NO123356B - - Google Patents

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Publication number
NO123356B
NO123356B NO1629/68A NO162968A NO123356B NO 123356 B NO123356 B NO 123356B NO 1629/68 A NO1629/68 A NO 1629/68A NO 162968 A NO162968 A NO 162968A NO 123356 B NO123356 B NO 123356B
Authority
NO
Norway
Prior art keywords
mixing
department
wheel
paddle
clear
Prior art date
Application number
NO1629/68A
Other languages
English (en)
Inventor
S Davis
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of NO123356B publication Critical patent/NO123356B/no

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658Vertical bipolar transistor in combination with resistors or capacitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/901Capacitive junction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/965Shaped junction formation

Description

Blande- oe klareapnaral.
Foreliggende oppfinnelse angår et blande- og klareapparat. Væskestrømmen gjennom et blande- og klareapparat kan skje ved fallvirkning (d.v.s. vertikalt eller skråttstillet apparat) eller ved løfting under blandingen (eksempelvis ved hjelp av luft, sentrifugalpumpe, eller skrue). Foreliggende oppfinnelse går ut på et blande-og klareapparat hvor væskestrømmene oppnås i et apparat som er anordnet horisontalt og uten bruk av positive løfte-an-ordninger. Den horisontale anordning gjør det mulig å forenkle utførelsen sammen-liknet med vertikale eller skrå apparater, og den omstendighet at det ikke brukes positive løfteanordninger nedsetter vedli-keholdsarbeidet sammenlignet med apparater hvor det brukes luft-løfting, centri-fugalpumpe, skrue eller andre positive løf-teanordninger.
I henhold til oppfinnelsen har blande-og klareapparatet i hver blandeavdeling to skovlhjul som er innrettet til å rotere om en vertikal aksel, og som er anordnet over og under en åpning mellom blandeavdelingen og den tilhørende klareavdeling, samtidig som de to skovlhjul er anordnet slik at det øverste driver nedover og det nederste driver oppover.
En utførelsesform av et blande- og klareapparat i henhold til oppfinnelsen er vist på vedføyete tegning, hvor fig. 1 viser apparatet sett forfra med en del bortskåret, fig. 2 viser et skovlhjul sett fra siden, og fig. 3 viser skovlhjulet sett fra enden av en skovl.
Som vist i fig. 1 omfatter blande- og klareapparatet fire trinn, nemlig blande-
avdelinger 10 og klareavdelinger 11 som er anordnet på vanlig måte. I hver blandeavdeling er det anordnet et ganske enkelt dobbeltskovlhjul med en vertikal aksel 12 som bærer et øvre skovlhjul 13 og et undre
skovlhjul 14. Mellom skovlhjulene 13 og 14
er vist en åpning 15 som forbinder blandeavdelingen med den tilhørende klareavdeling. Som vist i fig. 2 og 3 har skovlhjulene et nav 16 med rektangulært tverrsnitt og forsynt med en boring 17 som opptar akslen 12. En settskrue 18 holder hjulet på plass.
Navet 16 er forsynt med to rektangu-lære skovler 19, 20 som er festet ved svei-sing og er skråttstillet slik som vist i fig. 3. Skovlhjulet 13 er forsynt med skovler med stigning som er motsatt av stigningen på skovlene på hjulet 14 slik at når akselen 12 roterer i den riktige retning, vil hjulet 13 drive væskene i blandeavdelingen nedover og hjulet 14 vil drive væskene oppover og derved frembringe blandingen.
De andre konstruktive trekk skal nå
beskrives.
Blande-klareren er innbygget i en be-holder 21 og er forsynt med en innløpsåp-ning 22 for den lette fase, og en tilsvaren-de utløpsåpning 23, en innløpsåpning 24 for den tunge fase, som føres inn i en blandeavdeling bak klareren 11, og en til-svarende utløpsåpning 25 fra den siste klareavdeling. Åpningene 23, 25 har utløps-kasser 26 henhv. 27. Mellom blandeavdelingene 10 og de tilstøtende klareavdelinger 11 er det anordnet regulerbare sluseåpnin-ger 28 for den lette fase og åpninger 28 for den tunge fase forsynt med hetter 30. Akslene 12 drives av en elektromotor 31 som over en kjede 32 driver en hovedaksel 33 som er lagret i lagre 34, 35, anbragt på bjelker 38. Fra akslen 33 tas det ut kjede-drift gjennom kjedehjul 36 til koniske tannhjul 37 som er sammenkoblet med akslene 12 og anordnet på knekter 39.
I en alternativ anordning er skovi-hjulene 13 og 14 anbragt på særskilte aks-ler og med tilpasset drivanordning.
Bevegelsen av væskene er antydet ved hjelp av piler. Væskenivået er angitt ved strek-punkterte linjer.
Den hovedsakelige virkning av skovl-hjulen i blandeavdelingene består i å drive den tunge fase som kommer inn i blandeavdelingene oppover inn i den lette fase, og drive den lette fase som kommer inn i blandeavdelingene nedover inn i den tunge fase, hvorved man oppnår en intim blan-ding.
Akslen 12 utfører 300 omdr/min og gjennomstrømningsmengden i blande-klareren er ca. 3 ms/time med totaldimen-sjoner: lengde 2,1 m, høyde 0,68 m og bred-de 1,6 m.

