NO20075026L - Fremgangsmate for fremstilling av silisium med hoy renhet - Google Patents

Fremgangsmate for fremstilling av silisium med hoy renhet

Info

Publication number
NO20075026L
NO20075026L NO20075026A NO20075026A NO20075026L NO 20075026 L NO20075026 L NO 20075026L NO 20075026 A NO20075026 A NO 20075026A NO 20075026 A NO20075026 A NO 20075026A NO 20075026 L NO20075026 L NO 20075026L
Authority
NO
Norway
Prior art keywords
high purity
silicon
producing high
purity silicon
oxidizing agent
Prior art date
Application number
NO20075026A
Other languages
English (en)
Inventor
Kensuke Okazawa
Masaki Okajima
Nobuaki Ito
Jiro Kondo
Original Assignee
Nippon Steel Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Materials Co Ltd filed Critical Nippon Steel Materials Co Ltd
Publication of NO20075026L publication Critical patent/NO20075026L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)

Abstract

Det beskrives en fremgangsmåte for fremstilling av en stor mengde rimelig silisium med høy renhet som kan benyttes i solarbatterier og solceller. Det beskrives en metode fior fiemstilling av høyren silisium ved å ^eme bor fia silisium ved oksidasjon inkludert å begynne en oksidasjonsreaksjon mellom et oksidasjonsmiddel og smeltet silisium, og avkjøle minst en del av det oksiderende middel under reaksjonen.
NO20075026A 2005-03-07 2007-10-04 Fremgangsmate for fremstilling av silisium med hoy renhet NO20075026L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005062557A JP4741860B2 (ja) 2005-03-07 2005-03-07 高純度のシリコンの製造方法
PCT/JP2006/304194 WO2006095663A2 (en) 2005-03-07 2006-02-28 Method for producing high purity silicon

Publications (1)

Publication Number Publication Date
NO20075026L true NO20075026L (no) 2007-10-04

Family

ID=36500910

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20075026A NO20075026L (no) 2005-03-07 2007-10-04 Fremgangsmate for fremstilling av silisium med hoy renhet

Country Status (8)

Country Link
US (1) US20080274031A1 (no)
EP (1) EP1910225A2 (no)
JP (1) JP4741860B2 (no)
KR (1) KR20080003797A (no)
CN (1) CN101137578A (no)
BR (1) BRPI0609259A2 (no)
NO (1) NO20075026L (no)
WO (1) WO2006095663A2 (no)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5277654B2 (ja) * 2008-02-15 2013-08-28 住友化学株式会社 ホウ素添加シリコンの製造方法
JP5131860B2 (ja) * 2009-06-01 2013-01-30 シャープ株式会社 シリコンシートおよび太陽電池
WO2011009017A2 (en) * 2009-07-17 2011-01-20 Boston Silicon Materials Llc Process for the formation of silicon metal sheets
CN101792143B (zh) * 2010-03-24 2011-12-21 姜学昭 提纯硅的方法
CN101941700B (zh) * 2010-09-15 2014-04-30 北京应天阳光太阳能技术有限公司 一种从工业硅中去除硼杂质的方法
CN102153090B (zh) * 2011-05-19 2012-12-12 厦门大学 一种冶金法n型多晶硅片硼吸杂方法
DE102012109248A1 (de) * 2012-09-28 2014-04-03 Fluxana GmbH & Co. KG Herstellung von Analyseproben
US10455680B2 (en) * 2016-02-29 2019-10-22 Asml Netherlands B.V. Method and apparatus for purifying target material for EUV light source

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1100218B (it) * 1978-11-09 1985-09-28 Montedison Spa Procedimento per la purificazione di silicio
DE2933164A1 (de) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind Verfahren zum reinigen von rohsilicium
JP2538044B2 (ja) * 1989-04-07 1996-09-25 川崎製鉄株式会社 金属シリコン脱炭用ランスおよび脱炭方法
JP3205352B2 (ja) * 1990-05-30 2001-09-04 川崎製鉄株式会社 シリコン精製方法及び装置
JP3000109B2 (ja) * 1990-09-20 2000-01-17 株式会社住友シチックス尼崎 高純度シリコン鋳塊の製造方法
JPH09202611A (ja) * 1996-01-25 1997-08-05 Kawasaki Steel Corp 金属シリコン中のボロン除去方法
US5820842A (en) * 1996-09-10 1998-10-13 Elkem Metals Company L.P. Silicon refining process
JPH10324515A (ja) * 1997-03-24 1998-12-08 Kawasaki Steel Corp 太陽電池用シリコンの製造方法
JPH1149510A (ja) * 1997-07-31 1999-02-23 Daido Steel Co Ltd 金属Ｓｉの精製方法及びその装置
US5972107A (en) * 1997-08-28 1999-10-26 Crystal Systems, Inc. Method for purifying silicon
US6368403B1 (en) * 1997-08-28 2002-04-09 Crystal Systems, Inc. Method and apparatus for purifying silicon
JP2000302432A (ja) * 1999-04-19 2000-10-31 Shin Etsu Chem Co Ltd 高純度金属シリコンの精製方法
JP4365480B2 (ja) * 1999-06-07 2009-11-18 昭和電工株式会社 高純度シリコンの製造方法
JP4264166B2 (ja) * 1999-08-20 2009-05-13 昭和電工株式会社 ケイ素の精製方法
JP2003012317A (ja) * 2001-06-27 2003-01-15 Daido Steel Co Ltd シリコンの精製方法
AU2003208106A1 (en) * 2002-02-04 2003-09-02 Sharp Kabushiki Kaisha Silicon purifying method, slag for purifying silicon, and purified silicon
JP2003238138A (ja) * 2002-02-20 2003-08-27 Sharp Corp シリコンの精製方法およびシリコンの精製装置
JP2003277040A (ja) * 2002-03-19 2003-10-02 Sharp Corp シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池
JP4766837B2 (ja) * 2004-03-03 2011-09-07 新日鉄マテリアルズ株式会社 シリコンからのホウ素除去方法
JP4966560B2 (ja) * 2005-03-07 2012-07-04 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
JP4880236B2 (ja) * 2005-03-07 2012-02-22 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
JP4856973B2 (ja) * 2005-03-07 2012-01-18 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法

Also Published As

Publication number Publication date
WO2006095663A3 (en) 2007-02-08
JP4741860B2 (ja) 2011-08-10
BRPI0609259A2 (pt) 2010-03-09
KR20080003797A (ko) 2008-01-08
EP1910225A2 (en) 2008-04-16
US20080274031A1 (en) 2008-11-06
JP2006240963A (ja) 2006-09-14
CN101137578A (zh) 2008-03-05
WO2006095663A2 (en) 2006-09-14

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