NL9000254A - Een halfgeleiderlaserinrichting en werkwijze voor vervaardiging daarvan. - Google Patents
Een halfgeleiderlaserinrichting en werkwijze voor vervaardiging daarvan. Download PDFInfo
- Publication number
- NL9000254A NL9000254A NL9000254A NL9000254A NL9000254A NL 9000254 A NL9000254 A NL 9000254A NL 9000254 A NL9000254 A NL 9000254A NL 9000254 A NL9000254 A NL 9000254A NL 9000254 A NL9000254 A NL 9000254A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- type
- type gaas
- jacket
- current blocking
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 60
- 230000000903 blocking effect Effects 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2445389 | 1989-02-01 | ||
| JP1024453A JPH02203586A (ja) | 1989-02-01 | 1989-02-01 | 半導体レーザ装置とその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL9000254A true NL9000254A (nl) | 1990-09-03 |
Family
ID=12138580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9000254A NL9000254A (nl) | 1989-02-01 | 1990-02-01 | Een halfgeleiderlaserinrichting en werkwijze voor vervaardiging daarvan. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5020067A (ja) |
| JP (1) | JPH02203586A (ja) |
| DE (1) | DE4002970A1 (ja) |
| NL (1) | NL9000254A (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950004667A (ko) * | 1993-07-29 | 1995-02-18 | 가나이 쯔또무 | 반도체레이저소자 및 그 제작방법 |
| JP4011640B2 (ja) * | 1995-03-02 | 2007-11-21 | 三菱電機株式会社 | 半導体レーザ，及び半導体レーザの製造方法 |
| JPH09139550A (ja) * | 1995-11-16 | 1997-05-27 | Mitsubishi Electric Corp | 半導体レーザ装置の製造方法、及び半導体レーザ装置 |
| EP0828324B1 (en) * | 1996-09-06 | 2003-06-25 | Sanyo Electric Co. Ltd | Semiconductor laser device |
| KR100275532B1 (ko) * | 1998-09-21 | 2001-01-15 | 이계철 | 자동정렬 이온주입 공정을 이용한 고출력 반도체 레이저 제조방법 |
| US6876006B1 (en) | 1999-04-27 | 2005-04-05 | Schlumberger Technology Corporation | Radiation source |
| JP3676965B2 (ja) * | 1999-08-31 | 2005-07-27 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
| JP4309636B2 (ja) * | 2002-10-17 | 2009-08-05 | 三菱電機株式会社 | 半導体レーザおよび光通信用素子 |
| JP4601904B2 (ja) * | 2003-01-30 | 2010-12-22 | 三菱電機株式会社 | 半導体レーザ装置 |
| KR20050001605A (ko) * | 2003-06-26 | 2005-01-07 | 삼성전기주식회사 | 반도체 레이저 소자 및 그 제조방법 |
| JP5485905B2 (ja) * | 2008-10-31 | 2014-05-07 | オプトエナジー株式会社 | 半導体レーザ素子 |
| JP6020190B2 (ja) | 2013-01-21 | 2016-11-02 | セイコーエプソン株式会社 | 発光装置、スーパールミネッセントダイオード、およびプロジェクター |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3855546A (en) * | 1973-09-21 | 1974-12-17 | Texas Instruments Inc | Folded lobe large optical cavity laser diode |
| US4371966A (en) * | 1980-11-06 | 1983-02-01 | Xerox Corporation | Heterostructure lasers with combination active strip and passive waveguide strip |
| JPS60101989A (ja) * | 1983-11-08 | 1985-06-06 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ及びその製造方法 |
| JPH0648743B2 (ja) * | 1987-02-18 | 1994-06-22 | 三菱電機株式会社 | 半導体レ−ザ装置の製造方法 |
| JPH01235397A (ja) * | 1988-03-16 | 1989-09-20 | Mitsubishi Electric Corp | 半導体レーザ |
| GB2222307B (en) * | 1988-07-22 | 1992-04-01 | Mitsubishi Electric Corp | Semiconductor laser |
| US4961197A (en) * | 1988-09-07 | 1990-10-02 | Hitachi, Ltd. | Semiconductor laser device |
-
1989
- 1989-02-01 JP JP1024453A patent/JPH02203586A/ja active Pending
-
1990
- 1990-01-30 US US07/472,285 patent/US5020067A/en not_active Expired - Fee Related
- 1990-02-01 NL NL9000254A patent/NL9000254A/nl not_active Application Discontinuation
- 1990-02-01 DE DE4002970A patent/DE4002970A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02203586A (ja) | 1990-08-13 |
| US5020067A (en) | 1991-05-28 |
| DE4002970A1 (de) | 1990-08-02 |
| DE4002970C2 (ja) | 1992-08-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |