NL9000460A - Statische inductietransistor met geisoleerde poort van het trapsnedetype en werkwijze voor het vervaardigen daarvan. - Google Patents
Statische inductietransistor met geisoleerde poort van het trapsnedetype en werkwijze voor het vervaardigen daarvan. Download PDFInfo
- Publication number
- NL9000460A NL9000460A NL9000460A NL9000460A NL9000460A NL 9000460 A NL9000460 A NL 9000460A NL 9000460 A NL9000460 A NL 9000460A NL 9000460 A NL9000460 A NL 9000460A NL 9000460 A NL9000460 A NL 9000460A
- Authority
- NL
- Netherlands
- Prior art keywords
- refractory metal
- forming
- layer
- metal layer
- polysilicon layer
- Prior art date
Links
- 230000006698 induction Effects 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 230000003068 static effect Effects 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 11
- 239000003870 refractory metal Substances 0.000 claims description 68
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 55
- 229920005591 polysilicon Polymers 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 39
- 229910021332 silicide Inorganic materials 0.000 claims description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 description 92
- 239000012535 impurity Substances 0.000 description 22
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4529289 | 1989-02-28 | ||
| JP4529389 | 1989-02-28 | ||
| JP1045293A JPH0821715B2 (ja) | 1989-02-28 | 1989-02-28 | 切り込み型絶縁ゲート静電誘導トランジスタ及びその製造方法 |
| JP4529289A JPH02226772A (ja) | 1989-02-28 | 1989-02-28 | 切り込み型絶縁ゲート静電誘導トランジスタ及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL9000460A true NL9000460A (nl) | 1990-09-17 |
Family
ID=26385266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9000460A NL9000460A (nl) | 1989-02-28 | 1990-02-27 | Statische inductietransistor met geisoleerde poort van het trapsnedetype en werkwijze voor het vervaardigen daarvan. |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5060029A (de) |
| DE (1) | DE4006299C2 (de) |
| NL (1) | NL9000460A (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03187272A (ja) * | 1989-12-15 | 1991-08-15 | Mitsubishi Electric Corp | Ｍｏｓ型電界効果トランジスタ及びその製造方法 |
| DE69125210T2 (de) * | 1990-05-31 | 1997-08-07 | Canon Kk | Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Verdrahtungsstruktur hoher Dichte |
| US5087581A (en) * | 1990-10-31 | 1992-02-11 | Texas Instruments Incorporated | Method of forming vertical FET device with low gate to source overlap capacitance |
| US5475242A (en) * | 1991-09-24 | 1995-12-12 | Small Power Communication Systems Research Laboratories Co., Ltd. | Notched insulation gate static induction transistor integrated circuit |
| JPH0831532B2 (ja) * | 1991-09-24 | 1996-03-27 | 株式会社小電力高速通信研究所 | 切り込み型絶縁ゲート静電誘導トランジスタ集積回路 |
| US5216282A (en) * | 1991-10-29 | 1993-06-01 | International Business Machines Corporation | Self-aligned contact studs for semiconductor structures |
| US5834827A (en) * | 1994-06-15 | 1998-11-10 | Seiko Epson Corporation | Thin film semiconductor device, fabrication method thereof, electronic device and its fabrication method |
| US5600153A (en) * | 1994-10-07 | 1997-02-04 | Micron Technology, Inc. | Conductive polysilicon lines and thin film transistors |
| US5804838A (en) * | 1995-05-26 | 1998-09-08 | Micron Technology, Inc. | Thin film transistors |
| JPH098290A (ja) * | 1995-06-20 | 1997-01-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6204521B1 (en) | 1998-08-28 | 2001-03-20 | Micron Technology, Inc. | Thin film transistors |
| US6977406B2 (en) * | 2001-04-27 | 2005-12-20 | National Institute Of Information And Communications Technology, Incorporated Administrative Agency | Short channel insulated-gate static induction transistor and method of manufacturing the same |
| US9502407B1 (en) * | 2015-12-16 | 2016-11-22 | International Business Machines Corporation | Integrating a planar field effect transistor (FET) with a vertical FET |
| CN116631716A (zh) * | 2023-07-18 | 2023-08-22 | 合肥矽迈微电子科技有限公司 | 一种可变电阻器件的制作方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2801085A1 (de) * | 1977-01-11 | 1978-07-13 | Zaidan Hojin Handotai Kenkyu | Statischer induktionstransistor |
| JPS5598871A (en) * | 1979-01-22 | 1980-07-28 | Semiconductor Res Found | Static induction transistor |
| US4392150A (en) * | 1980-10-27 | 1983-07-05 | National Semiconductor Corporation | MOS Integrated circuit having refractory metal or metal silicide interconnect layer |
| DE3211761A1 (de) * | 1982-03-30 | 1983-10-06 | Siemens Ag | Verfahren zum herstellen von integrierten mos-feldeffekttransistorschaltungen in siliziumgate-technologie mit silizid beschichteten diffusionsgebieten als niederohmige leiterbahnen |
| US4566172A (en) * | 1984-02-24 | 1986-01-28 | Gte Laboratories Incorporated | Method of fabricating a static induction type recessed junction field effect transistor |
| JPS6126261A (ja) * | 1984-07-16 | 1986-02-05 | Nippon Telegr & Teleph Corp <Ntt> | 縦形ｍｏｓ電界効果トランジスタの製造方法 |
| JPS61150366A (ja) * | 1984-12-25 | 1986-07-09 | Nec Corp | Ｍｉｓ型メモリ−セル |
| JPS61206243A (ja) * | 1985-03-08 | 1986-09-12 | Mitsubishi Electric Corp | 高融点金属電極・配線膜を用いた半導体装置 |
| JPS61207054A (ja) * | 1985-03-11 | 1986-09-13 | Nec Corp | Ｍｉｓ型半導体記憶装置 |
| JPS6489470A (en) * | 1987-09-30 | 1989-04-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1990
- 1990-02-23 US US07/483,740 patent/US5060029A/en not_active Expired - Lifetime
- 1990-02-27 NL NL9000460A patent/NL9000460A/nl not_active Application Discontinuation
- 1990-02-28 DE DE4006299A patent/DE4006299C2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE4006299A1 (de) | 1990-08-30 |
| US5060029A (en) | 1991-10-22 |
| DE4006299C2 (de) | 1998-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BV | The patent application has lapsed |