum Auswuchten von rotierenden Körpern
JP5713872B2 (ja) 成膜装置及び成膜方法
DE60314107D1 (de) Verfahren und vorrichtung zum abschälen eines dünnen films von einer trägerbahn
TW202113113A (zh) 偏置磁場控制方法、磁性薄膜沉積方法、腔室及設備
ATE437251T1 (de) Verfahren und vorrichtung zum beschichten von substraten
KR970072164A (ko) 유성 마그넷 소스 어셈블리를 가진 플라즈마 처리 챔버
JP4646066B2 (ja) 真空処理装置
JP2006037127A (ja) スパッタ電極構造
US20130017316A1 (en) Sputter gun
JPS63100180A (ja) マグネトロンスパツタリング装置
CN105164305B (zh) 电弧蒸发源
DE50111826D1 (de) Verfahren zum eintragen von körnigem erz in einen röstofen

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application