NO20050280L - Rekkedekoderkrets for bruk i programmering av en minneanordning - Google Patents

Rekkedekoderkrets for bruk i programmering av en minneanordning

Info

Publication number
NO20050280L
NO20050280L NO20050280A NO20050280A NO20050280L NO 20050280 L NO20050280 L NO 20050280L NO 20050280 A NO20050280 A NO 20050280A NO 20050280 A NO20050280 A NO 20050280A NO 20050280 L NO20050280 L NO 20050280L
Authority
NO
Norway
Prior art keywords
programming
memory cell
read
verify
memory device
Prior art date
Application number
NO20050280A
Other languages
English (en)
Inventor
Danut I Manea
Original Assignee
Atmel Corp A Delaware Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp A Delaware Corp filed Critical Atmel Corp A Delaware Corp
Publication of NO20050280L publication Critical patent/NO20050280L/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)

Abstract

En rekkedekoderkrets (14) for bruk ved programmering av en minneanordning. Rekkedekoderkretsen inkluderer et middel (13) for valg av ordlinjen for en miimecelle som skal programmeres og en ordlinje for en miimecelle som skal programmeres og en ordlinjedriverkrets (100) som svitsjer (15, 19) mellom en første spenningsforsyningslinje (18) som leverer en programmeringsspeiming (Vprogram) og en andre spenningsforsyningslinje (16) som leverer en les/verifiseringsspeiming (Vverify) for å skaffe til veie enten programmeringsspeimingen eller les/verifiseringsspeimingen til porten for en valgt miimecelle på ordlinjen (17). Denne svitsjing mellom programmering og les/verifiseringsspeiming resulterer i programmeringspulser som blir brukt for å pro- grammere den valgte miimecelle. Den foreliggende oppfinnelse mottar kortere programmeringspulser og gir raskere hastighet samlet sett ved programmering av miimecelle.
NO20050280A 2002-06-18 2005-01-18 Rekkedekoderkrets for bruk i programmering av en minneanordning NO20050280L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/174,632 US6621745B1 (en) 2002-06-18 2002-06-18 Row decoder circuit for use in programming a memory device
PCT/US2003/011463 WO2003107353A1 (en) 2002-06-18 2003-04-14 Row decoder circuit for use in programming a memory device

Publications (1)

Publication Number Publication Date
NO20050280L true NO20050280L (no) 2005-01-18

Family

ID=27804700

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20050280A NO20050280L (no) 2002-06-18 2005-01-18 Rekkedekoderkrets for bruk i programmering av en minneanordning

Country Status (9)

Country Link
US (1) US6621745B1 (no)
EP (1) EP1532634A4 (no)
JP (1) JP2005530298A (no)
CN (1) CN100424785C (no)
AU (1) AU2003224967A1 (no)
CA (1) CA2489766A1 (no)
NO (1) NO20050280L (no)
TW (1) TWI238417B (no)
WO (1) WO2003107353A1 (no)

