NL8700640A - Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. - Google Patents
Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. Download PDFInfo
- Publication number
- NL8700640A NL8700640A NL8700640A NL8700640A NL8700640A NL 8700640 A NL8700640 A NL 8700640A NL 8700640 A NL8700640 A NL 8700640A NL 8700640 A NL8700640 A NL 8700640A NL 8700640 A NL8700640 A NL 8700640A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- silicon
- region
- zone
- conductivity type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 73
- 239000010703 silicon Substances 0.000 claims description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 72
- 230000003064 anti-oxidating effect Effects 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 125
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 210000003323 beak Anatomy 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8700640A NL8700640A (nl) | 1987-03-18 | 1987-03-18 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| US07/163,428 US4894702A (en) | 1987-03-18 | 1988-03-03 | High efficiency, small geometry semiconductor devices |
| DE3886606T DE3886606T2 (de) | 1987-03-18 | 1988-03-09 | Halbleiteranordnung mit lateraler Kontaktstruktur und Verfahren zu deren Herstellung. |
| EP88200451A EP0300514B1 (en) | 1987-03-18 | 1988-03-09 | Semiconductor device with a sidelong contact structure, and its manufacture |
| KR1019880002694A KR880011935A (ko) | 1987-03-18 | 1988-03-15 | 반도체 장치 및 제조 방법 |
| JP63059541A JP2597631B2 (ja) | 1987-03-18 | 1988-03-15 | 半導体デバイスおよびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8700640 | 1987-03-18 | ||
| NL8700640A NL8700640A (nl) | 1987-03-18 | 1987-03-18 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8700640A true NL8700640A (nl) | 1988-10-17 |
Family
ID=19849726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8700640A NL8700640A (nl) | 1987-03-18 | 1987-03-18 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4894702A (ja) |
| EP (1) | EP0300514B1 (ja) |
| JP (1) | JP2597631B2 (ja) |
| KR (1) | KR880011935A (ja) |
| DE (1) | DE3886606T2 (ja) |
| NL (1) | NL8700640A (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2536616B2 (ja) * | 1989-03-15 | 1996-09-18 | 日本電気株式会社 | 半導体装置 |
| EP0391483B1 (en) * | 1989-04-05 | 1997-12-10 | Koninklijke Philips Electronics N.V. | Semiconductor device having a collector region, a base region and an emitter region, and method of manufacturing the same |
| GB2230134A (en) * | 1989-04-05 | 1990-10-10 | Philips Nv | A method of manufacturing a semiconductor device |
| KR0140979B1 (ko) * | 1989-10-20 | 1998-07-15 | 고스기 노부미쓰 | 반도체 집적회로 장치의 제조방법 |
| JP2008538864A (ja) * | 2005-04-28 | 2008-11-06 | エヌエックスピー ビー ヴィ | バイポーラトランジスタ及びその製造方法 |
| DE102007029756A1 (de) * | 2007-06-27 | 2009-01-02 | X-Fab Semiconductor Foundries Ag | Halbleiterstruktur zur Herstellung eines Trägerwaferkontaktes in grabenisolierten SOI-Scheiben |
| US9000527B2 (en) | 2012-05-15 | 2015-04-07 | Apple Inc. | Gate stack with electrical shunt in end portion of gate stack |
| US8912584B2 (en) | 2012-10-23 | 2014-12-16 | Apple Inc. | PFET polysilicon layer with N-type end cap for electrical shunt |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1129118A (en) * | 1978-07-19 | 1982-08-03 | Tetsushi Sakai | Semiconductor devices and method of manufacturing the same |
| DE2946963A1 (de) * | 1979-11-21 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Schnelle bipolare transistoren |
| US4338138A (en) * | 1980-03-03 | 1982-07-06 | International Business Machines Corporation | Process for fabricating a bipolar transistor |
| NL8202686A (nl) * | 1982-07-05 | 1984-02-01 | Philips Nv | Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze. |
| JPH0618198B2 (ja) * | 1984-02-15 | 1994-03-09 | 株式会社日立製作所 | 半導体装置 |
| JPS61166071A (ja) * | 1985-01-17 | 1986-07-26 | Toshiba Corp | 半導体装置及びその製造方法 |
| US4571817A (en) * | 1985-03-15 | 1986-02-25 | Motorola, Inc. | Method of making closely spaced contacts to PN-junction using stacked polysilicon layers, differential etching and ion implantations |
| JPS6221270A (ja) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US4792837A (en) * | 1986-02-26 | 1988-12-20 | Ge Solid State Patents, Inc. | Orthogonal bipolar transistor |
| EP0246682A1 (en) * | 1986-04-23 | 1987-11-25 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device comprising an electrode made of polycrystalline silicon |
-
1987
- 1987-03-18 NL NL8700640A patent/NL8700640A/nl not_active Application Discontinuation
-
1988
- 1988-03-03 US US07/163,428 patent/US4894702A/en not_active Expired - Lifetime
- 1988-03-09 EP EP88200451A patent/EP0300514B1/en not_active Expired - Lifetime
- 1988-03-09 DE DE3886606T patent/DE3886606T2/de not_active Expired - Fee Related
- 1988-03-15 KR KR1019880002694A patent/KR880011935A/ko active IP Right Grant
- 1988-03-15 JP JP63059541A patent/JP2597631B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0300514B1 (en) | 1993-12-29 |
| JPS63244775A (ja) | 1988-10-12 |
| KR880011935A (ko) | 1988-10-31 |
| JP2597631B2 (ja) | 1997-04-09 |
| EP0300514A1 (en) | 1989-01-25 |
| DE3886606D1 (de) | 1994-02-10 |
| DE3886606T2 (de) | 1994-06-30 |
| US4894702A (en) | 1990-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |