NO20051523L - Nanoktystallelektonanordning - Google Patents
NanoktystallelektonanordningInfo
- Publication number
- NO20051523L NO20051523L NO20051523A NO20051523A NO20051523L NO 20051523 L NO20051523 L NO 20051523L NO 20051523 A NO20051523 A NO 20051523A NO 20051523 A NO20051523 A NO 20051523A NO 20051523 L NO20051523 L NO 20051523L
- Authority
- NO
- Norway
- Prior art keywords
- layer
- charge
- conductivity
- reservoir layer
- port
- Prior art date
Links
- 239000002159 nanocrystal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
- H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/227,061 US6690059B1 (en) | 2002-08-22 | 2002-08-22 | Nanocrystal electron device |
| PCT/US2003/021464 WO2004019373A2 (en) | 2002-08-22 | 2003-07-09 | Nanocrystal electron device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO20051523D0 NO20051523D0 (no) | 2005-03-22 |
| NO20051523L true NO20051523L (no) | 2005-03-22 |
Family
ID=30770661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20051523A NO20051523L (no) | 2002-08-22 | 2005-03-22 | Nanoktystallelektonanordning |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6690059B1 (de) |
| EP (1) | EP1540710A4 (de) |
| JP (1) | JP2005536888A (de) |
| KR (1) | KR20050053626A (de) |
| CN (1) | CN1327512C (de) |
| AU (1) | AU2003253848A1 (de) |
| CA (1) | CA2496032A1 (de) |
| NO (1) | NO20051523L (de) |
| TW (1) | TWI225286B (de) |
| WO (1) | WO2004019373A2 (de) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7105425B1 (en) * | 2002-05-16 | 2006-09-12 | Advanced Micro Devices, Inc. | Single electron devices formed by laser thermal annealing |
| KR100973282B1 (ko) * | 2003-05-20 | 2010-07-30 | 삼성전자주식회사 | 나노 결정층을 구비하는 소노스 메모리 장치 |
| US6962850B2 (en) * | 2003-10-01 | 2005-11-08 | Chartered Semiconductor Manufacturing Ltd. | Process to manufacture nonvolatile MOS memory device |
| US6991984B2 (en) * | 2004-01-27 | 2006-01-31 | Freescale Semiconductor, Inc. | Method for forming a memory structure using a modified surface topography and structure thereof |
| KR100601943B1 (ko) * | 2004-03-04 | 2006-07-14 | 삼성전자주식회사 | 고르게 분포된 실리콘 나노 도트가 포함된 게이트를구비하는 메모리 소자의 제조 방법 |
| US8828792B2 (en) * | 2004-05-25 | 2014-09-09 | The Trustees Of The University Of Pennsylvania | Nanostructure assemblies, methods and devices thereof |
| US7405002B2 (en) * | 2004-08-04 | 2008-07-29 | Agency For Science, Technology And Research | Coated water-soluble nanoparticles comprising semiconductor core and silica coating |
| US7301197B2 (en) * | 2004-09-21 | 2007-11-27 | Atmel Corporation | Non-volatile nanocrystal memory transistors using low voltage impact ionization |
| US7534489B2 (en) * | 2004-09-24 | 2009-05-19 | Agency For Science, Technology And Research | Coated composites of magnetic material and quantum dots |
| US7183180B2 (en) * | 2004-10-13 | 2007-02-27 | Atmel Corporation | Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device |
| US20060140009A1 (en) * | 2004-12-23 | 2006-06-29 | Bohumil Lojek | Programming method for nanocrystal memory device |
| US7101760B1 (en) | 2005-03-31 | 2006-09-05 | Atmel Corporation | Charge trapping nanocrystal dielectric for non-volatile memory transistor |
| US20060220094A1 (en) * | 2005-03-31 | 2006-10-05 | Bohumil Lojek | Non-volatile memory transistor with nanotube floating gate |
| US20060231889A1 (en) * | 2005-04-13 | 2006-10-19 | Tupei Chen | Two-terminal solid-state memory device and two-terminal flexible memory device based on nanocrystals or nanoparticles |
