NO20054737L - Halvlederlaser med variabel bolgelengde og gassfoler som benytter denne - Google Patents
Halvlederlaser med variabel bolgelengde og gassfoler som benytter denneInfo
- Publication number
- NO20054737L NO20054737L NO20054737A NO20054737A NO20054737L NO 20054737 L NO20054737 L NO 20054737L NO 20054737 A NO20054737 A NO 20054737A NO 20054737 A NO20054737 A NO 20054737A NO 20054737 L NO20054737 L NO 20054737L
- Authority
- NO
- Norway
- Prior art keywords
- foils
- gas
- semiconductor lasers
- variable wavelength
- wavelength
- Prior art date
Links
- 239000011888 foil Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
- G01J3/433—Modulation spectrometry; Derivative spectrometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Semiconductor Lasers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004037801A JP2005229011A (ja) | 2004-02-16 | 2004-02-16 | 波長可変半導体レーザ及びガス検知装置 |
PCT/JP2005/002053 WO2005078880A1 (ja) | 2004-02-16 | 2005-02-10 | 波長可変半導体レーザ及びそれを用いるガス検知装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
NO20054737D0 NO20054737D0 (no) | 2005-10-14 |
NO20054737L true NO20054737L (no) | 2006-06-07 |
Family
ID=34857785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20054737A NO20054737L (no) | 2004-02-16 | 2005-10-14 | Halvlederlaser med variabel bolgelengde og gassfoler som benytter denne |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060187976A1 (no) |
EP (1) | EP1717918A4 (no) |
JP (1) | JP2005229011A (no) |
CN (1) | CN1765037A (no) |
NO (1) | NO20054737L (no) |
WO (1) | WO2005078880A1 (no) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9116116B2 (en) * | 2008-03-28 | 2015-08-25 | Horiba, Ltd. | Optical analyzer and wavelength stabilized laser device for analyzer |
US7943915B2 (en) * | 2008-10-10 | 2011-05-17 | Ge Infrastructure Sensing, Inc. | Method of calibrating a wavelength-modulation spectroscopy apparatus |
US7957001B2 (en) * | 2008-10-10 | 2011-06-07 | Ge Infrastructure Sensing, Inc. | Wavelength-modulation spectroscopy method and apparatus |
CN103828146B (zh) * | 2011-07-22 | 2017-07-21 | 因赛特光电子解决方案有限公司 | 从激光器动态自适应地生成波长连续的且规定的波长对时间的扫描的系统和方法 |
CN102368591B (zh) * | 2011-10-28 | 2013-04-24 | 武汉华工正源光子技术有限公司 | 一种条形掩埋分布反馈半导体激光器的制作方法 |
JP2013113664A (ja) * | 2011-11-28 | 2013-06-10 | Yokogawa Electric Corp | レーザガス分析装置 |
JP5933972B2 (ja) * | 2011-12-27 | 2016-06-15 | 株式会社堀場製作所 | ガス計測装置およびガス計測装置における波長変調幅の設定方法。 |
US8896835B2 (en) * | 2011-12-27 | 2014-11-25 | Horiba, Ltd. | Gas measurement apparatus and the setting method of width of wavelength modulation in gas measurement apparatus |
JP6467166B2 (ja) * | 2014-08-19 | 2019-02-06 | 浜松ホトニクス株式会社 | 波長掃引型半導体レーザ素子及びガス濃度測定装置 |
EP3001180A1 (de) * | 2014-09-29 | 2016-03-30 | Siemens Aktiengesellschaft | Verfahren und Gasanalysator zur Messung der Konzentration einer Gaskomponente in einem Messgas |
CN104792730B (zh) * | 2015-04-17 | 2018-02-16 | 山东大学 | 一种基于光波导激光结构的血糖浓度探测器及其制备方法与应用 |
CN105406355B (zh) * | 2015-12-22 | 2018-06-29 | 中国科学院半导体研究所 | 共腔双波长分布反馈激光器的制作方法 |
