KR880002246A - 기판면의 바람직하지 않은 입자 제거방법 - Google Patents

기판면의 바람직하지 않은 입자 제거방법 Download PDF

Info

Publication number
KR880002246A
KR880002246A KR1019870008113A KR870008113A KR880002246A KR 880002246 A KR880002246 A KR 880002246A KR 1019870008113 A KR1019870008113 A KR 1019870008113A KR 870008113 A KR870008113 A KR 870008113A KR 880002246 A KR880002246 A KR 880002246A
Authority
KR
South Korea
Prior art keywords
substrate
liquid
substrate surface
particle removal
moved over
Prior art date
Application number
KR1019870008113A
Other languages
English (en)
Other versions
KR960013142B1 (ko
Inventor
프란시스커스 마리아 네라르스 아드리안
Original Assignee
이반 밀러 레르너
엔.브이.필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이반 밀러 레르너, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 이반 밀러 레르너
Publication of KR880002246A publication Critical patent/KR880002246A/ko
Application granted granted Critical
Publication of KR960013142B1 publication Critical patent/KR960013142B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

내용 없음

Description

기판면의 바람직하지 않은 입자 제거방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 입자가 존재하는 표면을 갖고 있는 기판을 개략 도시한 도면
제2도는 평형상태에 있는 액체의 공유영역에 부착된 입자를 개략 도시한 도면
제3도는 액체속으로 이동되는 입자가 존재하는 표면을 갖는 기판을 개략 도시한 도면

Claims (8)

  1. 액체에 의해 제거력이 입자에 가해지게 하므로써 기판면에서 바람직하지 않은 입자를 제거하는 방법에 있어서, 제거력은 액체의 공유영역을 기판의 표면위로 이동시키므로써 가해지는 것을 특징으로 하는 기판면의 바람직하지 않은 입자 제거방법.
  2. 제1항에 있어서, 액체의 공유영역은 기껏해야 10㎝/sec의 속도로 기판면 위로 이동되는 것을 특징으로하는 기판면의 바람직하지 않은 입자 제거방법.
  3. 제1 또는 2항에 있어서, 액체의 공유영역은 기판을 액체속으로 이동시킴으로써 기판면 위로 이동되는 액체의 표면에 의해 형성되는 것을 특징으로하는 기판면의 바람직하지 않은 입자 제거방법.
  4. 제1 또는 2항에 있어서, 액체의 공유영역은 기판을 액체밖으로 이동시킴으로써 기판면 위로 이동되는 액체의 표면에 의해 형성되는 것을 특징으로하는 기판면의 바람직하지 않은 입자 제거방법.
  5. 제1 또는 2항에 있어서, 액체의 공유영역은 액체속에 잠겨있는 기판면 위로 이동되는 가스 기포와 액체의 위상 경계에 의해 형성되는 것을 특징으로하는 기판면의 바람직하지 않은 입자 제거방법.
  6. 제5항에 있어서, 가스 기포는 레이저 방사선의 빔으로 액체속에 잠겨있는 기판을 조사하므로써 형성되며 레이저 방사선의 빔을 상기 기판면 위로 이동시키므로써 기판면 위로 이동되는 증기 기포인 것을 특징으로 하는 기판면의 바람직하지 않은 입자 제거방법.
  7. 제1 내지 6항에 있어서, 기판의 표면과 그곳에 부착된 바람직하지 않은 입자의 표면은 우선 기판-활성물질로 처리되고, 그 결과로 기판의 표면과 입자의 표면은 덜 만족스럽게 습식되는 것을 특징으로 하는 기판면의 바람직하지 않은 입자 제거방법.
  8. 제1 내지 6항에 있어서, 기판의 표면과 그곳에 부착된 바람직하지 않은 입자들은 실란, 알코올 및 알킬리듐을 포함하는 합성물의 그룹에서 선택된 표면-활성 물질에 의해 먼저 처리되는 것을 특징으로 하는 기판면의 바람직하지 않은 입자제거 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870008113A 1986-07-28 1987-07-25 기판 표면의 바람직하지 않은 입자 제거 방법 KR960013142B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8601939 1986-07-28
NL8601939A NL8601939A (nl) 1986-07-28 1986-07-28 Werkwijze voor het verwijderen van ongewenste deeltjes van een oppervlak van een substraat.