| TWI289336B (en) * | 2005-11-07 | 2007-11-01 | Ind Tech Res Inst | Nanocrystal memory component, manufacturing method thereof and memory comprising the same |
| KR100690925B1 (ko) * | 2005-12-01 | 2007-03-09 | 삼성전자주식회사 | 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법 |
| US7482651B2 (en) * | 2005-12-09 | 2009-01-27 | Micron Technology, Inc. | Enhanced multi-bit non-volatile memory device with resonant tunnel barrier |
| KR100837413B1 (ko) * | 2006-02-28 | 2008-06-12 | 삼성전자주식회사 | 나노결정을 포함하는 메모리 소자 제조 방법 및 이에 의해제조된 메모리 소자 |
| KR100735534B1 (ko) * | 2006-04-04 | 2007-07-04 | 삼성전자주식회사 | 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법 |
| KR100884240B1 (ko) * | 2006-10-20 | 2009-02-17 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
| US7557008B2 (en) * | 2007-01-23 | 2009-07-07 | Freescale Semiconductor, Inc. | Method of making a non-volatile memory device |
| GB0801494D0 (en) | 2007-02-23 | 2008-03-05 | Univ Ind & Acad Collaboration | Nonvolatile memory electronic device using nanowire used as charge channel and nanoparticles used as charge trap and method for manufacturing the same |
| KR100850905B1 (ko) * | 2007-02-23 | 2008-08-07 | 고려대학교 산학협력단 | 나노선나노입자 이종결합의 비휘발성 메모리 전자소자 및그 제조방법 |
| JP2009130120A (ja) * | 2007-11-22 | 2009-06-11 | Toshiba Corp | 半導体装置 |
| KR101155108B1 (ko) * | 2009-04-30 | 2012-06-11 | 국민대학교산학협력단 | 전하저장층 및 그의 형성 방법, 이를 이용한 비휘발성 메모리 장치 및 그의 제조 방법 |
| JP5537130B2 (ja) * | 2009-11-25 | 2014-07-02 | 株式会社東芝 | 半導体記憶装置 |
| US8536039B2 (en) * | 2010-03-25 | 2013-09-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Nano-crystal gate structure for non-volatile memory |
| CN102543696B (zh) * | 2010-12-17 | 2014-12-17 | 中国科学院微电子研究所 | 一种半导体器件的制造方法 |
| DE102013211360A1 (de) | 2013-06-18 | 2014-12-18 | Robert Bosch Gmbh | Halbleiter-Leistungsschalter und Verfahren zur Herstellung eines Halbleiter-Leistungsschalters |
| CN112735272B (zh) * | 2020-12-30 | 2022-05-17 | 武汉华星光电技术有限公司 | 显示面板及显示装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3878549A (en) * | 1970-10-27 | 1975-04-15 | Shumpei Yamazaki | Semiconductor memories |
| US5714766A (en) * | 1995-09-29 | 1998-02-03 | International Business Machines Corporation | Nano-structure memory device |
| US5852306A (en) | 1997-01-29 | 1998-12-22 | Micron Technology, Inc. | Flash memory with nanocrystalline silicon film floating gate |
| US6054349A (en) | 1997-06-12 | 2000-04-25 | Fujitsu Limited | Single-electron device including therein nanocrystals |
| US6232643B1 (en) | 1997-11-13 | 2001-05-15 | Micron Technology, Inc. | Memory using insulator traps |
| JPH11186421A (ja) * | 1997-12-25 | 1999-07-09 | Sony Corp | 不揮発性半導体記憶装置及びその書き込み消去方法 |
| KR100294691B1 (ko) * | 1998-06-29 | 2001-07-12 | 김영환 | 다중층양자점을이용한메모리소자및제조방법 |
| TW386314B (en) | 1998-09-19 | 2000-04-01 | United Microelectronics Corp | Structure of low power, high efficiency programmable erasable non-volatile memory cell and production method thereof |
| WO2001006570A1 (de) * | 1999-07-20 | 2001-01-25 | Infineon Technologies Ag | Nichtflüchtige halbleiterspeicherzelle und verfahren zur herstellung derselben |
| US6320784B1 (en) | 2000-03-14 | 2001-11-20 | Motorola, Inc. | Memory cell and method for programming thereof |
| JP2001332636A (ja) * | 2000-05-19 | 2001-11-30 | Nec Corp | 不揮発性メモリ素子の構造とその製造方法 |
