NL8601939A - Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat. - Google Patents
Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat. Download PDFInfo
- Publication number
- NL8601939A NL8601939A NL8601939A NL8601939A NL8601939A NL 8601939 A NL8601939 A NL 8601939A NL 8601939 A NL8601939 A NL 8601939A NL 8601939 A NL8601939 A NL 8601939A NL 8601939 A NL8601939 A NL 8601939A
- Authority
- NL
- Netherlands
- Prior art keywords
- substrate
- liquid
- particles
- interface
- particle
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims description 131
- 239000000758 substrate Substances 0.000 title claims description 108
- 238000000034 method Methods 0.000 title claims description 35
- 239000007788 liquid Substances 0.000 claims description 86
- 239000004094 surface-active agent Substances 0.000 claims description 8
- -1 alkyl lithium Chemical compound 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 150000004756 silanes Chemical class 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000009736 wetting Methods 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PJDOLCGOTSNFJM-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctan-1-ol Chemical compound OCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F PJDOLCGOTSNFJM-UHFFFAOYSA-N 0.000 description 1
- 241000341495 Fornax Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052595 hematite Inorganic materials 0.000 description 1
- 239000011019 hematite Substances 0.000 description 1
- BXWNKGSJHAJOGX-UHFFFAOYSA-N hexadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCO BXWNKGSJHAJOGX-UHFFFAOYSA-N 0.000 description 1
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8601939A NL8601939A (nl) | 1986-07-28 | 1986-07-28 | Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat. |
EP87201332A EP0255167B1 (en) | 1986-07-28 | 1987-07-14 | Method of removing undesired particles from a surface of a substrate |
DE87201332T DE3787595T2 (de) | 1986-07-28 | 1987-07-14 | Verfahren zum Entfernen von unerwünschten Teilchen von der Oberfläche eines Substrats. |
US07/076,101 US4781764A (en) | 1986-07-28 | 1987-07-21 | Method of removing undesired particles from a surface of a substrate |
KR1019870008113A KR960013142B1 (ko) | 1986-07-28 | 1987-07-25 | 기판 표면의 바람직하지 않은 입자 제거 방법 |
JP62185627A JP2517607B2 (ja) | 1986-07-28 | 1987-07-27 | 基板表面から粒子を除去する方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8601939A NL8601939A (nl) | 1986-07-28 | 1986-07-28 | Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat. |
NL8601939 | 1986-07-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8601939A true NL8601939A (nl) | 1988-02-16 |
Family
ID=19848356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8601939A NL8601939A (nl) | 1986-07-28 | 1986-07-28 | Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4781764A (ko) |
EP (1) | EP0255167B1 (ko) |
JP (1) | JP2517607B2 (ko) |
KR (1) | KR960013142B1 (ko) |
DE (1) | DE3787595T2 (ko) |
NL (1) | NL8601939A (ko) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4962776A (en) * | 1987-03-26 | 1990-10-16 | Regents Of The University Of Minnesota | Process for surface and fluid cleaning |
US4964919A (en) * | 1988-12-27 | 1990-10-23 | Nalco Chemical Company | Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound |
NL8900480A (nl) * | 1989-02-27 | 1990-09-17 | Philips Nv | Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof. |
JPH047071A (ja) * | 1990-04-24 | 1992-01-10 | Ebara Res Co Ltd | 洗浄方法 |
WO1993006949A1 (en) | 1991-10-04 | 1993-04-15 | Cfm Technologies, Inc. | Ultracleaning of involuted microparts |
JP2777498B2 (ja) * | 1991-12-06 | 1998-07-16 | 三菱電機株式会社 | 基板の洗浄方法 |
US5660642A (en) * | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
US6045624A (en) * | 1996-09-27 | 2000-04-04 | Tokyo Electron Limited | Apparatus for and method of cleaning objects to be processed |
US20040007255A1 (en) * | 1997-06-20 | 2004-01-15 | Labib Mohamed Emam | Apparatus and method for cleaning pipelines, tubing and membranes using two-phase flow |
KR100452542B1 (ko) | 1998-04-14 | 2004-10-12 | 가부시끼가이샤가이죠 | 세정물 건조장치 및 건조방법 |
US6090217A (en) | 1998-12-09 | 2000-07-18 | Kittle; Paul A. | Surface treatment of semiconductor substrates |
US6589361B2 (en) | 2000-06-16 | 2003-07-08 | Applied Materials Inc. | Configurable single substrate wet-dry integrated cluster cleaner |
US6899111B2 (en) * | 2001-06-15 | 2005-05-31 | Applied Materials, Inc. | Configurable single substrate wet-dry integrated cluster cleaner |
US6398875B1 (en) | 2001-06-27 | 2002-06-04 | International Business Machines Corporation | Process of drying semiconductor wafers using liquid or supercritical carbon dioxide |
US20030171239A1 (en) * | 2002-01-28 | 2003-09-11 | Patel Bakul P. | Methods and compositions for chemically treating a substrate using foam technology |
US20040031167A1 (en) | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US7737097B2 (en) | 2003-06-27 | 2010-06-15 | Lam Research Corporation | Method for removing contamination from a substrate and for making a cleaning solution |
US7648584B2 (en) * | 2003-06-27 | 2010-01-19 | Lam Research Corporation | Method and apparatus for removing contamination from substrate |