Publications (2)

Publication Number Publication Date
KR880002246A true KR880002246A (ko) 1988-04-29
KR960013142B1 KR960013142B1 (ko) 1996-09-30

Family

ID=19848356

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008113A KR960013142B1 (ko) 1986-07-28 1987-07-25 기판 표면의 바람직하지 않은 입자 제거 방법

Country Status (6)

Country Link
US (1) US4781764A (ko)
EP (1) EP0255167B1 (ko)
JP (1) JP2517607B2 (ko)
KR (1) KR960013142B1 (ko)
DE (1) DE3787595T2 (ko)
NL (1) NL8601939A (ko)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962776A (en) * 1987-03-26 1990-10-16 Regents Of The University Of Minnesota Process for surface and fluid cleaning
US4964919A (en) * 1988-12-27 1990-10-23 Nalco Chemical Company Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH047071A (ja) * 1990-04-24 1992-01-10 Ebara Res Co Ltd 洗浄方法
JP3209426B2 (ja) 1991-10-04 2001-09-17 シーエフエムティ インコーポレイテッド 複雑な形状を有するマイクロパーツの洗浄
JP2777498B2 (ja) * 1991-12-06 1998-07-16 三菱電機株式会社 基板の洗浄方法
US5660642A (en) * 1995-05-26 1997-08-26 The Regents Of The University Of California Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
US6045624A (en) * 1996-09-27 2000-04-04 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
US20040007255A1 (en) * 1997-06-20 2004-01-15 Labib Mohamed Emam Apparatus and method for cleaning pipelines, tubing and membranes using two-phase flow
SG81975A1 (en) 1998-04-14 2001-07-24 Kaijo Kk Method and apparatus for drying washed objects
US6090217A (en) 1998-12-09 2000-07-18 Kittle; Paul A. Surface treatment of semiconductor substrates
WO2001099156A1 (en) 2000-06-16 2001-12-27 Applied Materials, Inc. Configurable single substrate wet-dry integrated cluster cleaner
US6899111B2 (en) * 2001-06-15 2005-05-31 Applied Materials, Inc. Configurable single substrate wet-dry integrated cluster cleaner
US6398875B1 (en) 2001-06-27 2002-06-04 International Business Machines Corporation Process of drying semiconductor wafers using liquid or supercritical carbon dioxide
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
US20040031167A1 (en) 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US7737097B2 (en) 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
US8522801B2 (en) 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US7799141B2 (en) 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US8316866B2 (en) 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7568490B2 (en) 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US7416370B2 (en) 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US8522799B2 (en) 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US7862662B2 (en) 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US8043441B2 (en) 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US8070884B2 (en) * 2005-04-01 2011-12-06 Fsi International, Inc. Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas enviroment including a drying enhancement substance
EP2428557A1 (en) 2005-12-30 2012-03-14 LAM Research Corporation Cleaning solution
US7897213B2 (en) 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US8226775B2 (en) 2007-12-14 2012-07-24 Lam Research Corporation Methods for particle removal by single-phase and two-phase media
US8114221B2 (en) * 2008-09-30 2012-02-14 Princeton Trade & Technology, Inc. Method and composition for cleaning tubular systems employing moving three-phase contact lines
US8226774B2 (en) 2008-09-30 2012-07-24 Princeton Trade & Technology, Inc. Method for cleaning passageways such an endoscope channels using flow of liquid and gas

