BE574814A - - Google Patents

Info

Publication number
BE574814A
BE574814A BE574814DA BE574814A BE 574814 A BE574814 A BE 574814A BE 574814D A BE574814D A BE 574814DA BE 574814 A BE574814 A BE 574814A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE574814A publication Critical patent/BE574814A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
BE574814D 1958-01-16 BE574814A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1561/58A GB911292A (en) 1958-01-16 1958-01-16 Improvements in and relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
BE574814A true BE574814A (en:Method)

Family

ID=9724105

Family Applications (1)

Application Number Title Priority Date Filing Date
BE574814D BE574814A (en:Method) 1958-01-16

Country Status (7)

Country Link
US (1) US3069297A (en:Method)
BE (1) BE574814A (en:Method)
CH (1) CH370165A (en:Method)
DE (1) DE1090770B (en:Method)
FR (1) FR1225692A (en:Method)
GB (1) GB911292A (en:Method)
NL (2) NL235051A (en:Method)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264084A (en:Method) * 1959-06-23
US3276925A (en) * 1959-12-12 1966-10-04 Nippon Electric Co Method of producing tunnel diodes by double alloying
NL258921A (en:Method) 1959-12-14
NL287617A (en:Method) * 1962-01-12
US3243325A (en) * 1962-06-09 1966-03-29 Fujitsu Ltd Method of producing a variable-capacitance germanium diode and product produced thereby
GB1074285A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
DE1232269B (de) * 1963-08-23 1967-01-12 Telefunken Patent Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone
DE1215754B (de) * 1964-02-24 1966-05-05 Danfoss As Elektronischer Schalter
US3335038A (en) 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
DE1614861C3 (de) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors
US3955270A (en) * 1973-08-31 1976-05-11 Bell Telephone Laboratories, Incorporated Methods for making semiconductor devices
US3905162A (en) * 1974-07-23 1975-09-16 Silicon Material Inc Method of preparing high yield semiconductor wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL91651C (en:Method) * 1953-12-09
NL207969A (en:Method) * 1955-06-28
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
BE558436A (en:Method) * 1956-06-18

Also Published As

Publication number Publication date
DE1090770B (de) 1960-10-13
FR1225692A (fr) 1960-07-04
NL121250C (en:Method)
NL235051A (en:Method)
GB911292A (en) 1962-11-21
US3069297A (en) 1962-12-18
CH370165A (de) 1963-06-30

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