NL9002176A - Werkwijze voor het verminderen van deeltjescontaminatie tijdens sputteren en een sputterinrichting voor gebruik van een dergelijke werkwijze. - Google Patents

Werkwijze voor het verminderen van deeltjescontaminatie tijdens sputteren en een sputterinrichting voor gebruik van een dergelijke werkwijze. Download PDF

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Publication number
NL9002176A
NL9002176A NL9002176A NL9002176A NL9002176A NL 9002176 A NL9002176 A NL 9002176A NL 9002176 A NL9002176 A NL 9002176A NL 9002176 A NL9002176 A NL 9002176A NL 9002176 A NL9002176 A NL 9002176A
Authority
NL
Netherlands
Prior art keywords
ions
substrate
gas discharge
chamber
chamber part
Prior art date
Application number
NL9002176A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL9002176A priority Critical patent/NL9002176A/nl
Priority to DE69110394T priority patent/DE69110394T2/de
Priority to EP91202530A priority patent/EP0480504B1/en
Priority to JP25907191A priority patent/JP3659653B2/ja
Publication of NL9002176A publication Critical patent/NL9002176A/nl
Priority to US08/400,783 priority patent/US6059938A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
NL9002176A 1990-10-08 1990-10-08 Werkwijze voor het verminderen van deeltjescontaminatie tijdens sputteren en een sputterinrichting voor gebruik van een dergelijke werkwijze. NL9002176A (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL9002176A NL9002176A (nl) 1990-10-08 1990-10-08 Werkwijze voor het verminderen van deeltjescontaminatie tijdens sputteren en een sputterinrichting voor gebruik van een dergelijke werkwijze.
DE69110394T DE69110394T2 (de) 1990-10-08 1991-09-30 Verfahren zum Verringen von Teilchenkontamination beim Zerstäuben.
EP91202530A EP0480504B1 (en) 1990-10-08 1991-09-30 Method of reducing particle contamination during sputtering
JP25907191A JP3659653B2 (ja) 1990-10-08 1991-10-07 基板上に層を設ける方法およびこれに使用するスパッタリング装置
US08/400,783 US6059938A (en) 1990-10-08 1995-03-06 Method of reducing particle contamination during sputtering

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL9002176 1990-10-08
NL9002176A NL9002176A (nl) 1990-10-08 1990-10-08 Werkwijze voor het verminderen van deeltjescontaminatie tijdens sputteren en een sputterinrichting voor gebruik van een dergelijke werkwijze.

Publications (1)

Publication Number Publication Date
NL9002176A true NL9002176A (nl) 1992-05-06

Family

ID=19857779

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9002176A NL9002176A (nl) 1990-10-08 1990-10-08 Werkwijze voor het verminderen van deeltjescontaminatie tijdens sputteren en een sputterinrichting voor gebruik van een dergelijke werkwijze.

Country Status (5)

Country Link
US (1) US6059938A (ja)
EP (1) EP0480504B1 (ja)
JP (1) JP3659653B2 (ja)
DE (1) DE69110394T2 (ja)
NL (1) NL9002176A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0954620A4 (en) * 1997-01-16 2002-01-02 Bottomfield Layne F COMPONENTS FOR VACUUM EVAPORATION METALLIZATION AND RELATED METHODS
US6645357B2 (en) 2001-11-05 2003-11-11 Applied Materials, Inc. Mesh shield in a sputter reactor
US6863930B2 (en) 2002-09-06 2005-03-08 Delphi Technologies, Inc. Refractory metal mask and methods for coating an article and forming a sensor
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
CN103132032A (zh) * 2013-03-15 2013-06-05 上海和辉光电有限公司 一种用于减少ito溅射损伤衬底的溅射设备及其方法
CN112813389A (zh) * 2019-11-18 2021-05-18 河北召飞科技服务有限公司 一种多弧离子镀膜过程中减少大液滴的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3699034A (en) * 1971-03-15 1972-10-17 Sperry Rand Corp Method for sputter depositing dielectric materials
US3864239A (en) * 1974-04-22 1975-02-04 Nasa Multitarget sequential sputtering apparatus
DD142568A1 (de) * 1979-03-22 1980-07-02 Harald Bilz EINRICHTUNG ZUM REAKTIVEN BESCHICHTEN MIT DEM PLASM&TRON
US4410407A (en) * 1981-12-22 1983-10-18 Raytheon Company Sputtering apparatus and methods
JPH0624345B2 (ja) * 1986-04-28 1994-03-30 日本電気株式会社 予備回線監視回路
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置

Also Published As

Publication number Publication date
EP0480504B1 (en) 1995-06-14
DE69110394T2 (de) 1996-02-08
US6059938A (en) 2000-05-09
JPH04288826A (ja) 1992-10-13
DE69110394D1 (de) 1995-07-20
JP3659653B2 (ja) 2005-06-15
EP0480504A1 (en) 1992-04-15

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BV The patent application has lapsed