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1497779A1 (de) * 1966-04-27 1969-10-02 Helmut Schneider Verfahren und Vorrichtung zur Erzeugung von Schall- oder Ultraschallwellen an Oberflaechen
SU380754A1 (ru) * 1969-04-08 1973-05-15 Способ химического обезжиривания металлических поверхностей
US3664871A (en) * 1970-03-30 1972-05-23 Atlantic Richfield Co Coating removal method
JPS52125582A (en) * 1975-03-12 1977-10-21 Mitsui Mining & Smelting Co Method of peeling other substance from plastics
US4186032A (en) * 1976-09-23 1980-01-29 Rca Corp. Method for cleaning and drying semiconductors
US4118649A (en) * 1977-05-25 1978-10-03 Rca Corporation Transducer assembly for megasonic cleaning
US4178188A (en) * 1977-09-14 1979-12-11 Branson Ultrasonics Corporation Method for cleaning workpieces by ultrasonic energy
US4169807A (en) * 1978-03-20 1979-10-02 Rca Corporation Novel solvent drying agent
JPS5527032A (en) * 1978-08-14 1980-02-26 Fujitsu Ltd Washing method by distilled liquid
US4238244A (en) * 1978-10-10 1980-12-09 Halliburton Company Method of removing deposits from surfaces with a gas agitated cleaning liquid
US4375992A (en) * 1980-12-24 1983-03-08 Rca Corporation Apparatus and method for cleaning recorded discs
JPS58132934A (ja) * 1982-02-03 1983-08-08 Nec Corp 半導体ウエハ−の水洗方法
JPS60223130A (ja) * 1984-04-19 1985-11-07 Sharp Corp 基板の洗滌乾燥方法及びその装置
JPS6115334A (ja) * 1984-07-02 1986-01-23 Tasu Gijutsu Kenkyusho:Kk 超音波洗浄方法
JPS6160799A (ja) * 1984-08-31 1986-03-28 株式会社東芝 洗浄液
JPS6187338A (ja) * 1984-10-05 1986-05-02 Nec Corp 多重ビ−ム照射Ｓｉ表面ドライ洗浄法
JPS61228629A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp ウエハ等薄板体の表面処理装置
KR890001502B1 (ko) * 1985-06-24 1989-05-06 씨.에프.엠 테크늘러지즈 인코포레이티드 반도체 웨이퍼 흐름 처리공정 및 그 장치

Also Published As

Publication number Publication date
KR960013142B1 (ko) 1996-09-30
EP0255167A3 (en) 1989-06-28
EP0255167B1 (en) 1993-09-29
JP2517607B2 (ja) 1996-07-24
NL8601939A (nl) 1988-02-16
DE3787595T2 (de) 1994-03-24
DE3787595D1 (de) 1993-11-04
US4781764A (en) 1988-11-01
JPS6336535A (ja) 1988-02-17
EP0255167A2 (en) 1988-02-03

Similar Documents

Publication Publication Date Title
KR880002246A (ko) 기판면의 바람직하지 않은 입자 제거방법
KR880002926A (ko) 방수제품 및 방수제품을 만드는 방법
ATE77899T1 (de) Verarmtes halbleiterelement mit einem potential- minimum fuer majoritaetstraeger.
KR830004844A (ko) 피복된 연질 캡슈울과 그의 제조방법
FR2350884A1 (fr) Procede et appareil pour le traitement d'un liquide tel que, par exemple, une boue activee
KR920002830A (ko) 조밀한 고순도 균질 막의 제조방법 및 이의 구성법
GR3015518T3 (en) Method of producing collagen particles, and the use of such particles as substrates for active substances.
NO144002C (no) Anordning for anvendelse ved vaeskestroemsfotometri
KR930001313A (ko) 알루미늄·게르마늄합금막의 게르마늄의 제거방법
KR890700695A (ko) 활성의 금속표면의 제조방법.
ATE30804T1 (de) Verfahren zum dekontaminieren der oberflaeche eines gegenstands.
DE69305990D1 (de) Materiel zum extrahieren von in wasser gelösten hydrophoben substanzen
KR860003165A (ko) 폐수로부터 유기금속의 제거방법
ATE48951T1 (de) Verfahren zur reduktion oder oxidation von reduzierbaren oder oxidierbaren stoffen in waessriger loesung.
ATE128377T1 (de) Trennvorrichtung zur behandlung von flüssigkeiten.
JPS5241654A (en) Formation of roughened coating layer by electro-phoresis and coating c omposition for the same
KR850003326A (ko) 강철 피클링의 폐기액으로부터 규산계 화합물을 제거하는 방법
JPS5510437A (en) Glass plate cutting method
ATE285285T1 (de) Adsorption von hydrophoben gaskomponenten und/oder aerosolen aus einer gasphase
SU647336A1 (ru) Способ деэмульсации нефти
ATE42912T1 (de) Emulgatorkombinationen fuer emulsionen vom typ wasser-in-oel sowie deren verwendung.
ATE78006T1 (de) Einrichtung zur entfernung von glasblaeschen enthaltenden zyanobakterien aus wasser.
JPS5759328A (en) Method for fixed exfoliation of sample
Volker et al. Finite Element Solutions for Unconfined Aquifer Pollution from Surface Recharge
ATE215593T1 (de) Zusammensetzung und verfahren zur behandlung von harten oberflächen

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20040831

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee