BE524376A - - Google Patents
Info
- Publication number
- BE524376A BE524376A BE524376DA BE524376A BE 524376 A BE524376 A BE 524376A BE 524376D A BE524376D A BE 524376DA BE 524376 A BE524376 A BE 524376A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
-
- H10P95/50—
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US321262A US2705767A (en) | 1952-11-18 | 1952-11-18 | P-n junction transistor |
| US439319A US2717343A (en) | 1952-11-18 | 1954-06-25 | P-n junction transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE524376A true BE524376A (en:Method) |
Family
ID=26982893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE524376D BE524376A (en:Method) | 1952-11-18 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2717343A (en:Method) |
| BE (1) | BE524376A (en:Method) |
| FR (1) | FR1094039A (en:Method) |
| GB (1) | GB779146A (en:Method) |
| NL (1) | NL93573C (en:Method) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2870345A (en) * | 1954-02-02 | 1959-01-20 | Philips Corp | Amplification control of a transistor |
| NL99619C (en:Method) * | 1955-06-28 | |||
| BE553205A (en:Method) * | 1955-03-10 | |||
| NL207910A (en:Method) * | 1955-06-20 | |||
| US2894184A (en) * | 1955-06-29 | 1959-07-07 | Hughes Aircraft Co | Electrical characteristics of diodes |
| US3091701A (en) * | 1956-03-26 | 1963-05-28 | Raytheon Co | High frequency response transistors |
| US2988677A (en) * | 1959-05-01 | 1961-06-13 | Ibm | Negative resistance semiconductor device structure |
| US3309568A (en) * | 1964-01-02 | 1967-03-14 | Ford Motor Co | Means including a saturable capacitor for reducing electrical energy dissipation in an electrical switching element |
| DE1803883A1 (de) * | 1968-10-18 | 1970-05-27 | Siemens Ag | Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung |
| US4427457A (en) | 1981-04-07 | 1984-01-24 | Oregon Graduate Center | Method of making depthwise-oriented integrated circuit capacitors |
-
0
- BE BE524376D patent/BE524376A/xx unknown
- NL NL93573D patent/NL93573C/xx active
-
1953
- 1953-11-17 GB GB31883/53A patent/GB779146A/en not_active Expired
- 1953-11-18 FR FR1094039D patent/FR1094039A/fr not_active Expired
-
1954
- 1954-06-25 US US439319A patent/US2717343A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR1094039A (fr) | 1955-05-11 |
| US2717343A (en) | 1955-09-06 |
| GB779146A (en) | 1957-07-17 |
| NL93573C (en:Method) |