Claims (2)

1. Horisontalt blande- og klareapparat for vesker, med en eller flere blande-avdelinger med tilhørende klareavdelinger, karakterisert ved at det i hver blandeavdeling (10) er anordnet to skovlhjul (13, 14) som kan rotere om en vertikal aksel, og anordnet over henhv. under en åpning (15) mellom blandeavdelingen (10) og den tilsluttende klareavdeling (11), samtidig som det øvre skovlhjul (13) er innrettet til å drive nedover, og det nedre skovlhjul (14) er innrettet til å drive oppover.
2. Blande- og klareapparat som angitt i påstand 1, karakterisert ved at skovlhjulene (13, 14) er anordnet på en felles aksel (12) og med motsatte stigningsret-ninger.
NO1629/68A 1967-05-09 1968-04-26 NO123356B (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63714467A 1967-05-09 1967-05-09

Publications (1)

Publication Number Publication Date
NO123356B true NO123356B (no) 1971-11-01

Family

ID=24554725

Family Applications (1)

Application Number Title Priority Date Filing Date
NO1629/68A NO123356B (no) 1967-05-09 1968-04-26

Country Status (9)

Country Link
US (1) US3538397A (no)
CH (1) CH492307A (no)
DE (1) DE1764274C3 (no)
FR (1) FR1563412A (no)
GB (1) GB1229045A (no)
IE (1) IE31890B1 (no)
IL (1) IL29898A (no)
NL (1) NL6806437A (no)
NO (1) NO123356B (no)

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US3639814A (en) * 1967-05-24 1972-02-01 Telefunken Patent Integrated semiconductor circuit having increased barrier layer capacitance
US3656028A (en) * 1969-05-12 1972-04-11 Ibm Construction of monolithic chip and method of distributing power therein for individual electronic devices constructed thereon
BE758719A (fr) * 1969-11-11 1971-05-10 Philips Nv Dispositif semiconducteur
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
US3619735A (en) * 1970-01-26 1971-11-09 Ibm Integrated circuit with buried decoupling capacitor
US3611058A (en) * 1970-05-11 1971-10-05 Gen Motors Corp Varactor diode
GB1393027A (en) * 1972-05-30 1975-05-07 Ferranti Ltd Semiconductor devices
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
US3866066A (en) * 1973-07-16 1975-02-11 Bell Telephone Labor Inc Power supply distribution for integrated circuits
US3969750A (en) * 1974-02-12 1976-07-13 International Business Machines Corporation Diffused junction capacitor and process for producing the same
US4980747A (en) * 1986-12-22 1990-12-25 Texas Instruments Inc. Deep trench isolation with surface contact to substrate
US6124625A (en) * 1988-05-31 2000-09-26 Micron Technology, Inc. Chip decoupling capacitor
US5687109A (en) 1988-05-31 1997-11-11 Micron Technology, Inc. Integrated circuit module having on-chip surge capacitors
US5338966A (en) * 1989-09-21 1994-08-16 Toko Kabushiki Kaisha Variable capacitance diode device
US5027183A (en) * 1990-04-20 1991-06-25 International Business Machines Isolated semiconductor macro circuit
US6114756A (en) 1998-04-01 2000-09-05 Micron Technology, Inc. Interdigitated capacitor design for integrated circuit leadframes
US6414391B1 (en) * 1998-06-30 2002-07-02 Micron Technology, Inc. Module assembly for stacked BGA packages with a common bus bar in the assembly
JP3678212B2 (ja) * 2002-05-20 2005-08-03 ウシオ電機株式会社 超高圧水銀ランプ
US6755700B2 (en) * 2002-11-12 2004-06-29 Modevation Enterprises Inc. Reset speed control for watercraft

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US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3309537A (en) * 1964-11-27 1967-03-14 Honeywell Inc Multiple stage semiconductor circuits and integrated circuit stages
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones

Also Published As

Publication number Publication date
DE1764274A1 (de) 1972-03-30
NL6806437A (no) 1968-11-11
IE31890B1 (en) 1973-02-07
DE1764274B2 (de) 1974-06-27
DE1764274C3 (de) 1975-02-27
FR1563412A (no) 1969-04-11
GB1229045A (no) 1971-04-21
IE31890L (en) 1968-11-09
US3538397A (en) 1970-11-03
IL29898A0 (en) 1968-06-20
IL29898A (en) 1971-06-23
CH492307A (fr) 1970-06-15

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