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JP4503809B2 (ja) * 2000-10-31 2010-07-14 株式会社東芝 半導体記憶装置
JP3965287B2 (ja) * 2001-10-09 2007-08-29 シャープ株式会社 不揮発性半導体記憶装置およびその書き込み時間決定方法
US7319616B2 (en) * 2003-11-13 2008-01-15 Intel Corporation Negatively biasing deselected memory cells
JP2006059490A (ja) * 2004-08-23 2006-03-02 Toshiba Corp 半導体記憶装置
US7345946B1 (en) * 2004-09-24 2008-03-18 Cypress Semiconductor Corporation Dual-voltage wordline drive circuit with two stage discharge
US7289351B1 (en) * 2005-06-24 2007-10-30 Spansion Llc Method of programming a resistive memory device
US8279704B2 (en) * 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
US7525869B2 (en) * 2006-12-31 2009-04-28 Sandisk 3D Llc Method for using a reversible polarity decoder circuit
KR101376213B1 (ko) * 2006-12-31 2014-03-21 쌘디스크 3디 엘엘씨 반전 가능 극성 디코더 회로 및 관련 방법
US7542370B2 (en) * 2006-12-31 2009-06-02 Sandisk 3D Llc Reversible polarity decoder circuit
US8301912B2 (en) * 2007-12-31 2012-10-30 Sandisk Technologies Inc. System, method and memory device providing data scrambling compatible with on-chip copy operation
US7916544B2 (en) 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
US7796436B2 (en) * 2008-07-03 2010-09-14 Macronix International Co., Ltd. Reading method for MLC memory and reading circuit using the same
US8139426B2 (en) * 2008-08-15 2012-03-20 Qualcomm Incorporated Dual power scheme in memory circuit
TWI399758B (zh) * 2009-01-23 2013-06-21 Elite Semiconductor Esmt 字線解碼器電路
US8837226B2 (en) * 2011-11-01 2014-09-16 Apple Inc. Memory including a reduced leakage wordline driver
CN103730157A (zh) * 2012-10-12 2014-04-16 上海华虹集成电路有限责任公司 用于Flash EEPROM的字线驱动电路
US8737137B1 (en) 2013-01-22 2014-05-27 Freescale Semiconductor, Inc. Flash memory with bias voltage for word line/row driver
US9224486B1 (en) 2014-06-20 2015-12-29 Freescale Semiconductor, Inc. Control gate driver for use with split gate memory cells
US9431111B2 (en) * 2014-07-08 2016-08-30 Ememory Technology Inc. One time programming memory cell, array structure and operating method thereof
US9449703B1 (en) 2015-06-09 2016-09-20 Freescale Semiconductor, Inc. Systems and methods for driving a control gate with a select gate signal in a split-gate nonvolatile memory cell
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
CN107481748B (zh) * 2016-06-07 2020-06-05 中芯国际集成电路制造(上海)有限公司 一种字线电压生成电路、半导体器件及电子装置
CN106158022B (zh) * 2016-07-22 2019-12-24 上海华力微电子有限公司 一种用于共源架构嵌入式闪存的字线驱动电路及其方法
US11114148B1 (en) * 2020-04-16 2021-09-07 Wuxi Petabyte Technologies Co., Ltd. Efficient ferroelectric random-access memory wordline driver, decoder, and related circuits
JP7512702B2 (ja) * 2020-06-19 2024-07-09 Ｔｏｐｐａｎホールディングス株式会社 シフトレジスタ、及び表示装置

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JP3737525B2 (ja) * 1994-03-11 2006-01-18 株式会社東芝 半導体記憶装置
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
JPH09161476A (ja) * 1995-10-04 1997-06-20 Toshiba Corp 半導体メモリ及びそのテスト回路、並びにデ−タ転送システム
KR0172401B1 (ko) * 1995-12-07 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 장치
DE19612456C2 (de) * 1996-03-28 2000-09-28 Siemens Ag Halbleiterspeichervorrichtung
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JPH1153891A (ja) * 1997-08-05 1999-02-26 Oki Micro Design Miyazaki:Kk 半導体記憶装置
US5978277A (en) 1998-04-06 1999-11-02 Aplus Flash Technology, Inc. Bias condition and X-decoder circuit of flash memory array
JPH11317085A (ja) 1998-05-08 1999-11-16 Sony Corp プログラム・ベリファイ回路及びプログラム・ベリファイ方法
EP0961288B1 (en) * 1998-05-29 2004-05-19 STMicroelectronics S.r.l. Monolithically integrated selector for electrically programmable memory cells devices
EP1061525B1 (en) 1999-06-17 2006-03-08 STMicroelectronics S.r.l. Row decoder for a nonvolatile memory with possibility of selectively biasing word lines to positive or negative voltages
JP3776307B2 (ja) * 2000-04-26 2006-05-17 沖電気工業株式会社 不揮発性メモリアナログ電圧書き込み回路

Also Published As

Publication number Publication date
EP1532634A4 (en) 2006-05-10
WO2003107353A1 (en) 2003-12-24
US6621745B1 (en) 2003-09-16
CN100424785C (zh) 2008-10-08
EP1532634A1 (en) 2005-05-25
CN1675718A (zh) 2005-09-28
JP2005530298A (ja) 2005-10-06
TW200400517A (en) 2004-01-01
TWI238417B (en) 2005-08-21
AU2003224967A1 (en) 2003-12-31
CA2489766A1 (en) 2003-12-24

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