NL99619C - - Google Patents

Info

Publication number
NL99619C
NL99619C NL99619DA NL99619C NL 99619 C NL99619 C NL 99619C NL 99619D A NL99619D A NL 99619DA NL 99619 C NL99619 C NL 99619C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL99619C publication Critical patent/NL99619C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B9/00—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
    • F25B9/002—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the refrigerant
    • F25B9/006—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point characterised by the refrigerant the refrigerant containing more than one component
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/141—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Glass Compositions (AREA)
  • Devices That Are Associated With Refrigeration Equipment (AREA)
  • Resistance Heating (AREA)
  • Photovoltaic Devices (AREA)
NL99619D 1955-06-28 NL99619C (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US518556A US2794846A (en) 1955-06-28 1955-06-28 Fabrication of semiconductor devices

Publications (1)

Publication Number Publication Date
NL99619C true NL99619C (en:Method)

Family

ID=24064454

Family Applications (2)

Application Number Title Priority Date Filing Date
NL99619D NL99619C (en:Method) 1955-06-28
NL207969D NL207969A (en:Method) 1955-06-28

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL207969D NL207969A (en:Method) 1955-06-28

Country Status (8)

Country Link
US (2) US2794322A (en:Method)
JP (1) JPS321180B1 (en:Method)
BE (1) BE548647A (en:Method)
CH (1) CH361340A (en:Method)
DE (1) DE1046785B (en:Method)
FR (1) FR1154322A (en:Method)
GB (1) GB816799A (en:Method)
NL (2) NL207969A (en:Method)

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DE1444521B2 (de) * 1962-02-01 1971-02-25 Siemens AG, 1000 Berlin u 8000 München Verfahren zur herstellung einer halbleiteranordnung
US3411952A (en) * 1962-04-02 1968-11-19 Globe Union Inc Photovoltaic cell and solar cell panel
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BE639315A (en:Method) * 1962-10-31
DE1241468B (de) * 1962-12-01 1967-06-01 Andrija Fuderer Dr Ing Kompressionsverfahren zur Kaelterzeugung
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US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device
US3421943A (en) * 1964-02-14 1969-01-14 Westinghouse Electric Corp Solar cell panel having cell edge and base metal electrical connections
US3359137A (en) * 1964-03-19 1967-12-19 Electro Optical Systems Inc Solar cell configuration
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US3371213A (en) * 1964-06-26 1968-02-27 Texas Instruments Inc Epitaxially immersed lens and photodetectors and methods of making same
US3436549A (en) * 1964-11-06 1969-04-01 Texas Instruments Inc P-n photocell epitaxially deposited on transparent substrate and method for making same
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US3472698A (en) * 1967-05-18 1969-10-14 Nasa Silicon solar cell with cover glass bonded to cell by metal pattern
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JP4868079B1 (ja) * 2010-01-25 2012-02-01 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP5447397B2 (ja) * 2010-02-03 2014-03-19 日立化成株式会社 ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
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KR101484833B1 (ko) * 2010-04-23 2015-01-21 히타치가세이가부시끼가이샤 ｎ 형 확산층 형성 조성물, ｎ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법
JP5541358B2 (ja) * 2010-04-23 2014-07-09 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
TW201624545A (zh) * 2010-04-23 2016-07-01 日立化成工業股份有限公司 形成p型擴散層的組成物、p型擴散層的製造方法及太陽電池元件的製造方法
TWI541869B (zh) * 2010-04-23 2016-07-11 日立化成股份有限公司 形成ｐ型擴散層的組成物、ｐ型擴散層的製造方法及太陽電池元件的製造方法
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JP5573945B2 (ja) * 2010-04-23 2014-08-20 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP5803080B2 (ja) * 2010-09-24 2015-11-04 日立化成株式会社 ｐ型拡散層形成組成物、ｐ型拡散層形成組成物の製造方法、ｐ型拡散層の製造方法、及び太陽電池セルの製造方法
CN103299399A (zh) * 2011-01-13 2013-09-11 日立化成株式会社 p型扩散层形成用组合物、p型扩散层的制造方法和太阳能电池元件的制造方法
WO2012111575A1 (ja) * 2011-02-17 2012-08-23 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
JP2012231012A (ja) * 2011-04-26 2012-11-22 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2012234990A (ja) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2012234989A (ja) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2013026344A (ja) * 2011-07-19 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層の製造方法、太陽電池素子の製造方法、および太陽電池素子
WO2013011986A1 (ja) * 2011-07-19 2013-01-24 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2013026343A (ja) * 2011-07-19 2013-02-04 Hitachi Chem Co Ltd ｐ型拡散層の製造方法、太陽電池素子の製造方法、および太陽電池素子
JP5935254B2 (ja) * 2011-07-21 2016-06-15 日立化成株式会社 不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法および太陽電池の製造方法
JP5842432B2 (ja) * 2011-07-22 2016-01-13 日立化成株式会社 ｐ型拡散層の製造方法、及び太陽電池素子の製造方法
JP5935255B2 (ja) * 2011-07-22 2016-06-15 日立化成株式会社 インクジェット用不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法及び太陽電池の製造方法
JP5842431B2 (ja) * 2011-07-22 2016-01-13 日立化成株式会社 ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JPWO2013015284A1 (ja) * 2011-07-25 2015-02-23 日立化成株式会社 半導体基板及びその製造方法、太陽電池素子、並びに太陽電池
TW201331991A (zh) * 2012-01-10 2013-08-01 日立化成股份有限公司 ｎ型擴散層形成組成物、ｎ型擴散層形成組成物套組、帶有ｎ型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法
JP2015053401A (ja) * 2013-09-06 2015-03-19 日立化成株式会社 ｐ型拡散層を有する半導体基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
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JP2015179866A (ja) * 2015-05-25 2015-10-08 日立化成株式会社 ｐ型拡散層形成組成物、並びに、太陽電池セルおよびその製造方法
JP2016006893A (ja) * 2015-08-03 2016-01-14 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
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CN106784137B (zh) * 2016-11-30 2019-07-09 浙江晶科能源有限公司 一种电池片pn结边缘隔离的装置和方法
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CN118202443A (zh) * 2021-11-05 2024-06-14 东丽株式会社 p型杂质扩散组合物、使用其的太阳能电池的制造方法

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Also Published As

Publication number Publication date
US2794322A (en) 1957-06-04
NL207969A (en:Method)
BE548647A (en:Method)
DE1046785B (de) 1958-12-18
FR1154322A (fr) 1958-04-04
JPS321180B1 (en:Method) 1957-02-19
CH361340A (fr) 1962-04-15
US2794846A (en) 1957-06-04
GB816799A (en) 1959-07-22

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AT197696B (en:Method)
AT195161B (en:Method)
AT196487B (en:Method)
AT195329B (en:Method)
AT195450B (en:Method)
AT195570B (en:Method)
AT195039B (en:Method)
AT195620B (en:Method)
AT195663B (en:Method)
AT195705B (en:Method)
AT194962B (en:Method)
AT195857B (en:Method)
AT195858B (en:Method)
AT194664B (en:Method)
AT197933B (en:Method)