| US6344403B1 (en) | 2000-06-16 | 2002-02-05 | Motorola, Inc. | Memory device and method for manufacture |
| US6723606B2 (en) * | 2000-06-29 | 2004-04-20 | California Institute Of Technology | Aerosol process for fabricating discontinuous floating gate microelectronic devices |
| CN1305232A (zh) * | 2001-02-27 | 2001-07-25 | 南京大学 | 锗/硅复合纳米晶粒浮栅结构mosfet存储器 |
-
2002
- 2002-08-22 US US10/227,061 patent/US6690059B1/en not_active Expired - Lifetime
-
2003
- 2003-07-09 EP EP03792961A patent/EP1540710A4/de not_active Withdrawn
- 2003-07-09 CA CA002496032A patent/CA2496032A1/en not_active Abandoned
- 2003-07-09 KR KR1020057002877A patent/KR20050053626A/ko not_active Withdrawn
- 2003-07-09 AU AU2003253848A patent/AU2003253848A1/en not_active Abandoned
- 2003-07-09 CN CNB038196875A patent/CN1327512C/zh not_active Expired - Fee Related
- 2003-07-09 WO PCT/US2003/021464 patent/WO2004019373A2/en not_active Ceased
- 2003-07-09 JP JP2004530819A patent/JP2005536888A/ja not_active Withdrawn
- 2003-07-30 TW TW092120781A patent/TWI225286B/zh not_active IP Right Cessation
-
2005
- 2005-03-22 NO NO20051523A patent/NO20051523L/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NO20051523D0 (no) | 2005-03-22 |
| EP1540710A4 (de) | 2008-11-05 |
| CN1327512C (zh) | 2007-07-18 |
| CN1692494A (zh) | 2005-11-02 |
| JP2005536888A (ja) | 2005-12-02 |
| US6690059B1 (en) | 2004-02-10 |
| AU2003253848A8 (en) | 2004-03-11 |
| WO2004019373A2 (en) | 2004-03-04 |
| EP1540710A2 (de) | 2005-06-15 |
| TWI225286B (en) | 2004-12-11 |
| TW200405525A (en) | 2004-04-01 |
| KR20050053626A (ko) | 2005-06-08 |
| WO2004019373B1 (en) | 2004-07-01 |
| WO2004019373A3 (en) | 2004-05-27 |
| CA2496032A1 (en) | 2004-03-04 |
| AU2003253848A1 (en) | 2004-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NO20051523L (no) | Nanoktystallelektonanordning | |
| US10896916B2 (en) | Reverse memory cell | |
| TW540055B (en) | Usage of word voltage assistance in twin MONOS cell during program and erase | |
| US8824212B2 (en) | Thermally assisted flash memory with segmented word lines | |
| US7476586B2 (en) | NOR flash memory cell with high storage density | |
| CN101414479B (zh) | 在绝缘体随机存取存储器上的单一晶体管存储单元 | |
| JP2018530163A5 (de) | ||
| US20130100743A1 (en) | Method for operating a semiconductor structure | |
| TW430997B (en) | Nonvolatile semiconductor memory device and method for driving the same | |
| TW393779B (en) | A method of erasing a flash EEPROM memory | |
| US9818484B2 (en) | Systems, methods, and apparatus for memory cells with common source lines | |
| TW200707763A (en) | Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer | |
| TWI268623B (en) | Semiconductor integrated circuit device and method of manufacturing the same reading memory information at high speed from the transistor-carried nonvolatile memory cell transistor | |
| KR20080016746A (ko) | 고 유전율 유전체에서의 정공 포획을 이용하는 메모리 | |
| US10317846B2 (en) | EEPROM cell with charge loss | |
| WO2005109437A3 (en) | Pfet nonvolatile memory | |
| JP2009537932A (ja) | Ｓｏｎｏｓメモリデバイス及びｓｏｎｏｓメモリデバイスの作動方法 | |
| JPH06302828A (ja) | 半導体不揮発性記憶装置 | |
| US5999453A (en) | Nonvolatile semiconductor memory | |
| JPH10334678A5 (de) | ||
| JP3175665B2 (ja) | 不揮発性半導体記憶装置のデータ消去方法 | |
| US6760270B2 (en) | Erase of a non-volatile memory | |
| US6049484A (en) | Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase | |
| US6128223A (en) | Semiconductor memory device | |
| JP2010157733A (ja) | 半導体メモリセル及び半導体メモリセルの製造方法、半導体メモリセルの動作方法 |