NO20054737L - Halvlederlaser med variabel bolgelengde og gassfoler som benytter denne - Google Patents

Halvlederlaser med variabel bolgelengde og gassfoler som benytter denne

Info

Publication number
NO20054737L
NO20054737L NO20054737A NO20054737A NO20054737L NO 20054737 L NO20054737 L NO 20054737L NO 20054737 A NO20054737 A NO 20054737A NO 20054737 A NO20054737 A NO 20054737A NO 20054737 L NO20054737 L NO 20054737L
Authority
NO
Norway
Prior art keywords
foils
gas
semiconductor lasers
variable wavelength
wavelength
Prior art date
Application number
NO20054737A
Other languages
English (en)
Other versions
NO20054737D0 (no
Inventor
Hiroshi Mori
Tomoyuki Kikugawa
Yoshio Takahashi
Toshiyuki Suzuki
Kiyoshi Kimura
Original Assignee
Anritsu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anritsu Corp filed Critical Anritsu Corp
Publication of NO20054737D0 publication Critical patent/NO20054737D0/no
Publication of NO20054737L publication Critical patent/NO20054737L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G01J3/433—Modulation spectrometry; Derivative spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
NO20054737A 2004-02-16 2005-10-14 Halvlederlaser med variabel bolgelengde og gassfoler som benytter denne NO20054737L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004037801A JP2005229011A (ja) 2004-02-16 2004-02-16 波長可変半導体レーザ及びガス検知装置
PCT/JP2005/002053 WO2005078880A1 (ja) 2004-02-16 2005-02-10 波長可変半導体レーザ及びそれを用いるガス検知装置

Publications (2)

Publication Number Publication Date
NO20054737D0 NO20054737D0 (no) 2005-10-14
NO20054737L true NO20054737L (no) 2006-06-07

Family

ID=34857785

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20054737A NO20054737L (no) 2004-02-16 2005-10-14 Halvlederlaser med variabel bolgelengde og gassfoler som benytter denne

Country Status (6)

Country Link
US (1) US20060187976A1 (no)
EP (1) EP1717918A4 (no)
JP (1) JP2005229011A (no)
CN (1) CN1765037A (no)
NO (1) NO20054737L (no)
WO (1) WO2005078880A1 (no)

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* Cited by examiner, † Cited by third party
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WO2009119790A1 (ja) * 2008-03-28 2009-10-01 株式会社堀場製作所 光分析計及び分析計用波長安定化レーザ装置
US7957001B2 (en) * 2008-10-10 2011-06-07 Ge Infrastructure Sensing, Inc. Wavelength-modulation spectroscopy method and apparatus
US7943915B2 (en) * 2008-10-10 2011-05-17 Ge Infrastructure Sensing, Inc. Method of calibrating a wavelength-modulation spectroscopy apparatus
EP2735064A2 (en) * 2011-07-22 2014-05-28 Insight Photonic Solutions, Inc. System and method of dynamic and adaptive creation of a wavelength-continuous and prescribed wavelength versus time sweep from a laser
CN102368591B (zh) * 2011-10-28 2013-04-24 武汉华工正源光子技术有限公司 一种条形掩埋分布反馈半导体激光器的制作方法
JP2013113664A (ja) * 2011-11-28 2013-06-10 Yokogawa Electric Corp レーザガス分析装置
JP5933972B2 (ja) * 2011-12-27 2016-06-15 株式会社堀場製作所 ガス計測装置およびガス計測装置における波長変調幅の設定方法。
EP2610608B1 (en) * 2011-12-27 2016-07-20 HORIBA, Ltd. Gas measurement apparatus and method for setting the width of wavelength modulation in a gas measurement apparatus
JP6467166B2 (ja) * 2014-08-19 2019-02-06 浜松ホトニクス株式会社 波長掃引型半導体レーザ素子及びガス濃度測定装置
EP3001180A1 (de) * 2014-09-29 2016-03-30 Siemens Aktiengesellschaft Verfahren und Gasanalysator zur Messung der Konzentration einer Gaskomponente in einem Messgas
CN104792730B (zh) * 2015-04-17 2018-02-16 山东大学 一种基于光波导激光结构的血糖浓度探测器及其制备方法与应用
CN105406355B (zh) * 2015-12-22 2018-06-29 中国科学院半导体研究所 共腔双波长分布反馈激光器的制作方法
EP3543682B1 (de) * 2018-03-22 2020-04-29 Axetris AG Verfahren zum betreiben eines optischen messsystems zur messung der konzentration einer gaskomponente in einem messgas
CN108776277B (zh) * 2018-07-04 2020-10-09 歌尔股份有限公司 激光器检测装置以及方法
CN109802299A (zh) * 2019-03-20 2019-05-24 青岛海信宽带多媒体技术有限公司 一种用于硅光子电路的高功率分布反馈布拉格光栅激光器
EP3799231B9 (en) * 2019-09-27 2024-04-24 ams International AG Optical device, photonic detector, and method of manufacturing an optical device
CN118336512B (zh) * 2024-06-12 2024-09-03 天津市极光创新智能科技有限公司 一种tdlas中红外激光控制系统及方法

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JPS6252436A (ja) * 1985-08-30 1987-03-07 Fujitsu Ltd ガス検知装置
US4730112A (en) * 1986-03-07 1988-03-08 Hibshman Corporation Oxygen measurement using visible radiation
US4870468A (en) * 1986-09-12 1989-09-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
US5358898A (en) * 1989-07-15 1994-10-25 Fujitsu Limited Method of making a tunable laser diode having a distributed feedback structure
US5047639A (en) * 1989-12-22 1991-09-10 Wong Jacob Y Concentration detector
US5228050A (en) * 1992-02-03 1993-07-13 Gte Laboratories Incorporated Integrated multiple-wavelength laser array
JP3064661B2 (ja) * 1992-03-31 2000-07-12 株式会社東芝 波長可変半導体レーザ
US5347526A (en) * 1992-03-31 1994-09-13 Kabushiki Kaisha Toshiba Wavelength-tunable semiconductor laser
DE69317140T2 (de) * 1992-04-15 1998-09-03 Furukawa Electric Co Ltd Halbleiterlaservorrichtung
JP3195159B2 (ja) * 1993-11-25 2001-08-06 株式会社東芝 光半導体素子
JP3274605B2 (ja) * 1996-05-01 2002-04-15 日本無線株式会社 炭素同位体分析装置
JPH11326199A (ja) * 1998-05-07 1999-11-26 Anritsu Corp ガス検知装置
JP3481458B2 (ja) * 1998-05-14 2003-12-22 アンリツ株式会社 半導体レーザ
JP2000206035A (ja) * 1999-01-19 2000-07-28 Anritsu Corp ガス検出装置
JP3778260B2 (ja) * 2000-08-16 2006-05-24 日本電気株式会社 半導体レーザとこれを用いたデジタル光通信システムと方法
JP5143985B2 (ja) * 2001-08-10 2013-02-13 古河電気工業株式会社 分布帰還型半導体レーザ素子
JP2003234541A (ja) * 2001-12-07 2003-08-22 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子

Also Published As

Publication number Publication date
CN1765037A (zh) 2006-04-26
NO20054737D0 (no) 2005-10-14
JP2005229011A (ja) 2005-08-25
EP1717918A1 (en) 2006-11-02
US20060187976A1 (en) 2006-08-24
WO2005078880A1 (ja) 2005-08-25
EP1717918A4 (en) 2007-05-16

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