NO20065968L - Stivnet silisiummasse fra smeltet tilstand og fremgangsmate for a fremstille samme - Google Patents

Stivnet silisiummasse fra smeltet tilstand og fremgangsmate for a fremstille samme

Info

Publication number
NO20065968L
NO20065968L NO20065968A NO20065968A NO20065968L NO 20065968 L NO20065968 L NO 20065968L NO 20065968 A NO20065968 A NO 20065968A NO 20065968 A NO20065968 A NO 20065968A NO 20065968 L NO20065968 L NO 20065968L
Authority
NO
Norway
Prior art keywords
silicon
stiffened
vessel
molten
receive
Prior art date
Application number
NO20065968A
Other languages
English (en)
Other versions
NO338623B1 (no
Inventor
N N
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of NO20065968L publication Critical patent/NO20065968L/no
Publication of NO338623B1 publication Critical patent/NO338623B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12479—Porous [e.g., foamed, spongy, cracked, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

En stivnet masse for et multikrystallsilisiummateriale av høy renhet som fortrinnsvis anvendes for fremstilling av krystalltypesilisiumingoter for fotogalvaniske elementer, og en fremgangsmåte for fremstilling av den stivnede massen er tilveiebrakt. Silisiummassen stivnet fra smeltet tilstand ifølge oppfinnelsen er en stivnet masse fremstilt ved å dryppe smeltet silisium i et mottakskar og tillate karet å motta det smeltede silisiumet, den stivnede massen inneholder bobler og har (i) en tilsynelatende tetthet på ikke mindre enn 1,5 g/cm3 og ikke mer enn 2,2 g/cm3 og (ii) en trykkfasthet på ikke mindre enn 5 MPa og ikke mer enn 50 MPa. Fremgangsmåten for fremstilling av en silisiummasse stivnet fra smeltet tilstand ifølge oppfinnelsen er en fremgangsmåte omfattende å dryppe smeltet silisium i et mottakskar og tillate karet å motta det smeltede silisiumet, hvori karets overflatetemperatur for å motta det smeltede silisiumet ikke er lavere enn 0 (C og ikke høyere enn 1 000 (C, og mottakskaret tillates å motta det smeltede silisiumet i en hastighet på 1 x 10-3 til 5 x 10-1 g/s·cm2.
NO20065968A 2004-05-21 2006-12-20 Stivnet silisiummasse fra smeltet tilstand og fremgangsmåte for å fremstille samme NO338623B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004152189 2004-05-21
PCT/JP2005/009358 WO2005113436A1 (ja) 2004-05-21 2005-05-23 溶融シリコンの冷却塊状物およびその製造方法

Publications (2)

Publication Number Publication Date
NO20065968L true NO20065968L (no) 2007-02-21
NO338623B1 NO338623B1 (no) 2016-09-19

Family

ID=35428349

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20065968A NO338623B1 (no) 2004-05-21 2006-12-20 Stivnet silisiummasse fra smeltet tilstand og fremgangsmåte for å fremstille samme

Country Status (8)

Country Link
US (1) US7871590B2 (no)
EP (1) EP1783098B1 (no)
JP (1) JP4804348B2 (no)
CN (1) CN1956921B (no)
AU (1) AU2005245291B2 (no)
CA (1) CA2567500C (no)
NO (1) NO338623B1 (no)
WO (1) WO2005113436A1 (no)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112009000068T5 (de) * 2008-06-24 2011-04-21 JIANGXI SAI WEI LDK SOLAR HI-TECH Co., Ltd., Xinyu Verfahren zur Verwendung von Siliziumpulver und Silizium-Blöcken als Rohmaterial mit guter Füllleistung in Einkristall- oder Polykristall-Öfen
JP5489614B2 (ja) * 2008-12-19 2014-05-14 株式会社トクヤマ 光学部材の製造方法
CN102272048A (zh) * 2009-01-07 2011-12-07 瑞科硅公司 在被分开的固体材料的移动床上的熔融材料的固化
JP2014088275A (ja) * 2012-10-29 2014-05-15 Tokuyama Corp 多結晶シリコンの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0696443B2 (ja) * 1992-07-17 1994-11-30 大同ほくさん株式会社 シリコン等多結晶質物体の鋳造方法
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
JPH11180710A (ja) 1997-12-18 1999-07-06 Daido Hoxan Inc シリコンインゴット製造装置
JPH11310496A (ja) * 1998-02-25 1999-11-09 Mitsubishi Materials Corp 一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置
JPH11314996A (ja) 1998-05-08 1999-11-16 Digital Wave:Kk 結晶の製造方法及び製造装置
CN1224574C (zh) * 2000-05-11 2005-10-26 德山株式会社 多晶硅、其生产方法及生产装置
JP4231951B2 (ja) * 2001-04-16 2009-03-04 株式会社トクヤマ 多結晶シリコン発泡体およびその製造方法
CN1230379C (zh) 2001-06-06 2005-12-07 株式会社德山 硅的制造方法
JP2003104711A (ja) * 2001-09-28 2003-04-09 Mitsubishi Materials Polycrystalline Silicon Corp ルツボ型多結晶シリコン

Also Published As

Publication number Publication date
EP1783098A4 (en) 2009-11-04
AU2005245291B2 (en) 2009-03-26
US20080038177A1 (en) 2008-02-14
EP1783098A1 (en) 2007-05-09
CN1956921A (zh) 2007-05-02
NO338623B1 (no) 2016-09-19
CN1956921B (zh) 2012-02-29
AU2005245291A1 (en) 2005-12-01
CA2567500A1 (en) 2005-12-01
JPWO2005113436A1 (ja) 2008-03-27
JP4804348B2 (ja) 2011-11-02
CA2567500C (en) 2010-07-13
US7871590B2 (en) 2011-01-18
EP1783098B1 (en) 2011-09-07
WO2005113436A1 (ja) 2005-12-01

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