US8316866B2 (en) | 2003-06-27 | 2012-11-27 | Lam Research Corporation | Method and apparatus for cleaning a semiconductor substrate |
US7913703B1 (en) | 2003-06-27 | 2011-03-29 | Lam Research Corporation | Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate |
US7799141B2 (en) | 2003-06-27 | 2010-09-21 | Lam Research Corporation | Method and system for using a two-phases substrate cleaning compound |
US8522801B2 (en) | 2003-06-27 | 2013-09-03 | Lam Research Corporation | Method and apparatus for cleaning a semiconductor substrate |
US8323420B2 (en) | 2005-06-30 | 2012-12-04 | Lam Research Corporation | Method for removing material from semiconductor wafer and apparatus for performing the same |
US8043441B2 (en) | 2005-06-15 | 2011-10-25 | Lam Research Corporation | Method and apparatus for cleaning a substrate using non-Newtonian fluids |
US7416370B2 (en) | 2005-06-15 | 2008-08-26 | Lam Research Corporation | Method and apparatus for transporting a substrate using non-Newtonian fluid |
US7862662B2 (en) | 2005-12-30 | 2011-01-04 | Lam Research Corporation | Method and material for cleaning a substrate |
US7568490B2 (en) | 2003-12-23 | 2009-08-04 | Lam Research Corporation | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
US8522799B2 (en) | 2005-12-30 | 2013-09-03 | Lam Research Corporation | Apparatus and system for cleaning a substrate |
US8070884B2 (en) * | 2005-04-01 | 2011-12-06 | Fsi International, Inc. | Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance |
SG154438A1 (en) | 2005-12-30 | 2009-08-28 | Lam Res Corp | Cleaning compound and method and system for using the cleaning compound |
US7897213B2 (en) | 2007-02-08 | 2011-03-01 | Lam Research Corporation | Methods for contained chemical surface treatment |
US8084406B2 (en) | 2007-12-14 | 2011-12-27 | Lam Research Corporation | Apparatus for particle removal by single-phase and two-phase media |
US8114221B2 (en) * | 2008-09-30 | 2012-02-14 | Princeton Trade & Technology, Inc. | Method and composition for cleaning tubular systems employing moving three-phase contact lines |
US8226774B2 (en) * | 2008-09-30 | 2012-07-24 | Princeton Trade & Technology, Inc. | Method for cleaning passageways such an endoscope channels using flow of liquid and gas |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1497779A1 (de) * | 1966-04-27 | 1969-10-02 | Helmut Schneider | Verfahren und Vorrichtung zur Erzeugung von Schall- oder Ultraschallwellen an Oberflaechen |
SU380754A1 (ru) * | 1969-04-08 | 1973-05-15 | Способ химического обезжиривания металлических поверхностей | |
US3664871A (en) * | 1970-03-30 | 1972-05-23 | Atlantic Richfield Co | Coating removal method |
JPS52125582A (en) * | 1975-03-12 | 1977-10-21 | Mitsui Mining & Smelting Co | Method of peeling other substance from plastics |
US4186032A (en) * | 1976-09-23 | 1980-01-29 | Rca Corp. | Method for cleaning and drying semiconductors |
US4118649A (en) * | 1977-05-25 | 1978-10-03 | Rca Corporation | Transducer assembly for megasonic cleaning |
US4178188A (en) * | 1977-09-14 | 1979-12-11 | Branson Ultrasonics Corporation | Method for cleaning workpieces by ultrasonic energy |
US4169807A (en) * | 1978-03-20 | 1979-10-02 | Rca Corporation | Novel solvent drying agent |
JPS5527032A (en) * | 1978-08-14 | 1980-02-26 | Fujitsu Ltd | Washing method by distilled liquid |
US4238244A (en) * | 1978-10-10 | 1980-12-09 | Halliburton Company | Method of removing deposits from surfaces with a gas agitated cleaning liquid |
US4375992A (en) * | 1980-12-24 | 1983-03-08 | Rca Corporation | Apparatus and method for cleaning recorded discs |
JPS58132934A (ja) * | 1982-02-03 | 1983-08-08 | Nec Corp | 半導体ウエハ−の水洗方法 |
JPS60223130A (ja) * | 1984-04-19 | 1985-11-07 | Sharp Corp | 基板の洗滌乾燥方法及びその装置 |
JPS6115334A (ja) * | 1984-07-02 | 1986-01-23 | Tasu Gijutsu Kenkyusho:Kk | 超音波洗浄方法 |
JPS6160799A (ja) * | 1984-08-31 | 1986-03-28 | 株式会社東芝 | 洗浄液 |
JPS6187338A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 多重ビ−ム照射Si表面ドライ洗浄法 |
JPS61228629A (ja) * | 1985-04-02 | 1986-10-11 | Mitsubishi Electric Corp | ウエハ等薄板体の表面処理装置 |
ATE74294T1 (de) * | 1985-06-24 | 1992-04-15 | Cfm Technologies Inc | Behandlung von halbleiterscheiben mit einer fluessigkeitsstroemung. |
-
1986
- 1986-07-28 NL NL8601939A patent/NL8601939A/nl not_active Application Discontinuation
-
1987
- 1987-07-14 DE DE87201332T patent/DE3787595T2/de not_active Expired - Fee Related
- 1987-07-14 EP EP87201332A patent/EP0255167B1/en not_active Expired - Lifetime
- 1987-07-21 US US07/076,101 patent/US4781764A/en not_active Expired - Lifetime
- 1987-07-25 KR KR1019870008113A patent/KR960013142B1/ko not_active IP Right Cessation
- 1987-07-27 JP JP62185627A patent/JP2517607B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3787595T2 (de) | 1994-03-24 |
DE3787595D1 (de) | 1993-11-04 |
KR960013142B1 (ko) | 1996-09-30 |
EP0255167B1 (en) | 1993-09-29 |
KR880002246A (ko) | 1988-04-29 |
JPS6336535A (ja) | 1988-02-17 |
EP0255167A2 (en) | 1988-02-03 |
US4781764A (en) | 1988-11-01 |
EP0255167A3 (en) | 1989-06-28 |
JP2517607B2 (ja) | 1996-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |