NL8801631A - Werkwijze voor het vervaardigen van een optoelektronische inrichting. - Google Patents
Werkwijze voor het vervaardigen van een optoelektronische inrichting. Download PDFInfo
- Publication number
- NL8801631A NL8801631A NL8801631A NL8801631A NL8801631A NL 8801631 A NL8801631 A NL 8801631A NL 8801631 A NL8801631 A NL 8801631A NL 8801631 A NL8801631 A NL 8801631A NL 8801631 A NL8801631 A NL 8801631A
- Authority
- NL
- Netherlands
- Prior art keywords
- zinc
- layer
- semiconductor body
- type
- indium phosphide
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 230000003287 optical effect Effects 0.000 title 1
- 239000011701 zinc Substances 0.000 claims description 40
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 39
- 229910052725 zinc Inorganic materials 0.000 claims description 39
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000011282 treatment Methods 0.000 claims description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 12
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical group [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 11
- 230000005693 optoelectronics Effects 0.000 claims description 10
- 239000002800 charge carrier Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 48
- 239000000370 acceptor Substances 0.000 description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006011 Zinc phosphide Substances 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229940048462 zinc phosphide Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8801631A NL8801631A (nl) | 1988-06-27 | 1988-06-27 | Werkwijze voor het vervaardigen van een optoelektronische inrichting. |
| DE68915491T DE68915491T2 (de) | 1988-06-27 | 1989-06-21 | Verfahren zur Herstellung einer optoelektronischen Anordnung. |
| EP89201627A EP0357095B1 (en) | 1988-06-27 | 1989-06-21 | Method of manufacturing an optoelectronic device |
| JP16281289A JP2697904B2 (ja) | 1988-06-27 | 1989-06-27 | 光電デバイスの製造方法 |
| US07/770,731 US5506186A (en) | 1988-06-27 | 1991-09-30 | Method of manufacturing an optoelectronic device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8801631A NL8801631A (nl) | 1988-06-27 | 1988-06-27 | Werkwijze voor het vervaardigen van een optoelektronische inrichting. |
| NL8801631 | 1988-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8801631A true NL8801631A (nl) | 1990-01-16 |
Family
ID=19852532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8801631A NL8801631A (nl) | 1988-06-27 | 1988-06-27 | Werkwijze voor het vervaardigen van een optoelektronische inrichting. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5506186A (ja) |
| EP (1) | EP0357095B1 (ja) |
| JP (1) | JP2697904B2 (ja) |
| DE (1) | DE68915491T2 (ja) |
| NL (1) | NL8801631A (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3181262B2 (ja) * | 1998-06-04 | 2001-07-03 | スタンレー電気株式会社 | 平面実装型ｌｅｄ素子およびその製造方法 |
| JP4941625B2 (ja) * | 2005-02-28 | 2012-05-30 | 住友電気工業株式会社 | フォトダイオードの作製方法 |
| KR100858617B1 (ko) * | 2007-05-10 | 2008-09-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE137169C (ja) * | ||||
| US3984267A (en) * | 1974-07-26 | 1976-10-05 | Monsanto Company | Process and apparatus for diffusion of semiconductor materials |
| JPS5472669A (en) * | 1977-11-22 | 1979-06-11 | Mitsubishi Electric Corp | Impurity diffusing method of closing tube type |
| NL7811683A (nl) * | 1978-11-29 | 1980-06-02 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderin- richting en halfgeleiderinrichting vervaardigd volgens deze werkwijze. |
| JPS5637623A (en) * | 1979-09-04 | 1981-04-11 | Matsushita Electric Ind Co Ltd | Method for impurity diffusion |
| JPS5642335A (en) * | 1979-09-14 | 1981-04-20 | Fujitsu Ltd | Zinc diffusion to 3-5 group compound semiconductor |
| JPS58107689A (ja) * | 1981-12-21 | 1983-06-27 | Nec Corp | ＩｎＰへの不純物拡散方法 |
| JPS6053018A (ja) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | 化合物半導体への不純物拡散方法 |
| US4502898A (en) * | 1983-12-21 | 1985-03-05 | At&T Bell Laboratories | Diffusion procedure for semiconductor compound |
| JPS6199327A (ja) * | 1984-10-05 | 1986-05-17 | Fujitsu Ltd | ＩｎＰ系の化合物半導体へのＺｎ拡散方法 |
| JPS61136225A (ja) * | 1984-12-07 | 1986-06-24 | Nec Corp | ＩｎＰへの不純物拡散方法 |
| US4592793A (en) * | 1985-03-15 | 1986-06-03 | International Business Machines Corporation | Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates |
| JPS622530A (ja) * | 1985-06-27 | 1987-01-08 | Mitsubishi Electric Corp | 半導体基板への不純物熱拡散方法 |
| US4662063A (en) * | 1986-01-28 | 1987-05-05 | The United States Of America As Represented By The Department Of The Navy | Generation of ohmic contacts on indium phosphide |
-
1988
- 1988-06-27 NL NL8801631A patent/NL8801631A/nl not_active Application Discontinuation
-
1989
- 1989-06-21 EP EP89201627A patent/EP0357095B1/en not_active Expired - Lifetime
- 1989-06-21 DE DE68915491T patent/DE68915491T2/de not_active Expired - Fee Related
- 1989-06-27 JP JP16281289A patent/JP2697904B2/ja not_active Expired - Lifetime
-
1991
- 1991-09-30 US US07/770,731 patent/US5506186A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE68915491D1 (de) | 1994-06-30 |
| JP2697904B2 (ja) | 1998-01-19 |
| EP0357095B1 (en) | 1994-05-25 |
| DE68915491T2 (de) | 1994-12-22 |
| US5506186A (en) | 1996-04-09 |
| EP0357095A1 (en) | 1990-03-07 |
| JPH0272680A (ja) | 1990-03-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |