NO20081913L - Fremgangsmate for fremstilling av monosilan - Google Patents
Fremgangsmate for fremstilling av monosilanInfo
- Publication number
- NO20081913L NO20081913L NO20081913A NO20081913A NO20081913L NO 20081913 L NO20081913 L NO 20081913L NO 20081913 A NO20081913 A NO 20081913A NO 20081913 A NO20081913 A NO 20081913A NO 20081913 L NO20081913 L NO 20081913L
- Authority
- NO
- Norway
- Prior art keywords
- countercurrent reactor
- trichlorosilane
- heat exchanger
- double wall
- monosilane
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
- B01D3/009—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping in combination with chemical reactions
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- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/30—Loose or shaped packing elements, e.g. Raschig rings or Berl saddles, for pouring into the apparatus for mass or heat transfer
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- B01J19/32—Packing elements in the form of grids or built-up elements for forming a unit or module inside the apparatus for mass or heat transfer
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- B01J8/008—Details of the reactor or of the particulate material; Processes to increase or to retard the rate of reaction
- B01J8/0085—Details of the reactor or of the particulate material; Processes to increase or to retard the rate of reaction promoting uninterrupted fluid flow, e.g. by filtering out particles in front of the catalyst layer
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- B01J8/008—Details of the reactor or of the particulate material; Processes to increase or to retard the rate of reaction
- B01J8/009—Membranes, e.g. feeding or removing reactants or products to or from the catalyst bed through a membrane
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Den foreliggende oppfinnelsen angår et anlegg og en fremgangsmåte for kontinuerlig produksjon av monosilan og tetraklorsilan ved katalytisk dismutasjon av triklorsilan ved en driftstemperatur og et trykk fra 1-50 bar absolutt, i et anlegg ifølge krav 1, hvori triklorsilan (A) forvarmes i en varmeveksler (7) og føres til motstrømsreaktoren (1) som er utstyrt med en katalysator (3), - produktblanding som dannes i motstrømsreaktoren (1) blir i det minste delvis kondensert ved hjelp av kondenseren (5) ved en temperatur i området fra -25 til 50 °C, hvor kondensatet strømmer tilbake til motstrømsreaktoren (1), - produktfasen som ikke er blitt kondensert i kondenseren (5) føres til kondenseringsenheten (8) som drives ved en temperatur i området fra -40 til -110 °C, - den flyktige produktfasen fra kondenseringsenheten (8) føres til destillasjonskolonnen (9) som drives ved en temperatur i området fra -60 til -170 °C og monosilan (C) tas ut på toppen av destillasjonskolonnen (9), - SiCl4-holdig bunnfraksjon fra motstrømsreaktoren (1) bringes til en temperatur i området fra 60-110 °C i fordampningsenheten (6), og bunnproduktet fra fordampningsenheten (6) føres via en varmeveksler (7) inn i dobbeltveggen (2) av motstrømsreaktoren (1), og SiCl4-holdig produktstrøm (B) tas ut på et nivå i det øvre området av reaktoren.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005046105A DE102005046105B3 (de) | 2005-09-27 | 2005-09-27 | Verfahren zur Herstellung von Monosilan |
PCT/EP2006/063316 WO2007039326A1 (en) | 2005-09-27 | 2006-06-19 | Process for producing monosilane |
Publications (1)
Publication Number | Publication Date |
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NO20081913L true NO20081913L (no) | 2008-04-22 |
Family
ID=36950933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20081913A NO20081913L (no) | 2005-09-27 | 2008-04-22 | Fremgangsmate for fremstilling av monosilan |
Country Status (14)
Country | Link |
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US (1) | US8105564B2 (no) |
EP (1) | EP1928591B1 (no) |
JP (1) | JP4922303B2 (no) |
KR (1) | KR20080065971A (no) |
CN (1) | CN101466463B (no) |
AT (1) | ATE413918T1 (no) |
BR (1) | BRPI0616443A2 (no) |
CA (1) | CA2624534C (no) |
DE (2) | DE102005046105B3 (no) |
ES (1) | ES2317557T3 (no) |
NO (1) | NO20081913L (no) |
RU (1) | RU2403964C2 (no) |
UA (1) | UA89438C2 (no) |
WO (1) | WO2007039326A1 (no) |
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DE102006003464A1 (de) * | 2006-01-25 | 2007-07-26 | Degussa Gmbh | Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung |
DE102007007874A1 (de) | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
DE102007052325A1 (de) * | 2007-03-29 | 2009-05-07 | Erk Eckrohrkessel Gmbh | Verfahren zum gleitenden Temperieren chemischer Substanzen mit definierten Ein- und Ausgangstemperaturen in einem Erhitzer und Einrichtung zur Durchführung des Verfahrens |
DE102007050199A1 (de) * | 2007-10-20 | 2009-04-23 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus anorganischen Silanen |
DE102008017304A1 (de) * | 2008-03-31 | 2009-10-01 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Herstellung von Reinstsilizium |
CN102092720B (zh) * | 2009-02-13 | 2013-03-27 | 李明成 | 高纯硅烷气体连续制备装置 |
ES2350559B1 (es) * | 2009-05-28 | 2011-11-18 | Centro De Tecnologia Del Silicio Solar, S.L. (Centesil) | Procedimiento de aprovechamiento de residuos ligeros en una planta de producción de silicio de alta pureza. |
DE102009027730A1 (de) | 2009-07-15 | 2011-01-27 | Evonik Degussa Gmbh | Verahren und Verwendung von aminofunktionellen Harzen zur Dismutierung von Halogensilanen und zur Entfernung von Fremdmetallen |
DE102009037154B3 (de) * | 2009-08-04 | 2010-12-09 | Schmid Silicon Technology Gmbh | Verfahren zur Herstellung von Monosilan |
KR101159674B1 (ko) * | 2009-11-16 | 2012-06-25 | 주식회사 케이씨씨 | 모노실란의 정제방법 |
DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
DE102010034469A1 (de) * | 2010-08-06 | 2012-02-09 | Schmid Silicon Technology Gmbh | Anlage zur Herstellung von Monosilan |
CN101920178B (zh) * | 2010-08-30 | 2012-04-25 | 哈尔滨工业大学 | 制备甲硅烷气体的管式反应器系统及使用其制备甲硅烷的方法 |
EP2426089A1 (en) * | 2010-09-03 | 2012-03-07 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Process for separating monosilane from chlorosilanes-rich mixture |
DE102010043648A1 (de) | 2010-11-09 | 2012-05-10 | Evonik Degussa Gmbh | Verfahren zur selektiven Spaltung höherer Silane |
DE102011004058A1 (de) * | 2011-02-14 | 2012-08-16 | Evonik Degussa Gmbh | Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung |
CN103648980B (zh) * | 2011-06-28 | 2017-10-13 | Memc电子材料有限公司 | 在泡罩塔中制备硅烷的方法 |
CN103112860B (zh) * | 2013-02-26 | 2015-09-02 | 天津大学 | 改良西门子法联产制备高纯硅烷的方法 |
CN106397471B (zh) * | 2016-08-16 | 2018-09-28 | 湖北兴发化工集团股份有限公司 | 一种有机硅单体原料氯甲烷的汽化节能装置及工艺 |
CN106241813B (zh) * | 2016-08-16 | 2021-01-01 | 上海交通大学 | 一种由三氯氢硅生产高纯硅烷的系统及方法 |
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2005
- 2005-09-27 DE DE102005046105A patent/DE102005046105B3/de not_active Expired - Fee Related
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- 2006-06-19 JP JP2008532688A patent/JP4922303B2/ja not_active Expired - Fee Related
- 2006-06-19 CA CA2624534A patent/CA2624534C/en not_active Expired - Fee Related
- 2006-06-19 UA UAA200805472A patent/UA89438C2/ru unknown
- 2006-06-19 KR KR1020087007312A patent/KR20080065971A/ko active IP Right Grant
- 2006-06-19 US US12/088,286 patent/US8105564B2/en not_active Expired - Fee Related
- 2006-06-19 WO PCT/EP2006/063316 patent/WO2007039326A1/en active Application Filing
- 2006-06-19 EP EP06763774A patent/EP1928591B1/en not_active Not-in-force
- 2006-06-19 CN CN2006800356931A patent/CN101466463B/zh not_active Expired - Fee Related
- 2006-06-19 DE DE602006003667T patent/DE602006003667D1/de active Active
- 2006-06-19 ES ES06763774T patent/ES2317557T3/es active Active
- 2006-06-19 BR BRPI0616443-9A patent/BRPI0616443A2/pt not_active IP Right Cessation
- 2006-06-19 RU RU2008116147/12A patent/RU2403964C2/ru not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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JP2009509901A (ja) | 2009-03-12 |
CN101466463B (zh) | 2012-07-18 |
KR20080065971A (ko) | 2008-07-15 |
ES2317557T3 (es) | 2009-04-16 |
US20090155156A1 (en) | 2009-06-18 |
US8105564B2 (en) | 2012-01-31 |
EP1928591A1 (en) | 2008-06-11 |
BRPI0616443A2 (pt) | 2011-06-21 |
JP4922303B2 (ja) | 2012-04-25 |
RU2403964C2 (ru) | 2010-11-20 |
WO2007039326A1 (en) | 2007-04-12 |
DE102005046105B3 (de) | 2007-04-26 |
DE602006003667D1 (de) | 2008-12-24 |
CA2624534A1 (en) | 2007-04-12 |
CN101466463A (zh) | 2009-06-24 |
UA89438C2 (ru) | 2010-01-25 |
ATE413918T1 (de) | 2008-11-15 |
RU2008116147A (ru) | 2009-11-10 |
EP1928591B1 (en) | 2008-11-12 |
CA2624534C (en) | 2012-11-27 |
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