EP3543682B1 (de) * | 2018-03-22 | 2020-04-29 | Axetris AG | Verfahren zum betreiben eines optischen messsystems zur messung der konzentration einer gaskomponente in einem messgas |
CN108776277B (zh) * | 2018-07-04 | 2020-10-09 | 歌尔股份有限公司 | 激光器检测装置以及方法 |
CN109802299A (zh) * | 2019-03-20 | 2019-05-24 | 青岛海信宽带多媒体技术有限公司 | 一种用于硅光子电路的高功率分布反馈布拉格光栅激光器 |
EP3799231B9 (en) * | 2019-09-27 | 2024-04-24 | ams International AG | Optical device, photonic detector, and method of manufacturing an optical device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6252436A (ja) * | 1985-08-30 | 1987-03-07 | Fujitsu Ltd | ガス検知装置 |
US4730112A (en) * | 1986-03-07 | 1988-03-08 | Hibshman Corporation | Oxygen measurement using visible radiation |
US4870468A (en) * | 1986-09-12 | 1989-09-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method of manufacturing the same |
JP2619057B2 (ja) * | 1989-05-22 | 1997-06-11 | 三菱電機株式会社 | 半導体レーザの製造方法 |
US5358898A (en) * | 1989-07-15 | 1994-10-25 | Fujitsu Limited | Method of making a tunable laser diode having a distributed feedback structure |
US5047639A (en) * | 1989-12-22 | 1991-09-10 | Wong Jacob Y | Concentration detector |
US5228050A (en) * | 1992-02-03 | 1993-07-13 | Gte Laboratories Incorporated | Integrated multiple-wavelength laser array |
US5347526A (en) * | 1992-03-31 | 1994-09-13 | Kabushiki Kaisha Toshiba | Wavelength-tunable semiconductor laser |
JP3064661B2 (ja) * | 1992-03-31 | 2000-07-12 | 株式会社東芝 | 波長可変半導体レーザ |
DE69332065T2 (de) * | 1992-04-15 | 2002-12-19 | Sharp K.K., Osaka | Halbleiterlaservorrichtung |
JP3195159B2 (ja) * | 1993-11-25 | 2001-08-06 | 株式会社東芝 | 光半導体素子 |
JP3274605B2 (ja) * | 1996-05-01 | 2002-04-15 | 日本無線株式会社 | 炭素同位体分析装置 |
JPH11326199A (ja) * | 1998-05-07 | 1999-11-26 | Anritsu Corp | ガス検知装置 |
JP3481458B2 (ja) * | 1998-05-14 | 2003-12-22 | アンリツ株式会社 | 半導体レーザ |
JP2000206035A (ja) * | 1999-01-19 | 2000-07-28 | Anritsu Corp | ガス検出装置 |
JP3778260B2 (ja) * | 2000-08-16 | 2006-05-24 | 日本電気株式会社 | 半導体レーザとこれを用いたデジタル光通信システムと方法 |
JP5143985B2 (ja) * | 2001-08-10 | 2013-02-13 | 古河電気工業株式会社 | 分布帰還型半導体レーザ素子 |
JP2003234541A (ja) * | 2001-12-07 | 2003-08-22 | Furukawa Electric Co Ltd:The | 分布帰還型半導体レーザ素子 |
-
2004
- 2004-02-16 JP JP2004037801A patent/JP2005229011A/ja active Pending
-
2005
- 2005-02-10 EP EP05710105A patent/EP1717918A4/en not_active Ceased
- 2005-02-10 WO PCT/JP2005/002053 patent/WO2005078880A1/ja not_active Application Discontinuation
- 2005-02-10 US US10/548,394 patent/US20060187976A1/en not_active Abandoned
- 2005-02-10 CN CN200580000140.8A patent/CN1765037A/zh active Pending
- 2005-10-14 NO NO20054737A patent/NO20054737L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN1765037A (zh) | 2006-04-26 |
WO2005078880A1 (ja) | 2005-08-25 |
NO20054737D0 (no) | 2005-10-14 |
JP2005229011A (ja) | 2005-08-25 |
EP1717918A1 (en) | 2006-11-02 |
US20060187976A1 (en) | 2006-08-24 |
EP1717918A4 (en) | 2007-05-16 |
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Legal Events
Date | Code | Title | Description |
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FC2A | Withdrawal, rejection or dismissal of laid open patent application |